Chinese Journal of Semiconductors 2009 Issue 4 High-performance micromachined gyroscope with a slanted suspension cantilever

High-performance micromachined gyroscope with a slanted suspension cantilever
Xiao Dingbang; Wu Xuezhong; Hou Zhanqiang; Chen Zhihua; Dong Peitao; and Li Shengyi

..............page:68-71

Design of an ultra-low-power digital processor for passive UHF RFID tags
Shi Wanggen; Zhuang Yiqi; Li Xiaoming; Wang Xianghua; Jin Zhao; and Wang Dan

..............page:87-90

An ultra-low-power CMOS temperature sensor for RFID applications
Xu Conghui; Gao Peijun; Che Wenyi; Tan Xi; Yan Na; and Min Hao

..............page:83-86

Design of a 24–40 GHz balanced low noise amplifier using Lange couplers
Zhang Zongnan; Huang Qinghua; Hao Mingli; Yang Hao; and Zhang Haiying

..............page:72-75

A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation
Zhou Qianneng; Wang Yongsheng; and Lai Fengchang

..............page:96-101

Effects of pattern characteristics on copper CMP
Ruan Wenbiao; Chen Lan; Li Zhigang; and Ye Tianchun

..............page:119-123

A 10 Gb/s receiver with half rate period calibration CDR and CTLE/DFE combiner
Gao Zhuo1;2; Yang Zongren1; Zhao Ying1; Yang Yi1;2; Zhang Lu1; Huang Lingyi1; and Hu Weiwu1

..............page:107-113

Design of anti-jamming current-sensing circuit for current-mode buck regulator
Yuan Bing1;2; Lai Xinquan1; Li Yanming2; Ye Qiang1; and Jia Xinzhang2

..............page:114-118

Surface morphology of [110] a-plane GaN growth by MOCVD on [1■02] r-plane sapphire
Xu Shengrui; Hao Yue; Duan Huantao; Zhang Jincheng; Zhang Jinfeng; Zhou Xiaowei; Li Zhiming; and Ni Jinyu

..............page:15-18

Degradation of ultra-thin gate oxide LDD NMOSFET under GIDL stress
Hu Shigang; Hao Yue; Cao Yanrong; Ma Xiaohua; Wu Xiaofeng; Chen Chi; and Zhou Qingjun

..............page:35-38

Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering
Zhang Huafu; Lei Chengxin; Liu Hanfa; and Yuan Changkun

..............page:19-22

Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure
Liu Xiang1; Wei Fuxiang2; and Liu Hui3

..............page:48-51

Unipolar resistive switching of Au⁺-implanted ZrO₂ films
Liu Qi1;2; Long Shibing1; Guan Weihua1; Zhang Sen1; Liu Ming1; and Chen Junning2;

..............page:4-7

Thermal analysis and test for single concentrator solar cells
Cui Min; Chen Nuofu1;2; Yang Xiaoli1; Wang Yu1; Bai Yiming1; and Zhang Xingwang1

..............page:64-67

Optimized design of 4H-SiC floating junction power Schottky barrier diodes
Pu Hongbin; Cao Lin; Chen Zhiming; and Ren Jie

..............page:23-25

Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs
Zhou Shouli1;Xiong Deping; and Qin Yali1

..............page:31-34

Microwave frequency detector at X-band using GaAs MMIC technology
Zhang Jun; Liao Xiaoping; and Jiao Yongchang

..............page:56-59

A new level-shifting structure with multiply metal rings by divided RESURF technique
Liu Jizhi and Chen Xingbi

..............page:39-43

A high-efficiency high-power evanescently coupled UTC-photodiode
Zhang Yunxiao; Liao Zaiyi; Zhao Lingjuan; Zhu Hongliang; Pan Jiaoqing; and Wang Wei

..............page:52-55

Design procedure for optimizing CMOS low noise operational amplifiers
Li Zhiyuan; Ye Yizheng; and Ma Jianguo

..............page:91-95

Optical properties in 1D photonic crystal structure using Si/C₆₀ multilayers
Chen Jing1; Tang Jiyu1; Han Peide2; and Chen Junfang1

..............page:8-10

A cross-coupled-structure-based temperature sensor with reduced process variation sensitivity
Tie Meng and Cheng Xu

..............page:76-82

A fast-settling frequency-presetting PLL frequency synthesizer with process variation compensation and spur reduction
Yan Xiaozhou; Kuang Xiaofei; and Wu Nanjian

..............page:102-106

Design and fabrication of a terminating type MEMS microwave power sensor
Xu Yinglin and Liao Xiaoping

..............page:60-63

Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH
Ji Tao1; Yang Licheng2; Li Hairong2; He Shanhu2; and Li Siyuan2

..............page:44-47

Growth and electrical properties of high-quality Mg-doped p-type Al_0.2Ga_0.8N films
Zhou Xiaowei; Li Peixian; Xu Shengrui; and Hao Yue

..............page:11-14

~(60)Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors
Gu Wenping; Chen Chi; Duan Huantao; Hao Yue; Zhang Jincheng; Wang Chong; Feng Qian; and Ma Xiaohua

..............page:26-30