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Chinese Journal of Semiconductors
0253-4177
2007 Issue 8
Information for authors
..............page:插1,1332
Kriging Metamodel Based on Genetic Algorithms and Its Application in Analog IC Optimization
You Hailong;Jia Xinzhang;Wang Shaoxi
..............page:1325-1329
New Modeling and Optimization Method Suitable for UDSM Lithography Simulation
Shen Shanhu;Shi Zheng;Xie Chunlei;Yan Xiaolang
..............page:1320-1324
A Low Power,Large Dynamic Range 915MHz Passive RFID Tag
Bai Rongrong;Li Yongming;Zhang Chun;Wang Zhihua
..............page:1316-1319
Influence of ITO Surface Treatment on Performance of Organic Light-Emitting Devices
Wang Jing;Jiang Wenlong;Wang Guangde;Wang Lizhong;Wang Jin;Han Qiang;Ding Guiying;Liu Shiyong
..............page:1312-1315
Effect of Annealing Temperature on Amorphous Semiconductor As2S8 Film Waveguide
Zou Liner;Chen Baoxue;Du Liping;Liu Xiaoqing;Hamanaka H;Iso M
..............page:1307-1311
MEMS Shocking-Acceleration Switch with Threshold Modulating and On-State Latching Function
Jia Mengjun;Li Xinxin;Song Zhaohui;Wang Yuelin
..............page:1295-1301
Temperature-Dependent 4H-SiC MOSFET Channel-Electron Mobility Model for Circuit Simulation
Dai Zhenqing;Yang Ruixia;Yang Kewu
..............page:1252-1255
Effects of Different Collector Current Biases on γ Radiation Response of npn-BJT
Cheng Xinghua;Wang Jian'an;Gong Min;Shi Ruiying;Pu Lin;Liu Luncai;Guo Feng;Yang Chen
..............page:1248-1251
MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE
Bi Zhen;Zhang Jingwen;Bian Xuming;Wang Dong;Zhang Xin'an;Hou Xun
..............page:1242-1247
Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain
Xu Bojuan;Du Gang;Xia Zhiliang;Zeng Lang;Han Ruqi;Liu Xiaoyan
..............page:1179-1183
Influence of Substrate Temperature and Nitrogen Gas on Zinc Nitride Thin Films Prepared by RF Reactive Sputtering
Zhang Jun;Xie Erqing;Fu Yujun;Li Hui;Shao Lexi
..............page:1173-1178
Storage Characteristics of Nano-Crystal Si Devices Using Different Measurements for MOS Capacitors
Li Wei;Zhang Zhigang;Liang Renrong;He Yang;Wang Liudi;Zhu Jun
..............page:1169-1172
Research and Design of Wide Input Common-Mode Range Current-Sense Amplifier
Jiang Li;Wu Xiaobo;Yan Xiaolang
..............page:1289-1294
A Low Voltage Low Power CMOS 5Gb/s Transceiver
Sun Yehui;Jiang Lixin;Qin Shicai
..............page:1283-1288
A 0.13μm Mixed-Signal CMOS High Speed USB 2.0 Transceiver
Wang Junsong;Zhu Xiaoting;Li Weinan;Hong Zhiliang
..............page:1278-1282
pH Sensor Realized with Standard CMOS Process
Shi Zhaoxia;Zhu Dazhong
..............page:1272-1277
Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure
Duan Baoxing;Huang Yongguang;Zhang Bo;Li Zhaoji
..............page:1262-1266
Organic Electroluminescent Characteristics of Compound PS:NPB Hole Transporting Layer
Suo Fan;Yu Junsheng;Deng Jing;Lou Shuangling;Jiang Yadong
..............page:1232-1236
Strain and Annealing Effect of SiGe/Si Heterostructure in Limited Area Grown by MBE
Yang Hongbin;Fan Yongliang;Zhang Xiangjiu
..............page:1226-1231
Improvement of Surface Morphology of RF MBE Grown(0001)GaN via In-Protected Growth Interruption Modulation
Zhong Fei;Qiu Kai;Li Xinhua;Yin Zhijun;Ji Changjian;Han Qifeng;Cao Xiancun;Chen Jiarong;Duan Chenghong;Zhou Xiuju;Wang Yuqi
..............page:1221-1225
Effects of Nitrogen Substitutional Doping on the Nonequilibrium Electronic Transportation of Single Wall Carbon Nanotubes
Wei Jianwei;Hu Huifang;Zeng Hui;Wang Zhiyong;Wang Lei;Zhang Lijuan
..............page:1216-1220
Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane
Xie Bin;Xue Chenyang;Zhang Wendong;Xiong Jijun;Zhang Binzhen
..............page:1211-1215
A 16bit 96kHz Chopper-Stabilized Sigma-Delta ADC
Cao Ying;Ren Tenglong;Hong Zhiliang
..............page:1204-1210
Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process
Yu Changliang;Mao Luhong;Song Ruiliang;Zhu Haobo;Wang Rui;Wang Qian
..............page:1198-1203
Improvements on High Current Performance of Static Induction Transistor
Wang Yongshun;Wu Rong;Liu Chunjuan;Li Siyuan
..............page:1192-1197
Influence of Coulomb Potential on the Properties of a Polaron in a Quantum Dot
Li Weiping;Xiao Jinglin
..............page:1187-1191
Total Dose Radiation Hardened PDSOI CMOS 64k SRAMs
Guo Tianlei;Zhao Fazhan;Liu Gang;Li Duoli;Li Jing;Zhao Lixin;Zhou Xiaoyin;Hai Chaohe;Han Zhengsheng
..............page:1184-1186