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Chinese Journal of Semiconductors
0253-4177
2009 Issue 1
A novel low-voltage operational amplifier for low-power pipelined ADCs
Fan Mingjun1;2; Ren Junyan1; Guo Yao1; Li Ning1; Ye Fan1; and Li Lian1
..............
page:82-85
Modeling and analysis of power extraction circuits for passive UHF RFID applications
Fan Bo; Dai Yujie; Zhang Xiaoxing; and L Yingjie
..............
page:90-99
5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end
Zhang Xuelian1; Yan Jun1; Shi Yin1;and Dai Fa Foster2
..............
page:77-81
Design of a 16 gray scales 320×240 pixels OLED-on-silicon driving circuit
Huang Ran; Wang Xiaohui; Wang Wenbo; Du Huan; and Han Zhengsheng
..............
page:86-89
Solution of the time-dependent Schrdinger equation with absorbing boundary conditions
Chen Zhidong; Zhang Jinyu; and Yu Zhiping
..............
page:1-6
Improved optical performance of GaN grown on pattered sapphire substrate
Yao Guangrui; Fan Guanghan; Li Shuti; Zhang Yong; and Zhou Tianmin
..............
page:7-10
Effect of total ionizing dose radiation on the 0.25 μm RF PDSOI nMOSFETs with thin gate oxide
Liu Mengxin; Han Zhengsheng; Bi Jinshun; Fan Xuemei; Liu Gang; and Du Huan
..............
page:23-29
Design and fabrication of an embedded wire-grid nanograting
Zhou Libing and Zhu Wei
..............
page:34-38
Design and analysis of a UWB low-noise amplifier in the 0.18μm CMOS process
Yang Yi1;2; Gao Zhuo1;2;Yang Liqiong1; Huang Lingyi1; and Hu Weiwu1
..............
page:39-43
A 0.18μm CMOS fluorescent detector system for bio-sensing application
Liu Nan; Chen Guoping; and Hong Zhiliang
..............
page:44-49
Monolithic white LED based on Al
x
Ga
1-x
N/InyGa
1-y
N DBR resonant-cavity
Chen Yu1; Huang Lirong2; and Zhu Shanshan1
..............
page:30-33
Characterization of the triple-gate flash memory endurance degradation mechanism
Cao Zigui1;2;3; Sun Ling1;2;3 ; and Lee Elton 3
..............
page:19-22
A fully integrated BPSK amplitude and spectrum tunable transmitter for IR-UWB system
Xia Lingli; Huang Yumei; and Hong Zhiliang
..............
page:65-69
Design and measurement of a 53 GHz balanced Colpitts oscillator
Zhao Yan; Wang Zhigong; Li Wei; and Zhang Li
..............
page:50-53
A 10–20 Gb/s PAM2-4 transceiver in 65 nm CMOS
Gao Zhuo1;2; Yang Yi1;2; Zhong Shiqiang1; Yang Xu1; Huang Lingyi1; and Hu Weiwu1
..............
page:54-58
Ultra high-speed InP/InGaAs DHBTs with f_t of 203 GHz
Su Yongbo1; Jin Zhi1; Cheng Wei1; Liu Xinyu1; Xu Anhuai2; and Qi Ming2
..............
page:16-18
A novel GAAC FinFET transistor:device analysis, 3D TCAD simulation, and fabrication
Xiao Deyuan1;2; Wang Xi1; Yuan Haijiang3; Yu Yuehui 1; Xie Zhifeng2; and Chi Minhwa2 Corporation; Shanghai 201203; China)
..............
page:11-15
A 3.1–4.8 GHz CMOS receiver for MB-OFDM UWB
Yang Guang1; Yao Wang1; Yin Jiangwei1; Zheng Renliang1; Li Wei1; Li Ning1; and Ren Junyan1;2
..............
page:59-64
Microtrenching effect of SiC ICP etching in SF
6
/O
2
plasma
Ding Ruixue1; Yang Yintang1; and Han Ru2
..............
page:100-102
A low-power monolithic CMOS transceiver for 802.11b wireless LANs
Li Weinan; Xia Lingli; Zheng Yongzheng; Huang Yumei; and Hong Zhiliang
..............
page:70-76