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Chinese Journal of Semiconductors
0253-4177
2008 Issue 11
Design of an Active-RC Low-Pass Filter with Accurate Tuning Architecture
Chen Fangxiong 1;Lin Min2;Chen Bei1;Jia Hailong1;Shi Yin1;and Dai Forster3
..............page:2238-2244
A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness
Ge Ji;Jin Zhi Liu Xinyu;Cheng Wei;Wang Xiantai;Chen Gaopeng;and Wu Dexin
..............page:2270-2274
A Ku Band 30W Pulsed Microwave Power Amplifier Module
Chen Gaopeng Chen Xiaojuan;Liu Xinyu;and Li Bin
..............page:2281-2285
Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding
Lao Yanfeng Cao Chunfang;Wu Huizhen;Cao Meng;Liu Cheng;Xie Zhengsheng;and Gong Qian
..............page:2286-2291
Photoluminescence Properties of ZnO Nanorods Prepared Under Low Temperature
Lang Jihui1;2;Yang Jinghai1;2;Li Changsheng1;Han Qiang2;Yang Lili2;Wa ng Dandan3;4;Gao Ming2;and Liu Xiaoyan2
..............page:2260-2264
Information for authors
..............page:2295
External Quantum Efficiency of Quantum Well Solar Cells
Lou Chaogang1;Yan Ting1;Sun Qiang2;Xu Jun2;Zhang Xiaobing1;and Lei Wei1
..............page:2088-2091
A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe
Song Jiayou1;2;Wang Zhigong1;and Peng Yanjun1
..............page:2101-2105
A 3GHz Low-Power and Low-Phase-Noise LC VCO with a Self-Biasing Current Source
Chen Pufeng Li Zhiqiang;Huang Shuilong;Zhang Haiying;and Ye Tianchun
..............page:2106-2109
Microfabrication and Evaluation of a Silicon Microelectrode Based on SOI Wafer
Sui Xiaohong1;and Chen Hongda2
..............page:2169-2174
Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0.18μm Mixed Mode RFCMOS Technology
Zhu Kehan1;2;3Yu Zongguang1;2;Dong Shurong3and Han Yan3
..............page:2164-2168
Design of a Polymer Directional Coupler Electro-Optic Switch with Low Push-Pull Switching Voltage at 1550nm
Zheng Chuantao;Ma Chunsheng Yan Xin;Wang Xianyin;and Zhang Daming
..............page:2197-2203
A Sacrificial Layer Etching Method Applied in Surface Micromachining Using Agitated BHF and Glycerol Solution
Wang Xiaoning;Yang Zhenchuan;and Yan Guizhen
..............page:2175-2179
Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS
Li Zehong Wu Lijuan;Zhang Bo;and Li Zhaoji
..............page:2153-2157
Intensity Noise Suppression of an FP Laser by External Injection Locking
Ren Min Han Wei;Xie Liang;Chen Wei;Zhang Yan;Ju Yu;Zhang Hongguang;Zhang Banghong;and Zhu Ninghua
..............page:2192-2196
Back-Gate Effect of SOI LDMOSFETs
Bi Jinshun Song Limei;Hai Chaohe;and Han Zhengsheng
..............page:2148-2152
Modeling of High-Voltage LDMOS for PDP Driver ICs
Li Haisong Sun Weifeng;Yi Yangbo;and Shi Longxing
..............page:2110-2114
The Microstructure Evolution of Intrinsic Microcrystalline Silicon Films and Its Influence on the Photovoltaic Performance of Thin-Film Silicon Solar Cells
Yuan Yujie1;2;3Hou Guofu1;2;3Zhang Jianjun1;2;3Xue Junming1;2;3 Zhao Ying1;2;3and Geng Xinhua1;2;3
..............page:2125-2129
Design of a Dedicated Reconfigurable Multiplier in an FPGA
Yu HongminChen Stanley L;and Liu Zhongli
..............page:2218-2225
Exciton Recombination in the Coupling Structure of a ZnCdSe Quantum Well and CdSe Quantum Dots
Jin Hua1;Bu Fanliang1;Li Lihua1;Wang Rong1;Zhang Zhenzhong2;Zhang Ligong2;Zheng Zhuhong2;and Shen Dezhen2
..............page:2252-2255
The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots
Liang Zhimei Wu Ju;Jin Peng;Lü Xueqin;and Wang Zhanguo
..............page:2121-2124
Room Temperature Ferromagnetism in Nanostructure Cu-Doped ZnO
Liu Huilian1;2;3Yang Jinghai1;3Zhang Yongjun3Wang Yaxin3Wei Maobin3 and Zhao Liyou3
..............page:2256-2259
Ohmic Contact Property of Ti/Al/Ni/Au on AlGaN/GaN Heterostructures for Application in Ultraviolet Detectors
Zhang Junqin Yang Yintang;Chai Changchun;Li Yuejin;and Jia Hujun
..............page:2187-2191
Total Ionizing Dose Radiation Effects of RF PDSOI LDMOS Transistors
Liu Mengxin;Han Zhengsheng Bi Jinshun;Fan Xuemei;Liu Gang;Du Huan;and Song Limei
..............page:2158-2163
Effect of Width Ratio on the Etching Behavior of Joint Channel Structure
Wu Changju Jin Zhonghe;and Wang Yuelin
..............page:2180-2186
Deposition of p-Type Microcrystalline Silicon Film and Its Application in Microcrystalline Silicon Solar Cells
Chen Yongsheng1;2;Yang Shi’e1;Wang Jianhua3Lu Jingxiao1;Gao Xiaoyong1;Gu Jinhua1;Zheng Wen1;and Zhao Shangli1
..............page:2130-2135
Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD
Ma Tieying1;2;Li Tie2;Liu Wenping2;and Wang Yuelin2
..............page:2265-2269
Photoluminescence of the Beryllium Acceptor at the Centre of Quantum Wells
Zheng Weimin Li Sumei;Lü Yingbo;Wang Aifang;and Wu Ailing
..............page:2115-2120
tou gao xu zhi
..............page:2294
Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation
Sun Ling1;2;3Liu Wei2;Duan Zhenyong2;Xu Zhongyi2;and Yang Huayue2
..............page:2143-2147
An Integrated Power Management Unit for a Battery-Operated Wireless Endoscopic System
Chen Xinkai1;Jiang Hanjun2;and Wang Zhihua2
..............page:2245-2251
A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer
Jin Boshi Wu Qun;Yang Guohui;Meng Fanyi;and Fu Jiahui
..............page:2204-2208
Development and Analysis of an RF Film Bulk Acoustic Resonator
Tang Liang Li Junhong;Hao Zhenhong;and Qiao Donghai
..............page:2226-2231
A 3V 5.88mW 13b 400kHz Sigma-Delta Modulator with 84dB Dynamic Range
Li Zhuo and Yang Huazhong
..............page:2232-2237
A CMOS Flyback PWM Controller with Low No-Load Power Consumption
Zhu Zhangming and Yang Yintang
..............page:2275-2280
Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress
Hu Shigang Hao Yue;Ma Xiaohua;Cao Yanrong;Chen Chi;and Wu Xiaofeng
..............page:2136-2142
An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band
Chen Yanhu1;Shen Huajun2;Wang Xiantai2;Chen Gaopeng2;Liu Xinyu2;Yuan Dongfeng1;and Wang Zuqiang1
..............page:2098-2100
A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs
He Jin1;2;Zhang Lining2;Zhang Jian2;Fu Yue2;Zheng Rui2;and Zhang Xing1;2
..............page:2092-2097