Chinese Journal of Semiconductors 2009 Issue 9 Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO<sub>2</sub> substrate

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO₂ substrate
Tian Mi;Xiu Xiangqian;Zhang Rong;Hua Xuemei;Liu Zhanhui;Han Ping;Xie Zili;and Zheng Youdou

..............page:13-15

Fabrication of strained Ge film using a thin SiGe virtual substrate
Guo Lei;Zhao Shuo;Wang Jing;Liu Zhihong;and Xu Jun

..............page:16-20

Formation of stacked ruthenium nanocrystals embedded in SiO₂ for nonvolatile memory applications
Mao Ping;Zhang Zhigang;Pan Liyang;Xu Jun;and Chen Peiyi

..............page:9-12

Security strategy of powered-off SRAM for resisting physical attack to data remanence
Yu Kai;Zou Xuecheng;Yu Guoyi;and Wang Weixu

..............page:102-106

A low cost integrated transceiver for mobile UHF passive RFID reader applications
Wang Jingchao;Zhang Chun;Chi Baoyong;Wang Ziqiang;Li Fule;and Wang Zhihua

..............page:86-90

High-performance electroabsorption modulator
Zhang Wei;Pan Jiaoqing;Zhu Hongliang;Wang Huan;and Wang Wei

..............page:53-56

An X-band GaN combined solid-state power amplifier
Chen Chi;Hao Yue;Feng Hui;Yang Linan;Ma Xiaohua;Duan Huantao;and Hu Shigang

..............page:57-61

Influence of a tilted cavity on quantum-dot optoelectronic active devices
Liu Wanglai;Xu Bo;Liang Ping;Hu Ying;Sun Hong;L Xueqin;and Wang Zhanguo

..............page:37-40

An area-saving and high power efficiency charge pump built in a TFT-LCD driver IC
Zheng Ran;Wei Tingcun;Wang Jia;and Gao Deyuan

..............page:129-134

A time-domain digitally controlled oscillator composed of a free running ring oscillator and flying-adder
Liu Wei1;3;Li Wei2;Ren Peng2;Lin Qinglong2;Zhang Shengdong1;3 and Wang Yangyuan1

..............page:70-74

5-Gb/s 0.18-μm CMOS 2:1 multiplexer with integrated clock extraction
Zhang Changchun1;Wang Zhigong1;Shi Si1;Miao Peng1;and Tian Ling2

..............page:96-101

A 2.8ppm/℃ high PSRR BiCMOS bandgap voltage reference
Ming Xin1;Lu Yang2;Zhang Bo1;and Zhou Zekun1

..............page:124-128

Active layer self-protection process for organic field-effect transistors
Liu Ge;Liu Ming;Shang Liwei;Tu Deyu;Liu Xinghua;Wang Hong;and Liu Jiang

..............page:45-48

A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs
Wang Yi;He Lenian;Ning Zhihua;and Shao Yali

..............page:117-123

A single-inductor dual-output switching converter with average current mode control
Xu Weiwei1;Zhu Xiaoting1;Hong Zhiliang1;and Killat D2

..............page:111-116

Low modulation index RF signal detection for a passive UHF RFID transponder
Liu Zhongqi1;Zhang Chun2;Li Yongming2;and Wang Zhihua2

..............page:75-78

Lithography-independent and large scale fabrication of a metal electrode nanogap
Li Yan;Wang Xiaofeng;Zhang Jiayong;Wang Xiaodong;Fan Zhongchao;and Yang Fuhua

..............page:142-145

A multi-standard active-RC filter with accurate tuning system
Ma Heping1;Yuan Fang1;Shi Yin1;and Dai F F2

..............page:107-110

Influence of body contact of SOI MOSFETs on the thermal conductance of devices
Lu Shuojin;Liu Mengxin;and Han Zhengsheng

..............page:26-28

A dual-band reconfigurable direct-conversion receiver RF front-end
Yao Guoqin;Chi Baoyong;Zhang Chun;and Wang Zhihua

..............page:91-95

Lithography process for KrF in the sub-0.11μm node
Zhao Yuhang1;Zhu Jun2;Tong Jiarong1;and Zeng Xuan1

..............page:146-150

A fast-hopping 3-band CMOS frequency synthesizer for MB-OFDM UWB system
Zheng Yongzheng;Xia Lingli;Li Weinan;Huang Yumei;and Hong Zhiliang

..............page:79-85

Dependence of wet etch rate on deposition,annealing conditions and etchants for PECVD silicon nitride film
Tang Longjuan1;2;Zhu Yinfang1;2;Yang Jinling1;2;Li Yan1;Zhou Wei1;2;Xie Jing1;2;Liu Yunfei1;2;and Yang Fuhua1

..............page:151-154

Analytical models for the base transit time of a bipolar transistor with double base epilayers
Zhang Qian;Zhang Yuming;and Zhang Yimen

..............page:33-36

A 4.2-5GHz,low phase noise LC-VCO with constant bandwidth and small tuning gain
Xu Conghui;Xi Jingtian;Lu Lei;Yang Yuqing;Tan Xi;Yan Na;and Min Hao

..............page:62-65

Epitaxial growth on 4H-SiC by TCS as a silicon precursor
Ji Gang;Sun Guosheng;Liu Xingfang;Wang Lei;Zhao Wanshun;Zeng Yiping;and Li Jinmin

..............page:21-25

Crosstalk of HgCdTe LWIR n-on-p diode arrays
Sun Yinghui;Zhang Bo;Yu Meifang;Liao Qingjun;Zhang Yan;Wen Xin;Jiang Peilu;Hu Xiaoning;and Dai Ning

..............page:49-52

Two-step Ni silicide process and influence of protective N₂ gas
Shang Haiping and Xu Qiuxia

..............page:139-141

A high speed direct digital frequency synthesizer realized by a segmented nonlinear DAC
Yuan Ling1;Ni Weining1;Hao Zhikun1;Shi Yin1;and Li Wenchang2

..............page:66-69

Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreading layer
Yang Hua;Wang Xiaofeng;Ruan Jun;Li Zhicong;Yi Xiaoyan;Duan Yao;Zeng Yiping;and Wang Guohong

..............page:29-32

A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current
Zhu Yangjun1;Miao Qinghai2;Zhang Xinghua2;and Han Zhengsheng1

..............page:41-44

Design and fabrication of a planar patch-clamp substrate using a silicon-on-insulator wafer
Zhang Zhenlong;Liu Xiangyang;and Mao Yanli

..............page:135-138

Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures
Duan Huantao;Hao Yue;and Zhang Jincheng

..............page:1-4

Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers
Zhang Shuai1;2;Zhang Zhengxuan1;Bi Dawei1;2;Chen Ming1;2;Tian Hao1;2;Yu Wenjie1;2;Wang Ru1;2;and Liu Zhangli1;2

..............page:5-8