Chinese Journal of Semiconductors 2010 Issue 4 A high-speed and high-resolution CMOS comparator with three-stage preamplifier

A high-speed and high-resolution CMOS comparator with three-stage preamplifier
Jiang Li Xu Weisheng Yu Youling

..............page:80-84

A high speed sampler for sub-sampling IR-UWB receiver
Shao Ke Lu Bo Xia Lingli Hong Zhiliang

..............page:72-75

Design and research of an LED driving circuit with accurate proportional current sampling mode
Guo Wei Yang Xing Zhu Dazhong

..............page:94-98

A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems
Salahddine Krit~+;Hassan Qjidaa~+;Imad El Affar;Yafrah Khadija;Ziani Messghati; and Yassir El-Ghzizal Fes;Morocco)

..............page:57-61

A novel charge pump drive circuit for power MOSFETs
Wang Songlin Zhou Bo Ye Qiang Wang Hui Guo Wangrui

..............page:99-103

Low power CMOS preamplifier for neural recording applications
Zhang Xu Pei Weihua Huang Beiju Chen Hongda

..............page:62-67

Mixed-integrator-based bi-quad cell for designing a continuous time filter
Chen Yong Zhou Yumei

..............page:109-112

A novel SOI MOSFET electrostatic field sensor
Chen Xin’an Huang Qing’an

..............page:68-71

A full asynchronous serial transmission converter for network-on-chips
Yang Yintang Guan Xuguang Zhou Duan Zhu Zhangming

..............page:85-93

P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn₃N₂:Ga
Zhang Jun Xue Shuwen Shao Lexi

..............page:5-8

Ti/WSi/Ni ohmic contact to n-type SiCN
Cheng Wenjuan Qian Yann Ma Xueming

..............page:14-16

An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure
Pu Hongbin Cao Lin Ren Jie Chen Zhiming Nan Yagong

..............page:17-19

The microwave large signal load line of an InGaP HBT
Zhao Lixin Jin Zhi Liu Xinyu

..............page:28-31

Properties of the ITO layer in a novel red light-emitting diode
Zhang Yonghui Guo Weiling Gao Wei Li Chunwei Ding Tianping

..............page:9-13

A new SOI high voltage device based on E-SIMOX substrate
Wu Lijuan Hu Shengdong Zhang Bo Li Zhaoji

..............page:46-51

AIGaN/GaN double-channel HEMT
Quan Si Hao Yue Ma Xiaohua Zheng Pengtia Xie Yuanbin

..............page:25-27

Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor
Zhang Yong Yang Jianhong Cai Xueyuan Wang Zaixing

..............page:20-24

Total ionizing dose effects and annealing behavior for domestic VDMOS devices
Gao Bo Yu Xuefeng Ren Diyuan Liu Gang Wang Yiyuan Sun Jing Cui Jiangwei

..............page:41-45

RF CMOS modeling:a novel empirical large-signal model for an RF-MOSFET
Sun Lingling L Binyi Liu Jun Chen Lei

..............page:52-56

A 3-5 GHz CMOS UWB power amplifier with±8 ps group delay ripple
Xi Tianzuo Huang Lu Zheng Zhong Feng Lisong

..............page:76-79

Fast statistical delay evaluation of RC interconnect in the presence of process variations
Li Jianwei Dong Gang Yang Yintang Wang Zeng

..............page:104-108

Design of 20-44 GHz broadband doubler MMIC
Li Qin Wang Zhigong Li Wei

..............page:113-116

Residual impurities and electrical properties of undoped LEC InAs single crystals
Hu Weijie Zhao Youwen Sun Wenrong Duan Manlong Dong Zhiyuan Yang Jun

..............page:1-4

EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy
Xi Xiaowen Chai Changchun Ren Xingrong Yang Yintang Zhang Bing Hong Xiao

..............page:32-36

Low-field mobility and carrier transport mechanism transition in nanoscale MOSFETs
Liu Hongwei Wang Runsheng Huang Ru Zhang Xing

..............page:37-40