Chinese Journal of Semiconductors 2009 Issue 11 Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals
Ni Henan1;Wu Liangcai2;Song Zhitang2;and Hui Chun3

..............page:38-42

Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition
Xu Shengrui1;Zhou Xiaowei1;Hao Yue1;Mao Wei1;Zhang Jincheng1;Zhang Zhongfen1;Bai Lin2;Zhang Jinfeng1;and Li Zhiming1

..............page:14-16

A three-dimensional breakdown model of SOI lateral power transistors with a circular layout
Guo Yufeng1;2;Wang Zhigong1;and Sheu Gene3

..............page:51-54

Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating
Li Zhiming;Xu Shengrui;Zhang Jincheng;Chang Yongming;Ni Jingyu;Zhou Xiaowei;and Hao Yue

..............page:26-30

Noise and mismatch optimization for capacitive MEMS readout
Zhang Chong1;2;Wu Qisong1;2;Yin Tao1;and Yang Haigang1;

..............page:88-93

Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQW grown by MOCVD
Liu Naixin;Wang Junxi;Yan Jianchang;Liu Zhe;Ruan Jun;and Li Jinmin

..............page:21-25

Estimation of electron mobility of n-doped 4,7-diphenyl-1,10-phenanthroline using space-charge-limited currents
Khizar-ul-Haq1;Khan M A1;Jiang Xueyin1;Zhang Zhilin1;2;Zhang Xiaowen1;Zhang Liang1;and Li Jun1

..............page:63-66

InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures
Yu Jinyong;Liu Xinyu;and Xia Yang

..............page:31-33

Single-mode GaAs/AlGaAs quantum cascade microlasers
Gao Yu;Liu Junqi;Liu Fengqi;Zhang Wei;Zhang Quande;Liu Wanfeng;Li Lu;Wang Lijun;and Wang Zhanguo

..............page:55-58

Novel lateral IGBT with n-region controlled anode on SOI substrate
Chen Wensuo;Xie Gang;Zhang Bo;Li Zehong;and Li Zhaoji

..............page:47-50

Modeling and discussion of threshold voltage for a multi-floating gate FET pH sensor
Shi Zhaoxia1;and Zhu Dazhong2

..............page:71-74

Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET
Zhao Xiaofeng1;2 and Wen Dianzhong1;2;

..............page:34-37

First principles study of the Be-C co-doped MgB₂ system
Su Xiyu1;Zhi Xiaofen1;Hou Qinying2;Cheng Wei1;and Liu Jiaxue1

..............page:1-5

Circuit design of a novel FPGA chip FDP2008
Wu Fang;Wang Yabin;Chen Liguang;Wang Jian;Lai Jinmei;Wang Yuan;and Tong Jiarong

..............page:121-126

Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure
Zhang Yang1;Zhang Renping2;Han Weihua2;Liu Jian1;Yang Xiang2;Wang Ying2;Li Chian Chiu3;and Yang Fuhua1;2

..............page:127-130

A linear array of 980nm VCSEL and its high temperature operation characteristics
Zhang Yan1;2;Ning Yongqiang1;Wang Ye1;2;Liu Guangyu1;2;Wang Zhenfu1;2;Zhang Xing1;2;Shi Jingjing1;2;Zhang Lisen1;2;Wang Wei1;2;Qin Li1;Sun Yanfang1;Liu Yun1;and Wang Lijun1

..............page:59-62

Design of a DTCTGAL circuit and its application
Wang Pengjun;Li Kunpeng;and Mei Fengna

..............page:103-108

Working mechanism of a SiC nanotube NO₂ gas sensor
Ding Ruixue;Yang Yintang;and Liu Lianxi

..............page:67-70

A 12-bit 100 MS/s pipelined ADC with digital background calibration
Zhou Liren;Luo Lei;Ye Fan;Xu Jun;and Ren Junyan

..............page:109-113

Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films
Zhang Huafu;Liu Hanfa;Zhou Aiping;and Yuan Changkun

..............page:17-20

A 10 GHz high-efficiency and low phase-noise negative-resistance oscillator optimized with a virtual loop model
Wang Xiantai;Jin Zhi;Wu Danyu;Shen Huajun;and Liu Xinyu

..............page:75-78

Effects of Sn-doping on morphology and optical properties of CdTe polycrystalline films
Li Jin;Yang Linyu;Jian Jikang;Zou Hua;and Sun Yanfei

..............page:10-13

Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology
Wu Chia-Song and Liu Hsing-Chung

..............page:43-46

Anisotropic polarization due to electron-phonon interactions in graphene
Li Wuqun and Cao Juncheng

..............page:6-9

An eighth order channel selection filter for low-IF and zero-IF DVB tuner applications
Zou Liang1;Liao Youchun2;and Tang Zhangwen1;

..............page:79-87

Realization of an analog predistortion circuit for RF optical fiber links
Tian Xuenong;Wang Zhigong;and Li Wei

..............page:99-102

A low power high gain UWB LNA in 0.18-μm CMOS
Cai Li;Fu Zhongqian;and Huang Lu

..............page:94-98

Accurate metamodels of device parameters and their applications in performance modeling and optimization of analog integrated circuits
Liang Tao;Jia Xinzhangand Chen Junfeng

..............page:114-120