Chinese Journal of Semiconductors 2008 Issue 4 Analysis of Processing Chamber Flow Field Characteristics for an ICP Etcher Based on Regression Orthogonal Design

Analysis of Processing Chamber Flow Field Characteristics for an ICP Etcher Based on Regression Orthogonal Design
Cheng Jia;Zhu Yu;Duan Guanghong;Wang Chunhong

..............page:780-784

An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors
Deng Heqing;Lin Guijiang;Lai Hongkai;Li Cheng;Chen Songyan;Yu Jinzhong

..............page:785-788

Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor
Zhu Dapeng;Luo Le

..............page:774-779

Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals
Lü Jin;Chen Yubin;Zuo Zheng;Shi Yi;Pu Lin;Zheng Youdou

..............page:770-773

The Bipolar Theory of the Field-Effect Transistor: X. The Fundamental Physics and Theory(All Device Structures)
Sah Chih-Tang;Jie Binbin

..............page:613-619

The Bipolar Field-Effect Transistor:Ⅴ. Bipolar Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)
Jie Binbin;Sah Chih-Tang

..............page:620-627

Emerging Challenges in ESD Protection for RF ICs in CMOS
Wang Albert;Lin Lin;Wang Xin;Liu Hainan;Zhou Yumei

..............page:628-636

Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide
Guo Hui;Feng Qian;Tang Xiaoyan;Zhang Yimen;Zhang Yuming

..............page:637-640

Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing
Zeng Yugang;Han Genquan;Yu Jinzhong

..............page:641-644

An SIT-BJT Operation Model for SITh in the Blocking State
Yang Jianhong;Wang Zaixing;Li Siyuan

..............page:645-649

OTFT with Bilayer Gate Insulator and Modificative Electrode
Bai Yu;Khizar-ul-Haq;M.A.Khan;Jiang Xueyin;Zhang Zhilin

..............page:650-654

Optimization of a Thermoelectric Microwave Power Sensor
Han Lei;Huang Qing'an;Liao Xiaoping

..............page:789-793

A "Time Reuse" Technique for Design of a Low-Power, High-Speed Multi-Modulus Divider in a Frequency Synthesizer
Yuan Quan;Yang Haigang;Dong Fangyuan;Zhong Lungui

..............page:794-799

A CMOS Down-Converting Mixer For OFDM UWB Receivers
Hu Jiasheng;Li Wei;Li Ning

..............page:800-805

An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs
Zhou Shouli;Ren Xiaomin

..............page:741-745

Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz
Zhao Yuhang;Hu Shaojian;Ren Zheng

..............page:737-740

Structural and Optical Properties of Amorphous MCT Films Deposited by RF Magnetron Sputtering
Kong Jincheng;Kong Lingde;Zhao Jun;Zhang Pengju;Li Hongzhi;Li Xiongjun;Wang Shanli;Ji Rongbin

..............page:733-736

Delay and Energy Efficient Design of an On-Chip Bus with Repeaters Using a New Spatial and Temporal Encoding Technique
Zhang Qingli;Wang Jinxiang;Yu Mingyan;Ye Yizheng

..............page:724-732

A Passive NCITS 256 UHF RFID Transponder
Liu Zhongqi;Sun Xuguang;Bai Rongrong;Zhang Chun;Li Yongming;Wang Zhihua

..............page:719-723

Design and Implementation of an FDP Chip
Chen Liguang;Wang Yabin;Wu Fang;LaiJinmei;Tong Jiarong;Zhang Huowen;Tu Rui;Wang Jian;Wang Yuan;Shen Qiushi;Yu Hui;Huang Junnai;Lu Haizhou;Pan Guanghua

..............page:713-718

Top-Down Design of 260k Color TFT-LCD One-Chip Driver ICs
Wei Tingcun;Gao Wu

..............page:706-712

Design of a High Precision Array Pulse Sensor in TCM
Huai Yongjin;Han Zhengsheng

..............page:701-705

A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors
Zhang Wancheng;Wu Nanjian

..............page:693-700

A High Precision CMOS Opamp Suitable for ISFET Readout
Zhang Chong;Yang Haigang;Wei Jinbao

..............page:686-692

A Novel Three-Section Self-Pulsating DFB Laser with Hybrid Grating
chen ding bo ; zhu hong liang ; liang song ; wang bao jun ; wang lu feng ; kong duan hua ; zhang wei ; wang huan ;sun yu; sun zuo ; zhang yun xiao ; wang lie song

..............page:682-685

An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure
Duan Baoxing;Yang Yintang;Zhang Bo;Li Zhaoji

..............page:677-681

A Novel Equivalent Circuit Model of GaAs PIN Diodes
wu ru fei ;zhang haiying; zhang hai ying ; yin jun jian ; li zuo ; liu hui dong ; liu xun chun

..............page:672-676

1.01μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs
Xu Jingbo;Li Ming;Zhang Haiying;Wang Wenxin;Yin Junjian;Liu Liang;Li Xiao;Zhang Jian;Ye Tianchun

..............page:668-671

The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures
Miao Qinghai;Lu Shujin;Zhang Xinghua;Zong Fujian;Zhu Yangjun

..............page:663-667

A Novel AII-pMOS AC to DC Charge Pump with High Efficiency
Jiang Bowei;Wang Xiao;Min Hao

..............page:660-662

A High Purity Integer-N Frequency Synthesizer in 0.35μm SiGe BiCMOS
Zhang Jian;Li Zhiqiang;Chen Liqiang;Chen Pufeng;Zhang Haiying

..............page:655-659

Research and Implementation Process of a 42" PDP Scan Driver IC"
Hong Hui;Han Yan;Han Chenggong;Wang Yalin

..............page:806-810

Information for authors

..............page:813-814

Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics
Liu Cheng;Cao Chunfang;Lao Yanfeng;Cao Meng;Wu Huizhen

..............page:765-769

Substrate Current and Hot-Carrier-Injection in High Voltage Asymmetrical n-Channel MOS Transistor Technology
Dai Mingzhi;Liu Shaohua;Arthur Cheng;Li Hong;Andrew Yap;Wang Jun;Jiang Liu;Liao Kuanyang

..............page:757-764

Luminescence Characteristics of a Blue-Green Emission Thin Film Electroluminescence Device Based on a ZnSe Emitting Layer
Jiang Weiwe;Zhao Suling;Zhang Fujun;Xu Zheng

..............page:754-756

5Study of a New Pattern of Omni-Directional Reflector AlGaInP Thin-Film Light-Emitting Diodes
Gao Wei;Zou Deshu;Li Jianjun;Guo Weiling;Shen Guangdi

..............page:751-753

A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos
Luan Suzhen;Liu Hongxia;Jia Renxu;Wang Jin

..............page:746-750