Chinese Journal of Semiconductors 2009 Issue 12 TaN wet etch for application in dual-metal-gate integration technology

TaN wet etch for application in dual-metal-gate integration technology
Li Yongliang and Xu Qiuxia

..............page:133-136

Simulation for signal charge transfer of charge coupled devices
Wang Zujun 1;2;Liu Yinong 1;Chen Wei 2;Tang Benqi 2;Xiao Zhigang 2;Huang Shaoyan2;Liu Minbo 2;and Zhang Yong 2

..............page:42-49

A 1-V 60-μW 85-dB dynamic range continuous-time third-order sigma-delta modulator
Li Yuanwen 1;Qi Da 1;Dong Yifeng 1;Xu Jun 1;and Ren Junyan1;2

..............page:118-122

A symbolically defined InP double heterojunction bipolar transistor large-signal model
Cao Yuxiong;Jin Zhi;Ge Ji;Su Yongbo;and Liu Xinyu

..............page:37-41

A 3.1-4.8GHz transmitter with a high frequency divider in 0.18μm CMOS for OFDM-UWB
Zheng Renliang;Ren Junyan;Li Wei and Li Ning

..............page:69-76

A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure
Liu Jizhi and Chen Xingbi

..............page:58-63

Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers
Zhao Lixin;Jin Zhi;and Liu Xinyu

..............page:50-57

A constant-g_m and high-slew-rate operational amplifier for an LCD driver
Lai Xinquan;Li Xinlin;Ye Qiang;Yuan Bing;and Li Xianrui

..............page:64-68

A multi-mode low ripple charge pump with active regulation
Ye Qiang;Lai Xinquan;Xu Luping Wang Hui;Zeng Huali;and Chen Fuji

..............page:87-92

Low-power CMOS fully-folding ADC with a mixed-averaging distributed T/H circuit
Liu Zhen;Jia Song;Wang Yuan;Ji Lijiu;and Zhang Xing

..............page:128-132

Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film
Chi Yaqing1; Zhong Haiqin1; Zhang Xueao2; Fang Liang1; and Chang Shengli2

..............page:1-4

A bootstrapped switch employing a new clock feed-through compensation technique
Wu Xiaofeng 1;2;Liu Hongxia 1;Su Li3;Hao Yue 1;Li Di 1;and Hu Shigang 1 Ltd;Shanghai 200070;China)

..............page:93-102

Stress,structural and electrical properties of Si-doped GaN film grown by MOCVD
Xu Zhihao;Zhang Jincheng;Duan Huantao;Zhang Zhongfen;Zhu Qingwei;Xu Hao and Hao Yue

..............page:13-17

ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light
Cheng Ping;Zhang Yuming;Zhang Yimen;and Guo Hui

..............page:9-12

Improvements to the extraction of an AlGaN/GaN HEMT small-signal model
Pu Yan;Pang Lei;Wang Liang;Chen Xiaojuan;Li Chengzhan;and Liu Xinyu

..............page:25-29

Clear correspondence between gated-diode R–G current and performance degradation of SOI n-MOSFETs after F-N stress tests
He Jin1;2;Ma Chenyue2;Wang Hao2;Chen Xu2;Zhang Chenfei2;Lin Xinnan1;and Zhang Xing2

..............page:30-32

GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
Zhang Xiaoying 1;Ruan Yujiao 2;Chen Songyan2;and Li Cheng2

..............page:5-8

Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs
Yuan Tingting;Liu Xinyu;Zheng Yingkui;Li Chengzhan;Wei Ke;and Liu Guoguo

..............page:18-20

A variable step-down conversion ratio switched capacitor DC-DC converter for energy harvesting systems working in intermittent mode
Hao Wenhan;Jia Chen;Chen Hong;Zhang Chun;and Wang Zhihua

..............page:103-107

An improved HCI degradation model for a VLSI MOSFET
Tang Yi1;Wan Xinggong1;Gu Xiang2;Wang Wenyuan2; Zhang Huirui2;and Liu Yuwei2

..............page:33-36

A four-channel microelectronic system for neural signal regeneration
Xie Shushan 1;Wang Zhigong 1;L  Xiaoying 2;Li Wenyuan 1;and Pan Haixian 2

..............page:81-86

Monte Carlo analysis of a low power domino gate under parameter fluctuation
Wang Jinhui;Wu Wuchen 1;Gong Na 2;Hou Ligang 1;Peng Xiaohong 1;and Gao Daming 1

..............page:113-117

A 1.5Gb/s monolithically integrated optical receiver in the standard CMOS process
Xiao Xindong;Mao Luhong;Yu Changliang;Zhang Shilin;and Xie Sheng

..............page:77-80

Tunable current mirror and its application in LNA
Li Kun 1;Teng Jianfu1;2;Yu Changliang 1;and Huang Jianyao 1

..............page:123-127

Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Quan Si;Hao Yue;Ma Xiaohua Xie Yuanbin;and Ma Jigang

..............page:21-24

Author index to Volume 30

..............page:137-154

A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs
Zhao Zhenyu;Zhang Minxuan;Chen Shuming;Chen Jihua;and Li Junfeng

..............page:108-112