Chinese Journal of Semiconductors 2009 Issue 8 Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications
Xie Jing1; 2; Liu Yunfei1; 2; Yang Jinling1; 2; Tang Longjuan1; 2; and Yang Fuhua1

..............page:34-38

Design of a monolithic millimeter-wave doubly-balanced mixer in GaAs
Xu Leijun1; 2; Wang Zhigong1; and Li Qin1

..............page:119-122

Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide
Feng Song1; Gao Yong1; Yang Yuan1; and Feng Yuchun2

..............page:90-94

NTC and electrical properties of nickel and gold doped n-type silicon material
Dong Maojin1; 2; Chen Zhaoyang1; Fan Yanwei1; Wang Junhua1; Tao Mingde1; and Cong Xiuyun1

..............page:52-55

A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks
He Jin1; 2; Ma Chenyue2; Zhang Lining2; Zhang Jian2; and Zhang Xing2

..............page:63-66

Noise performance in AlGaN/GaN HEMTs under high drain bias
Pang Lei; Pu Yan; Liu Xinyu; Wang Liang; and Liu Jian

..............page:67-70

(NH₄)₂S treatment of the Si （100） surface and its effects on Al/Si Schottky barrier heights
Hu Aibin; Wang Wenwu; and Xu Qiuxia

..............page:56-59

AlGaInP LEDs with surface anti-reflecting structure
Chen Yixin; Shen Guangdi; Li Jianjun; Han Jinru; and Xu Chen

..............page:95-97

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
Chen Xiaofeng1; Chen Nuofu1; 2; Wu Jinliang1; 2; Zhang Xiulan1; Chai Chunlin1; and Yu Yude1

..............page:47-51

Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors
Fu Xiaojun1; Zhang Haiying1; Guo Changxin2; Xu Jingbo1; and Li Ming1

..............page:60-62

A new double gate SOI LDMOS with a step doping profile in the drift region
Luo Xiaorong1; ; Zhang Wei1; Gu Jingjing2; Liao Hong1; Zhang Bo1; and Li Zhaoji1

..............page:78-81

Influence of optical phonons on the electronic mobility in a strained wurtzite AlN/GaN heterojunction under hydrostatic pressure
Zhou Xiaojuan and Ban Shiliang

..............page:4-9

An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process
Gao Peijun1; Oh N J2; and Min Hao1

..............page:123-126

Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization
Fu Jun ; Institute of Microelectronics; Tsinghua University; Beijing 100084; China)

..............page:71-77

Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells
Jiang Zhenyu; Dou Yuhua; Zhang Yu; Zhou Yuqin; Liu Fengzhen; and Zhu Meifang

..............page:98-102

Performance analysis of solar cell arrays in concentrating light intensity
Xu Yongfeng1; 2; Li Ming1; Wang Liuling2; Lin Wenxian1; Xiang Ming2; Zhang Xinghua2; Wang Yunfeng2; and Wei Shengxian2

..............page:103-108

A low power cyclic ADC design for a wireless monitoring system for orthopedic implants
Chen Yi; Li Fule; Chen Hong; Zhang Chun; and Wang Zhihua

..............page:147-152

Visible photoluminescence of porous silicon covered with an HfON dielectric layer
Jiang Ran1; and Zhang Yan2

..............page:14-17

A 1.8V LDO voltage regulator with foldback current limit and thermal protection
Liu Zhiming; Fu Zhongqian; Huang Lu; and Xi Tianzuo

..............page:136-140

Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm silicide CMOS technology
Jiang Yuxi; Li Jiao; Ran Feng; Cao Jialin; and Yang Dianxiong

..............page:82-89

Room-temperature electroluminescence of p-Zn_xMg_1-xO:Na/n-ZnO p-n junction light emitting diode
Ye Zhizhen; Zhang Liqiang; Huang Jingyun; Zhang Yinzhu; Zhu Liping; L Bin; L Jianguo; Wang Lei; Jin Yizheng; Jiang Jie; Xue Y; Zhang Jun; Lin Shisheng; and Yang Dan

..............page:1-3

A VCO sub-band selection circuit for fast PLL calibration
Song Ying; Wang Yuan; Jia Song; and Zhao Baoying; Institute of Microelectronics; Peking University; Beijing 100871; China)

..............page:153-155

Effect of annealing on characteristics of a HfO_xN_y-HfO₂-HfO_xN_y sandwich stack compared with HfO₂ film
Zhang Yan1 and Jiang Ran2;

..............page:18-22

Temperature self-adaptive program algorithm on 65nm MLC NOR flash memory
Shi Weihua1; Hong Zhiliang1; Hu Chaohong2; and Kang Yong2 Co. Ltd; Shanghai 200131; China)

..............page:160-163

Design for an IO block array in a tile-based FPGA
Ding Guangxin; Chen Lingdou; and Liu Zhongli

..............page:141-146

Wafer level hermetic packaging based on Cu-Sn isothermal solidification technology
Cao Yuhan and Luo Le

..............page:164-168

Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon
Zhang Changsha1; Zeng Xiangbo1; Peng Wenbo1; Shi Mingji1; Liu Shiyong1; Xiao Haibo1; Wang Zhanguo1; Chen Jun2; and Wang Shuangqing2

..............page:39-42

A low-noise PLL design achieved by optimizing the loop bandwidth
Bai Chuang; Zhao Zhenyu; and Zhang Minxuan

..............page:156-159

Testing content addressable memories with physical fault models
Ma Lin1; 2; Yang Xu1; Zhong Shiqiang1; and Chen Yunji1

..............page:109-115

A novel fully differential telescopic operational transconductance amplifier
Li Tianwang1; Ye Bo2; and Jiang Jinguang1;

..............page:116-118

An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning
Chen Fangxiong1; Lin Min2; Ma Heping1; Jia Hailong1; Shi Yin1; and Dai Forster3

..............page:127-131

Luminescence spectroscopy of ion implanted AlN bulk single crystal
Li Weiwei1; Zhao Youwen1; Dong Zhiyuan1; Yang Jun1; Hu Weijie1; Ke Jianhong1; Huang Yan2; and Gao Zhenhua2

..............page:31-33

Synthesis of ZnS whiskers and their photoluminescence properties
Du Yuanyuan; Jie Wanqi; and Li Huanyong

..............page:43-46

TDDB improvement by optimized processes on metal-insulator-silicon capacitors with atomic layer deposition of Al₂O₃ and multi layers of TiN film structure
Peng Kun1; 2; 3; Wang Biao2; Xiao Deyuan3; Qiu Shengfen3; Lin D C3; Wu Ping3; and Yang S F3;

..............page:23-27

Charge transport performance of high resistivity CdZnTe crystals doped with In/Al
Xu Yadong1; 2; Xu Lingyan1; Wang Tao1; Zha Gangqiang1; Fu Li1; Jie Wanqi1; and Sellin P2

..............page:10-13

An offset-insensitive switched-capacitor bandgap reference with continuous output
Zheng Peng; Yan Wei; Zhang Ke; and Li Wenhong

..............page:132-135

Raman scattering studies on PZT thin films for trigonal-tetragonal phase transition
Liang Ting; Li Junhong; Du Wenlong; Xue Chenyang; and Zhang Wendong

..............page:28-30