Chinese Journal of Semiconductors 2007 Issue 6 High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN

High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN
Zhang Yuezong;Feng Shiwei;Zhang Gongchang;Wang Chengdong;Lü Changzhi

..............page:984-988

Two-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher
Cheng Jia;Zhu Yu;Wang Jinsong

..............page:989-994

Finite Element Simulation and Process Optimization of Localized Laser Bonding
Ma Ziwen;Tang Zirong;Liao Guanglan;Shi Tielin;Nie Lei;Zhou Ping

..............page:995-1000

Information for authors

..............page:插1,1003

Real-Time and On-Line Measurement of Junction Temperature for Semiconductor Power Devices
Zhu Yangjun;Miao Qinghai;Zhang Xinghua;Yang Lieyong;Lu Shuojin

..............page:980-983

Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets
Liu Yong;Nie Yuhong;Yao Shouguang

..............page:913-917

Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy
Yin Zhijun;Zhong Fei;Qiu Kai;Li Xinhua;Wang Yuqi

..............page:909-912

Growth of GaN Thick Film by HVPE on Sapphire Substrate
Ma Ping;Wei Tongbo;Duan Ruifei;Wang Junxi;Li Jinmin;Zeng Yiping

..............page:902-908

Growth of PbI2 Crystal with Excessive Pb and Its Characterization
Zhu Xinghua;Zhao Beijun;Zhu Shifu;Jin Yingrong;Xiang Anping;Wei Zhaorong

..............page:898-901

Research on Optimizing Barrier Material for AlInGaN Quantum Wells
Wen Feng;Liu Deming;Huang Lirong

..............page:893-897

Synthesis and Photoluminescence Properties of Dy-Doped ZnO Nanocrystals
Zhang Linli;Guo Changxin

..............page:887-892

Effect of Growth-Preferred Orientation on the Photoelectric Properties of ITO Thin Film
Chen Yao;Zhou Yuqin;Zhang Qunfang;Zhu Meifang;Liu Fengzhen;Liu Jinlong;Chen Nuofu

..............page:883-886

Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN
Su Zhiguo;Xu Jintong;Chen Jun;Li Xiangyang;Liu Ji;Zhao Degang

..............page:878-882

Physical Mechanism of the Built-In Electric Field for SiGe HBT with Heavy p-Doping
Zhao Chuanzhen;Tang Jiyu;Wen Yuhua;Wu Liangzhen;Kong Yunting

..............page:873-877

Control of Vapor Transport Process of Large Size ZnO Single Crystal Growth
Wei Xuecheng;Zhao Youwen;Dong Zhiyuan;Li Jinmin

..............page:869-872

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer
Cui Can;Yang Deren;Ma Xiangyang

..............page:865-868

Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys
Xiong Deping;Ren Xiaomin;Wang Qi;Shu Wei;Zhou Jing;Lü Jihe;Huang Hui;Huang Yongqing

..............page:860-864

Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells
Liu Linsheng;Liu Su;Wang Wenxin;Zhao Hongming;Liu Baoli;Gao Hanchao;Jiang Zhongwei;Wang Jia;Huang Qing'an;Chen Hong;Zhou Junming

..............page:856-859

Influence of Polaronic Effect on Binding Energies of Donors in Quantum Wells with Finite Barriers Under Hydrostatic Pressure
Wen Shumin;Ban Shiliang

..............page:848-855

Threshold Voltage Model for a Fully Depleted SOI-MOSFET with a Non-Uniform Profile
Zhang Guohe;Shao Zhibiao;Zhou Kai

..............page:842-847

Delayed-Dipole Domain Mode of Semi-Insulating GaAs Photoconductive Semiconductor Switches
Tian Liqiang;Shi Wei

..............page:819-822

A Monolithic InGaP/GaAs HBT VCO for 5GHz Wireless Applications
Chen Liqiang;Zhang Jian;Li Zhiqiang;Chen Pufeng;Zhang Haiying

..............page:823-828

Broadband MMIC Power Amplifier for C-X-Ku-Band Applications
Zhang Shujing;Yang Ruixia;Zhang Yuqing;Gao Xuebang;Yang Kewu

..............page:829-832

A Novel Digital Transceiver for CT0 Standard
Chen Dianyu;Xu Changxi;Chen Haoqiong;Li Zhen;Guo Xiuli;Hui Zhiqiang;Shi Peng;Wang Yue;Wu Yue;Xiong Shaozhen

..............page:833-841

Design of Low Power,High PSRR Voltage Reference
Ying Jianhua;Chen Jia;Wang Jie

..............page:975-979

Design and Implementation of a High-Resolution Hybrid DPWM
Zhou Xi;Guo Jianmin;Li Wenhong

..............page:967-974

X-Band Low Noise Amplifier Module
Hao Mingli;Liu Xunchun;Huang Qinghua;Yang Chengyue;Wu Jin

..............page:963-966

Influence of Background Radiation on a Medium-Wave HgCdTe Photoconductive Detector with Overlap Structure
Zhang Yan;Fang Jiaxiong;Xu Guosen

..............page:958-962

Concept and Simulation of a Novel Pre-Equalized CMOS Optoelectronic Integrated Receiver
Yu Changliang;Mao Luhong;Zhu Haobo;Song Ruiliang;Chen Mingyi;Wang Qian;Wang Rui

..............page:951-957

Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors
Zhou Jianjun;Jiang Ruolian;Ji Xiaoli;Xie Zili;Han Ping;Zhang Rong;Zheng Youdou

..............page:947-950

Design of InGaAsP Composite Collector for InP DHBT
Cheng Wei;Jin Zhi;Yu Jinyong;Liu Xinyu

..............page:943-946

Thermal Safety of Switching Operation of LDMOS Under Different Frequencies
Li Meizhi;Chen Xingbi

..............page:938-942

Physical Model and Numerical Algorithm Realization for RSD
Deng Linfeng;Yu Yuehui;Peng Yabin;Zhou Yuming;Liang Lin;Wang Lu

..............page:931-937

Planar Split Dual Gate MOSFET: Fabrication, Design, and Layout
Xiao Deyuan;Chen Guoqing;Li Ruojia;Lu Pusheng;Chen Liangcheng;Liu Yong;Shen Qichang

..............page:923-930

A Novel Structure for a Static Induction Transistor
Tang Ying;Liu Su;Li Siyuan;Wu Rong;Chang Peng

..............page:918-922