0253-4177
2007 Issue 3
..............page:472
Criterion of Microroughness for Self-Propagating Wafer Bonding
Ma Ziwen;Tang Zirong;Liao Guanglan;Shi Tielin
Ma Ziwen;Tang Zirong;Liao Guanglan;Shi Tielin
..............page:465-469
2.5Gbps/ch 2-Channel Parallel Clock and Data Recovery Circuit
Liu Yongwang;Wang Zhigong;Li Wei
Liu Yongwang;Wang Zhigong;Li Wei
..............page:460-464
A High Performance Low Power 10bit 30MS/s Pipelined ADC
Xie Lei;Li Jian;Deng Huan;Zeng Xiaoyang;Guo Yawei
Xie Lei;Li Jian;Deng Huan;Zeng Xiaoyang;Guo Yawei
..............page:453-459
Application of "Flow-Graph" Technique in Measurement Calibration of High Frequency Characteristics of Photodetectors
Miao Ang;Huang Yongqing;Li Yiqun;Wu Qiang;Huang Hui;Ren Xiaomin
Miao Ang;Huang Yongqing;Li Yiqun;Wu Qiang;Huang Hui;Ren Xiaomin
..............page:448-452
Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method
He Guorong;Zheng Wanhua;Qu Hongwei;Yang Guohua;Wang Qing;Wu Xuming;Cao Yulian;Chen Lianghui
He Guorong;Zheng Wanhua;Qu Hongwei;Yang Guohua;Wang Qing;Wu Xuming;Cao Yulian;Chen Lianghui
..............page:444-447
Large Signal Modeling of GaAs HFET/PHEMT
Zhang Shujing;Yang Ruixia;Gao Xuebang;Yang Kewu
Zhang Shujing;Yang Ruixia;Gao Xuebang;Yang Kewu
..............page:439-443
Mo/Schottky Barrier Diodes on 4H-Silicon Carbide
Zhang Fasheng;Li Xinran
Zhang Fasheng;Li Xinran
..............page:435-438
Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material
Li Feng;Gu Shulin;Ye Jiandong;Zhu Shunming;Zhang Rong;Zheng Youdou
Li Feng;Gu Shulin;Ye Jiandong;Zhu Shunming;Zhang Rong;Zheng Youdou
..............page:430-434
Deposition of Al-N Co-Doped p-Type Zn0.95Mg0.05O Thin Films
Jian Zhongxiang;Ye Zhizhen;Gao Guohua;Lu Yangfan;Zhao Binghui;Zeng Yujia;Zhu Liping
Jian Zhongxiang;Ye Zhizhen;Gao Guohua;Lu Yangfan;Zhao Binghui;Zeng Yujia;Zhu Liping
..............page:425-429
Thermal Conductivity of Meso-Porous Silicon Prepared by the Double-Tank Electrochemical Corrosion Method
Fang Zhenqian;Hu Ming;Zhang Wei;Zhang Xurui;Yang Haibo
Fang Zhenqian;Hu Ming;Zhang Wei;Zhang Xurui;Yang Haibo
..............page:420-424
XPS of SiCN Thin Films Prepared by C+ Implantation in Amorphous SiNx:H
Chen Chao;Liu Yuzhen;Dong Lijun;Chen Dapeng;Wang Xiaobo
Chen Chao;Liu Yuzhen;Dong Lijun;Chen Dapeng;Wang Xiaobo
..............page:415-419
Study on the Interaction Potential of CdSe
Song Genzong;Zhang Duo;Liu Bin
Song Genzong;Zhang Duo;Liu Bin
..............page:410-414
Dynamic Behavior of Excitons in Coupled Double Quantum Dots Driven by DC-AC Electric Fields
Su Xiyu;Quan Xiumei;Guo Dejun
Su Xiyu;Quan Xiumei;Guo Dejun
..............page:404-409
An AND-LUT Based Hybrid FPGA Architecture
Chen Liguang;Lai Jinmei;Tong Jiarong
Chen Liguang;Lai Jinmei;Tong Jiarong
..............page:398-403
Low-Power CMOS IC for Function Electrical Stimulation of Nerves
Li Wenyuan;Wang Zhigong;Zhang Zhenyu
Li Wenyuan;Wang Zhigong;Zhang Zhenyu
..............page:393-397
Two-Stage Driving Circuit for One-Chip TFT-LCD Driver IC
Gao Wu;Wei Tingcun;Gao Deyuan
Gao Wu;Wei Tingcun;Gao Deyuan
..............page:385-392
An Analog Equalizer and Baseline-Wander Canceller for 100/1000Base-TX Transceiver
Chen Haoqiong;Li Xuechu;Xu Changxi;Niu Wencheng
Chen Haoqiong;Li Xuechu;Xu Changxi;Niu Wencheng
..............page:377-384
A Highly Linear Filter and VGA with DC-Offset Correction for GSM/WCDMA Receivers
Zhou Zhujin;Li Zhisheng;Li Ning;Li Wei;Ren Junyan
Zhou Zhujin;Li Zhisheng;Li Ning;Li Wei;Ren Junyan
..............page:372-376
A Fast Acquisition PLL with Wide Tuning Range
Ge Yan;Jia Song;Ye Hongfei;Ji Lijiu
Ge Yan;Jia Song;Ye Hongfei;Ji Lijiu
..............page:365-371
Abstraction of Small Signal Equivalent Circuit Parameters of Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT
Xu Jingbo;Yin Junjian;Zhang Haiying;Li Xiao;Liu Liang;Ye Tianchun
Xu Jingbo;Yin Junjian;Zhang Haiying;Li Xiao;Liu Liang;Ye Tianchun
..............page:361-364
Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial n-Buried Layer
Chen Wanjun;Zhang Bo;Li Zhaoji
Chen Wanjun;Zhang Bo;Li Zhaoji
..............page:355-360
Effect of Snapback Stress on Gate Oxide Integrity of nMOSFET in 90nm Technology
Zhu Zhiwei;Hao Yue;Ma Xiaohua
Zhu Zhiwei;Hao Yue;Ma Xiaohua
..............page:349-354
A Novel Ideal Ohmic Contact SiGeC/Si Power Diode with Graded Doping Concentration
Liu Jing;Gao Yong;Yang Yuan;Wang Cailin
Liu Jing;Gao Yong;Yang Yuan;Wang Cailin
..............page:342-348
A Novel Low Power ASK Receiver with AGC Loop
Yao Jinke;Chi Baoyong;Wang Zhihua
Yao Jinke;Chi Baoyong;Wang Zhihua
..............page:337-341
A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
Dai Yang;Huang Yinglong;Liu Wei;Ma Long;Yang Fuhua;Wang Liangchen;Zeng Yiping;Zheng Houzhi
Dai Yang;Huang Yinglong;Liu Wei;Ma Long;Yang Fuhua;Wang Liangchen;Zeng Yiping;Zheng Houzhi
..............page:332-336
Dual Material Gate SOI MOSFET with a Single Halo
Li Zunchao;Jiang Yaolin;Wu Jianmin
Li Zunchao;Jiang Yaolin;Wu Jianmin
..............page:327-331
Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials
Yang Hui;Zhang Enxia;Zhang Zhengxuan
Yang Hui;Zhang Enxia;Zhang Zhengxuan
..............page:323-326
Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique
Zhang Jianjun;Hu Zengxin;Gu Shibin;Zhao Ying;Geng Xinhua
Zhang Jianjun;Hu Zengxin;Gu Shibin;Zhao Ying;Geng Xinhua
..............page:317-322