Chinese Journal of Semiconductors 2008 Issue 2 Theoretical and Experimental Investigation of SGDBR on Sampled Grating

Theoretical and Experimental Investigation of SGDBR on Sampled Grating
Dong Lei;Zhang Ruikang;Wang Dingli;Zhang Jing;Chen Lei;Jiang Shan;Zhao Shengzhi;Yu Yonglin;Liu Shuihua

..............page:356-360

An Air-Bridge Inter-Connection Method for Microwave and High Temperature Devices
Lin Ruobing;Wei Wei;Feng Qian;Wang Chong;Hao Yue

..............page:352-355

A New Structural IGBT——an Internal Transparent Collector IGBT and Its Simulation
Wang Hao;Hu Dongqing;Wu Yu;Zhou Wending;Kang Baowei

..............page:348-351

Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer
Cheng Jianbing;Zhang Bo;Li Zhaoji

..............page:344-347

Characteristics of Double-Gate, Dual-Strained-Channel, Fully-Depleted SO1 MOSFETs
Gao Yong;Sun Liwei;Yang Yuan;Liu Jing

..............page:338-343

Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs
Lü Hongliang;Zhang Yimen;Zhang Yuming;Che Yong;Wang Yuehu

..............page:334-337

Performance Improvement of A1GaN/GaN HEMTs by Surface Treatment Prior to Si3N4 Passivation
Li Chengzhan;Liu Dan;Zheng Yingkui;Liu Xinyu;Liu Jian;Wei Ke;He Zhijing

..............page:329-333

Resonant Tunneling Diode Based Stress Measurement
Xiong Jijun;Mao Haiyang;Zhang Wendong;Xue Chenyang

..............page:324-328

Preparation and C2H2 Sensing Characteristics of Sm2O3-Doped SnO2 Gas Sensors
Fan Huitao;Zhang Tong;Qi Qi;Liu Li

..............page:319-323

Binding Energies of Screened Excitons in a Strained (111)-Oriented Zinc-Blende GaN/A1GaN Quantum Well Under Hydrostatic Pressure
Ha Sihua;Ban Shiliang

..............page:234-239

The Bipolar Field-Effect Transistor:IV.Short Channel Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)
Jie Binbin;Sah Chih-Tang

..............page:193-200

A Numerical Method for Calculating Transmission Coefficients Across Arbitrary Potential Barriers with High Accuracy
Ding Wuchang;Xu Xuejun;Cheng Buwen;Zuo Yuhua;Yu Jinzhong;Wang Qiming

..............page:201-205

A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium
Wang Chao;Zhang Yimen;Zhang Yuming;Wang Yuehu;Xu Daqing

..............page:206-209

Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si (111) Substrates
Qin Lixia;Xue Chengshan;Zhuang Huizhao;Yang Zhaozhu;Chen Jinhua;Li Hong

..............page:210-213

On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method
Sun Weifeng;Wu Hong;Shi Longxing;Yi Yangbo;Li Haisong

..............page:214-218

A Novel Capacitive Biaxial Microaccelerometer Based on the Slide-Film Damping Effect
Dong Linxi;Yan Haixia;Qian Xian;Sun Lingling

..............page:219-223

A Programmable 2.4GHz CMOS Multi-Modulus Frequency Divider
Li Zhiqiang;Chen Liqiang;Zhang Jian;Zhang Haiying

..............page:224-228

A Novel SPICE Macro-Model for Power Ics
Zhao Ye;Zhou Yumei;Li Haisong;Sun Weifeng

..............page:229-233

A UHF Balanced Broadband 20W Power Amplifier
Huang Qinghua;Hao Mingli;Wang Yuchen;Zhang Zongnan;Liu Xunchun

..............page:361-365

A 10b 40MS/s,72dB SFDR Pipelined ADC for DTMB Receivers
Yin Xiumei;Wei Qi;Yang Bin;Yang Huazhong

..............page:366-370

A Programmable Assert Threshold Loss-of-Signal Detector for Intelligent Optical Modules
Wang Rong;Wang Zhigong;Xu Jian;Wu Jun;Guan Zhiqiang

..............page:371-375

An Approach to Resisting High-Order Differential Power Analysis Attacks on DES Chips
Li Haijun;Ma Guangsheng;Liu Xiaoxiao

..............page:376-380

EOS Failure Analysis and Die Attach Optimization
Wu Dinghe;Shen Meng;Shao Xuefeng;Yu Hongkun

..............page:381-386

A CMOS Implementation for Radial Basis Function Networks
Liang Yan;Jin Dongming

..............page:387-392

Information for authors

..............page:395-396

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD
Zhou Zhiwen;Cai Zhimeng;Zhang Yong;Cai Kunhuang;Zhou Bi;Lin Guijiang;Wang Jianyuan;Li Cheng;Lai Hongkai;Chen Songyan;Yu Jinzhong;Wang Qiming

..............page:315-318

Effect of Quantum Confinement on Acceptor Binding Energy in Multiple Quantum Wells
Zheng Weimin;Song Shumei;Lü Yingbo;Wang Aifang;Tao Lin

..............page:310-314

Stochastic Analysis of Interconnect Delay in the Presence of Process Variations
Li Xin;Janet M.Wang;Tang Weiqing;Wu Huizhong

..............page:304-309

Low Power Polarity Conversion Based on the Whole Annealing Genetic Algorithm
Wang Pengjun;Lu Jingang;Chen Ken;Xu Jian

..............page:298-303

A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID
Pang Zegui;Zhuang Yiqi;Li Xiaoming;Li Jun

..............page:293-297

A Novel Technique for Improving Temperature Independence of Ring-ADCs
Li Shun;Chen Hua;Zhou Feng

..............page:288-292

A Piecewise Linear Slope Compensation Circuit for DC-DC Converters
Ye Qiang;Lai Xinquan;Li Yanming;Yuan Bing;Chen Fuji

..............page:281-287

A Novel Hybrid DPWM for Digital DC-DC Converters
Chen Hua;Li Shun;Niu Qi;Zhou Feng

..............page:275-280

Design and Analysis of a Gain-Enhanced, Fully Differential Telescopic Operational Transconductance Amplifier
Yao Zhijian;Ma Chengyan;Ye Tianchun;Mo Taishan

..............page:269-274

A 0.5mV High Sensitivity 200Mbps CMOS Limiting Amplifier with RSSI for Optical Receivers
Wang Rong;Wang Zhigong;Xu Jian;Guan Zhiqiang

..............page:262-268

An 80dB Dynamic Range ∑△ Modulator for Low-IF GSM Receivers
Yang Pei;Yin Xiumei;Yang Huazhong

..............page:256-261

Design of a 4.224GHz Quadrature LC-VCO
Li Zhisheng;Li Wei;Li Ning

..............page:251-255

Multiple Node Upset in SEU Hardened Storage Cells
Liu Biwei;Hao Yue;Chen Shuming

..............page:244-250

Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC
Wang Chao;Zhang Yimen;Zhang Yuming;Wang Yuehu;Xu Daqing

..............page:240-243