Chinese Journal of Semiconductors 2009 Issue 5 Downward uniformity and optical properties of porous silicon layers

Downward uniformity and optical properties of porous silicon layers
Long Yongfu1and Ge Jin2

..............page:9-13

Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs
Pang Lei;Pu Yan;Liu Xinyu;Wang Liang;Li Chengzhan;Liu Jian;Zheng Yingkui;and Wei Ke

..............page:28-31

Annealing behavior of radiation damage in JFET-input operational amplifiers
Zheng Yuzhan;2;Lu Wu1;Ren Diyuan1;Wang Yiyuan1;2;Guo Qi1;and Yu Xuefeng1

..............page:60-64

A novel MEMS inertial sensor with enhanced sensing capacitors
Dong Linxi1;Yan Haixia2;Huo Weihong1;Xu Li1;Li Yongjie1;and Sun Lingling1

..............page:36-42

Development and characteristics analysis of recessed-gate MOS HEMT
Wang Chong;Ma Xiaohua;Feng Qian;Hao Yue;Zhang Jincheng;and Mao Wei

..............page:32-35

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology
Su Shi and Liao Xiaoping

..............page:43-46

Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction
Liu Hongxia1;Zhang Heming1;and Zhang Zhiyong2

..............page:5-8

Design of a 40-GHz LNA in 0.13-μm SiGe BiCMOS
Xu Leijun1;2;Wang Zhigong1;Li Qin1;and Zhao Yan1

..............page:82-85

A 16-bit cascaded sigma-delta pipeline A/D converter
Li Liang;Li Ruzhang;Yu Zhou;Zhang Jiabin;and Zhang Jun’an

..............page:103-108

Low-power wide-locking-range injection-locked frequency divider for OFDM UWB systems
Yin Jiangwei1;Li Ning1;Zheng Renliang1;Li Wei1;and Ren Junyan1;2

..............page:72-76

Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers
Wu Tuo1;Chen Hongyi1;and Qian Dahong2

..............page:65-71

A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit
Peng Yanjun1;2;Song Jiayou1;3;Wang Zhigong1;and Tsang K F2

..............page:96-98

A 10-bit 50-MS/s sample-and-hold circuit with low distortion sampling switches
Zhu Xubin;Ni Weining;and Shi Yin

..............page:109-112

An approach to the optical interconnect made in standard CMOS process
Yu Changliang;Mao Luhong;Xiao Xindong;Xie Sheng;and Zhang Shilin

..............page:113-116

A 540-μW digital pre-amplifier with 88-dB dynamic range for electret microphones
Liu Yan1;Hua Siliang1;2;Wang Donghui1;and Hou Chaohuan1

..............page:77-81

Modeling and analysis of single-event transients in charge pumps
Zhao Zhenyu;Li Junfeng;Zhang Minxuan;and Li Shaoqing

..............page:86-90

Design of Ka-band antipodal finline mixer and detector
Yao Changfei;Xu Jinping;and Chen Mo

..............page:99-102

Epitaxy and Characteristics of Resonant Cavity LEDs at 650nm
Kang Yuzhu;Li Jianjun;Ding Liang;Yang Zhen;Han Jun;Deng Jun;Zou Deshu;and Shen Guangdi

..............page:47-49

First-principles calculation of the electronic band of ZnO doped with C
Si Panpan1;Su Xiyu1;Hou Qinying2;Li Yadong3;and Cheng Wei1

..............page:1-4

Numerical analysis of four-wave-mixing based multichannel wavelength conversion techniques in fibers
Jia Liang1;2;Zhang Fan2;Li Ming2;Liu Yuliang1;and Chen Zhangyuan2

..............page:55-59

W-plug via electromigration in CMOS process
Zhao Wenbin1;2;Chen Haifeng2;Xiao Zhiqiang2;Li Leilei1;and Yu Zongguang1;2

..............page:117-120

Optimization of the acid leaching process by using an ultrasonic field for metallurgical grade silicon
Zhang Jian;Li Tingju;Ma Xiaodong;Luo Dawei;Liu Ning;and Liu Dehua

..............page:22-27

A 20-Gb/s 1:2 demultiplexer in 0.18-μm CMOS
Zhang Changchun;Wang Zhigong;Shi Si;and Li Wei

..............page:91-95

A novel symmetrical microwave power sensor based on MEMS technology
Wang Debo and Liao Xiaoping

..............page:50-54

Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering
Chen Huimin1;Guo Fuqiang1;2;and Zhang Baohua1

..............page:18-21

Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering
Zhuo Shiyi;Xiong Yuying;and Gu Min

..............page:14-17