0253-4177
2008 Issue 3
A Back-Illuminated Al0.42 Ga0.58 N/Al0.40 Ga0.60 N Heterojunction p-I-n Solar-Blind UV Photodetector
Cheng Caijing;Ding Jiaxin;Zhang Xiangfeng;Zhao Hongyan;Lu Zhengxiong;Si Junjie;Sun Weiguo;Sang Liwen;Zhang Guoyi
Cheng Caijing;Ding Jiaxin;Zhang Xiangfeng;Zhao Hongyan;Lu Zhengxiong;Si Junjie;Sun Weiguo;Sang Liwen;Zhang Guoyi
..............page:566-569
Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs
Zhang Ping;Liu Junlin;Zheng Changda;Jiang Fengyi
Zhang Ping;Liu Junlin;Zheng Changda;Jiang Fengyi
..............page:563-565
Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos
Xu Jian;Ding Lei;Han Zhengsheng;Zhong Chuanjie
Xu Jian;Ding Lei;Han Zhengsheng;Zhong Chuanjie
..............page:559-562
DC Characteristics of A1GaN/GaN HEMTs with a Field Plate Gate
Wei Ke;Liu Xinyu;He Zhijing;Wu Dexin
Wei Ke;Liu Xinyu;He Zhijing;Wu Dexin
..............page:554-558
Dark Ⅰ-Ⅴ Characteristics and Carrier Transport Mechanism in Nano-Crystalline Silicon Thin Film/Crystalline Silicon Hetero-Junction Solar Cells
Liu Fengzhen;Cui Jiedong;Zhang Qunfang;Zhu Meifang;Zhou Yuqin
Liu Fengzhen;Cui Jiedong;Zhang Qunfang;Zhu Meifang;Zhou Yuqin
..............page:549-553
Mechanism of Reverse Snapback on Ⅰ-Ⅴ Characteristics of Power SITHs with Buried Gate Structure
Wang Yongshun;Li Hairong;Wu Rong;Li Siyuan
Wang Yongshun;Li Hairong;Wu Rong;Li Siyuan
..............page:461-466
A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs
Lü Hongliang;Zhang Yimen;Zhang Yuming;Che Yong;Sun Ming
Lü Hongliang;Zhang Yimen;Zhang Yuming;Che Yong;Sun Ming
..............page:458-460
The Theory of Field-Effect Transistors:XI.The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)
Sah Chih-Tang;Jie Binbin
Sah Chih-Tang;Jie Binbin
..............page:397-409
Effects of in situ Annealing on Optical and Structural Properties of GaN Epilayers Grown by HVPE
Duan Chenghong;Qiu Kai;Li Xinhua;Zhong Fei;Yin Zhijun;Han Qifeng;Wang Yuqi
Duan Chenghong;Qiu Kai;Li Xinhua;Zhong Fei;Yin Zhijun;Han Qifeng;Wang Yuqi
..............page:410-413
Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz
Cheng Wei;Jin Zhi;Liu Xinyu;Yu Jinyong;Xu Anhuai;Qi Ming
Cheng Wei;Jin Zhi;Liu Xinyu;Yu Jinyong;Xu Anhuai;Qi Ming
..............page:414-417
Improving Efficiency by Doping PtOEP into Spiro Light-Emitting Devices
Zhao Junqing;Qiao Shizhu;Xu Fuyun;Zhang Ningyu;Pang Yantao;Chen Ying
Zhao Junqing;Qiao Shizhu;Xu Fuyun;Zhang Ningyu;Pang Yantao;Chen Ying
..............page:418-422
A Novel Interconnect Crosstalk Parallel RLC Analyzable Model Based on the 65nm CMOS Process
Zhu Zhangming;Qian Libo;Yang Yintang
Zhu Zhangming;Qian Libo;Yang Yintang
..............page:423-427
A Novel Capacitive Pressure Sensor
Huang Xiaodong;Huang Jianqiu;Qin Ming;Huang Qing'an
Huang Xiaodong;Huang Jianqiu;Qin Ming;Huang Qing'an
..............page:428-432
A Low Voltage, Low Power RF/Analog Front-End Circuit for Passive UHF RFID Tags
Che Wenyi;Yan Na;Yang Yuqing;Min Hao
Che Wenyi;Yan Na;Yang Yuqing;Min Hao
..............page:433-437
Influence of the Electric Field on the Properties of the Bound Magnetopolaron in GaAs Semiconductor Quantum Wells
Shan Shuping;Xiao Jinglin
Shan Shuping;Xiao Jinglin
..............page:438-441
The KP Dispersion Relation Near the △i Valley in Strained Si1-xGex/Si
Song Jianjun;Zhang Heming;Shu Bin;Hu Huiyong;Dai Xianying
Song Jianjun;Zhang Heming;Shu Bin;Hu Huiyong;Dai Xianying
..............page:442-446
Simulation of Gate-All-Around Cylindrical Transistors for Sub-10 Nanometer Scaling
Xiao Deyuan;Xie Joseph;Chi Minhwa;Wang Xi;Yu Yuehui
Xiao Deyuan;Xie Joseph;Chi Minhwa;Wang Xi;Yu Yuehui
..............page:447-457
Fabrication of 4H-SiC MSM Photodiode Linear Arrays
Yang Weifeng;Cai Jiafa;Zhang Feng;Liu Zhuguang;Lü Ying;Wu Zhengyun
Yang Weifeng;Cai Jiafa;Zhang Feng;Liu Zhuguang;Lü Ying;Wu Zhengyun
..............page:570-573
Improving Carbon Nanotube Field Emission Display Luminescence Uniformity by Introducing a Reactive Current Limiting Layer
Li Xin;He Yongning;Liu Weihua;Zhu Changchun
Li Xin;He Yongning;Liu Weihua;Zhu Changchun
..............page:574-577
Gain Characteristics of Er3+/Yb3+ Co-Doped Waveguide Amplifiers
Wang Yuhai;Ma Chunsheng;Li Delu;Zhang Daming
Wang Yuhai;Ma Chunsheng;Li Delu;Zhang Daming
..............page:578-582
A Novel Large-Scale Electromagnetically Actuated MEMS Optical Scanning Mirror
Mu Canjun;Zhang Feiling;Wu Yaming
Mu Canjun;Zhang Feiling;Wu Yaming
..............page:583-587
An Embedded 1.8V 10bit 120MS/s CMOS Current Steering Digital-to-Analog Converter IP Core
Zhu Zhangming;Li Yani;Yang Yintang
Zhu Zhangming;Li Yani;Yang Yintang
..............page:588-592
Effect of Pretreatment of Cleaved Edges on Overgrowth
Zhang Chunling;Tang Lei;Xu Bo;Chen Yonghai;Wang Zhanguo
Zhang Chunling;Tang Lei;Xu Bo;Chen Yonghai;Wang Zhanguo
..............page:544-548
TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD
Zhu Hua;Li Cuiyun;Mo Chunlan;Jiang Fengyi;Zhang Meng
Zhu Hua;Li Cuiyun;Mo Chunlan;Jiang Fengyi;Zhang Meng
..............page:539-543
Evaluation of the Composition Profile of HgCdTe LPE Films by IR Transmission Spectrum
Gu Renjie;Zhang Chuanjie;Yang Jianrong;Chen Xinqiang;Wei Yanfeng
Gu Renjie;Zhang Chuanjie;Yang Jianrong;Chen Xinqiang;Wei Yanfeng
..............page:534-538
Selective Area Growth and Characterization of GaN Grown on c-Sapphire by Hydride Vapor Phase Epitaxy
Lin Guoqiang;Zeng Yiping;Duan Ruifei;Wei Tongbo;Ma Ping;Wang Junxi;Liu Zhe;Wang Xiaoliang;Li Jinmin
Lin Guoqiang;Zeng Yiping;Duan Ruifei;Wei Tongbo;Ma Ping;Wang Junxi;Liu Zhe;Wang Xiaoliang;Li Jinmin
..............page:530-533
Effect of Hydrogenation on Luminescence Properties of ZnO Crystals
Zhang Yuantao;Ma Yan;Zhang Baolin;Du Guotong
Zhang Yuantao;Ma Yan;Zhang Baolin;Du Guotong
..............page:526-529
Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers
Gao Zhiyuan;Hao Yue;Li Peixian;Zhang Jincheng
Gao Zhiyuan;Hao Yue;Li Peixian;Zhang Jincheng
..............page:521-525
A Novel Impedance Matching Approach for Passive UHF RFID Transponder ICs
Chen Liying;Mao Luhong;Wu Shunhua;Zheng Xuan
Chen Liying;Mao Luhong;Wu Shunhua;Zheng Xuan
..............page:516-520
Analysis and Design of a Low-Cost RFID Tag Analog Front-End
Wang Xiao;Tian Jiayin;Yan Na;Min Hao
Wang Xiao;Tian Jiayin;Yan Na;Min Hao
..............page:510-515
A Slice Analysis-Based Bayesian Inference Dynamic Power Model for CMOS Combinational Circuits
Chen Jie;Tong Dong;Li Xianfeng;Xie Jinsong;Cheng Xu
Chen Jie;Tong Dong;Li Xianfeng;Xie Jinsong;Cheng Xu
..............page:502-509
A High Linearity, 13bit Pipelined CMOS ADC
Li Fule;Duan Jingbo;Wang Zhihua
Li Fule;Duan Jingbo;Wang Zhihua
..............page:497-501
Design and Implementation of an Adaptive Slope Compensation Circuit
Chen Fuji;Lai Xinquan;Li Yushan
Chen Fuji;Lai Xinquan;Li Yushan
..............page:593-597
A Method to Locate Parametric Faults in Analog Integrated Circuits
Xie Yongle;Li Xifeng
Xie Yongle;Li Xifeng
..............page:598-605
..............page:606-609
..............page:612
A Low Jitter Design of Ring Oscillators in 1.25GHz Serdes
Xiao Lei;Liu Wei;Yang Lianxing
Xiao Lei;Liu Wei;Yang Lianxing
..............page:490-496
A 10GHz LC Voltage-Controlled Oscillator in 0.25μm CMOS
Wang Huan;Wang Zhigong;Feng Jun;Zhang Li;Li Wei
Wang Huan;Wang Zhigong;Feng Jun;Zhang Li;Li Wei
..............page:484-489
Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation
Sun Ling;Yang Steve
Sun Ling;Yang Steve
..............page:478-483
A Diamond Electrochemical Cleaning Technique for Organic Contaminants on Silicon Wafer Surfaces
Zhang Jianxin;Liu Yuling;Tan Baimei;Niu Xinhuan;Bian Yongchao;Gao Baohong;Huang Yanyan
Zhang Jianxin;Liu Yuling;Tan Baimei;Niu Xinhuan;Bian Yongchao;Gao Baohong;Huang Yanyan
..............page:473-477
Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies
Xia Jun;Wang Zhigong;Wu Xiushan;Li Wei
Xia Jun;Wang Zhigong;Wu Xiushan;Li Wei
..............page:467-472