Chinese Journal of Semiconductors 2009 Issue 6 A CMOS image-rejection mixer with 58-dB IRR for DTV receivers

A CMOS image-rejection mixer with 58-dB IRR for DTV receivers
Yuan Shuai;Li Zhiqun;Huang Jing;and Wang Zhigong

..............page:94-99

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process
Feng Xiaoxing;Zhang Xing;Ge Binjie;and Wang Xin’an

..............page:83-87

A low power high linearity baseband for a direct conversation CMMB tuner
Ma Heping1;Yuan Fang1;Shi Yin1;Lan Xiaoming1;and Dai Fa Foster2

..............page:116-120

Robustness aware high performance high fan-in domino OR logic design
Gong Na1;Wang Jinhui2;Guo Baozeng1;Wang Yongqing1;Cao Xiaobing1;and Tian Xiuli1

..............page:107-110

Design and analysis of a highly-integrated CMOS power amplifier for RFID readers
Gao Tongqiang1;Zhang Chun2;Chi Baoyong2;and Wang Zhihua2

..............page:121-125

Design and implementation of a delay-optimized universal programmable routing circuit for FPGAs
Wu Fang;Zhang Huowen;Lai Jinmei;Wang Yuan;Chen Liguang;Duan Lei;and Tong Jiarong

..............page:132-137

Overlay mark optimization for thick-film resist overlay metrology
Zhu Liang1;2;3Li Jie3;Zhou Congshu3;Gu Yili3;and Yang Huayue3

..............page:142-146

A cascaded charge-sharing technique for an EDP-efficient match-line design in CAMs
Zhang Jianwei1;Ye Yizheng1;Liu Binda2;and Lan Jinbao1

..............page:126-131

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting
Hao Yafei;Chen Yonghai;Hao Guodong;and Wang Zhanguo

..............page:11-14

Si₂Sb₂Te₅ phase change material studied by an atomic force microscope nano-tip
Liu Yanbo1;2;Zhang Ting2;Niu Xiaoming1;Song Zhitang2;Min Guoquan1;Zhang Jing1;Zhou Weimin1;Wan Yongzhong1;Zhang Jianping1;Li Xiaoli1;and Feng Songlin2

..............page:34-37

Reliability of AlGaInP light emitting diodes with an ITO current spreading layer
Gao Wei;Guo Weiling;Zhu Yanxu;Jiang Wenjing;and Shen Guangdi

..............page:61-63

InP-base resonant tunneling diodes
Han Chunlin1;Chen Chen1;Zou Penghui1;Zhang Yang2;Zeng Yiping2;Xue Fangshi1;Gao Jianfeng1;Zhang Zheng1;and Geng Tao1

..............page:48-50

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell
Shi Mingji;Wang Zhanguo;Liu Shiyong;Peng Wenbo;Xiao Haibo;Zhang Changsha;and Zeng Xiangbo

..............page:25-28

Characteristics of vertical double-gate dual-strained-channel MOSFETs
Gao Yong;Yang Jing;Yang Yuan;and Liu Jing

..............page:51-56

Large-signal modeling method for power FETs and diodes
Sun Lu;Wang Jiali;Wang Shan;Li Xuezheng;Shi Hui;Wang Na;and Guo Shengping

..............page:57-60

Experimental study on the single event latchup simulated by a pulse laser
Yang Shiyu;Cao Zhou;Li Danming;Xue Yuxiong;and Tian Kai

..............page:79-82

Temperature:a critical parameter affecting the optical properties of porous silicon
Long Yongfu1;Ge Jin2;Ding Xunmin2;and Hou Xiaoyuan2;Fudan University;Shanghai 200433;China)

..............page:29-33

Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes
Li Yingying;Cheng Chuanwei;Dong Xiang;Gao Junshan;and Zhang Haiqian

..............page:38-41

Tricolor microcavity OLEDs based on P-nc-Si:H films as the complex anodes
Li Yang1;3 Liu Xingyuan2;Wu Chunya3;Meng Zhiguo3;Wang Yi1;and Xiong Shaozhen3

..............page:42-47

Influence of electron irradiation on the switching speed in insulated gate bipolar transistors
Lu Shuojin;Wang Lixin;Lu Jiang;Liu Gang;and Han Zhengsheng

..............page:76-78

A novel method using SiNW to measure stress in cantilevers
Jiang Yanfeng1;2 and Wang Jianping2

..............page:72-75

Fast patterning and dry-etch of SiN_x for high resolution nanoimprint templates
Shu Zhen1;Wan Jing1;Lu Bingrui1;Xie Shenqi1;Chen Yifang2;Qu Xinping1;and Liu Ran1

..............page:138-141

Adaptive digital calibration techniques for narrow band low-IF receivers with on-chip PLL
Li Juan;Zhang Huajiang;Zhao Feng;and Hong Zhiliang

..............page:100-106

Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell
Hu Yuehui;Zhang Xiangwen;Qu Minghao;Wang Lifu;Zeng Tao;and Xie Yaojiang

..............page:68-71

Effects of electron-and impurity-ion-LO phonon couples on the impurity states in cylindrical quantum wires
Zhao Zengru and Liang Xixia

..............page:15-19

Current mode ADC design in a 0.5-μm CMOS process
Sun Yong;Lai Fengchang;and Ye Yizheng

..............page:88-93

The Complete Semiconductor Transistor and Its Incomplete Forms
Jie Binbin1 and Sah Chih-Tang1;2;3;

..............page:1-10

A 60-dB linear VGA with novel exponential gain approximation
Zhou Jiaye;Tan Xi;Wang Junyu;Tang Zhangwen;and Min Hao

..............page:111-115

Atomistic simulations of the tensile and melting behavior of silicon nanowires
Jing Yuhang;Meng Qingyuan;and Zhao Wei

..............page:20-24

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser
Chong Feng;Wang Jun;Xiong Cong;Wang Cuiluan;Han Lin;Wu Peng;Wang Guan;and Ma Xiaoyu

..............page:64-67