Chinese Journal of Semiconductors 2007 Issue 12 Information for authors

..............page:2050-2051

Modeling the Effects of Adhesion Force on the Molecular-Scale Removal Mechanism in the Chemical Mechanical Polishing of Wafer
Wang Yongguang;Zhao Yongwu

..............page:2018-2022

Simulation of the Diffraction Effect in Exposure on a SU-8 Photoresist and the Glycerol Compensated Method
Zhu Zhen;Huang Qing'an;Li Weihua;Zhou Zaifa;Feng Ming

..............page:2011-2017

Fabrication of High-Density Transmission Gratings for X-Ray Diffraction
Zhu Xiaoli;Ma Jie;Cao Leifeng;Yang Jiamin;Xie Changqing;Liu Ming;Chen Baoqin;Niu Jiebin;Zhang Qingzhao;Jiang Ji;Zhao Min;Ye Tianchun

..............page:2006-2010

A Correlation Analysis Approach Based Fault Diagnosis of Analog VLSI Circuits
Xie Yongle

..............page:1999-2005

A High-Performance Fully Differential Charge Pump for Frequency Synthesizer Applications
Yang Zhenyu;Tang Zhangwen;Min Hao

..............page:1993-1998

A Charge Pump Design for Low-Spur PLL
Xue Hong;Li Zhiqun;Wang Zhigong;Li Wei;Zhang Li

..............page:1988-1992

A Design for Triple-Valued NAND and NOR Gates Based on Resonant Tunneling Devices
Lin Mi;Lü Weifeng;Sun Lingling

..............page:1983-1987

A Multi-Scale Model for Load-Deflection of Si Nanobeams
Bao Fang;Yu Hong;Lu Qingru;Huang Qing'an

..............page:1979-1982

Silicon Temperature Sensor with Inaccuracy of ±0.3℃ from -55 to 125℃
Feng Xiaoxing;Wang Xin'an;Feng Jun;Ge Binjie;Zhang Xing

..............page:1972-1978

Design of a Wideband CMOS Variable Gain Amplifier
Guo Feng;Li Zhiqun;Chen Dongdong;Li Haisong;Wang Zhigong

..............page:1967-1971

Analysis and Performance of a Smart,High-Voltage SENSFET
Li Zehong;Wang Xiaosong;Wang Yiming;Yi Kun;Zhang Bo;Li Zhaoji

..............page:1961-1966

An AlGaN-Based Resonant-Cavity-Enhanced p-I-n Ultraviolet Photodetector
Ji Xiaoli;Jiang Ruolian;Zhou Jianjun;Liu Bin;Xie Zili;Han Ping;Zhang Rong;Zheng Youdou;Gong Haimei

..............page:1957-1960

Influence of an Omni-Directional Reflector on the Luminous Efficiency of AlGaInP Light-Emitting Diodes
Sun Hao;Han Jun;Li Jianjun;Deng Jun;Zou Deshu;Song Xiaowei;Song Xinyuan;Shen Guangdi

..............page:1952-1956

A 5.1W/mm Power Density GaN HEMT on Si Substrate
Feng Zhihong;Yin Jiayun;Yuan Fengpo;Liu Bo;Liang Dong;Mo Jianghui;Zhang Zhiguo;Wang Yong;Feng Zhen;Li Xiaobai;Yang Kewu;Cai Shujun

..............page:1949-1951

Fabrication of a High-Performance RTD on InP Substrate
Qi Haitao;Feng Zhen;Li Yali;Zhang Xiongwen;Shang Yaohui;Guo Weilian

..............page:1945-1948

J-V Characteristics of Cu(In1-xGax)Se2 Thin Film Solar Cells
He Weiyu;Sun Yun;Qiao Zaixiang;Ao Jianping;Wang Xinglei;Li Changjian

..............page:1941-1944

Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation
Cai Kunhuang;Zhang Yong;Li Cheng;Lai Hongkai;Chen Songyan

..............page:1937-1940

Low Jitter,Dual-Modulus Prescalers for RF Receivers
Tang Lu;Wang Zhigong;He Xiaohu;Li Zhiqun;Xu Yong;Li Wei;Guo Feng

..............page:1930-1936

A Low-Power-Consumption 9bit 10MS/s Pipeline ADC for CMOS Image Sensors
Zhu Tiancheng;Yao Suying;Li Binqiao

..............page:1924-1929

A New Poly-Si TFTs DC Model for Device Characterization and Circuit Simulation
Deng Wanling;Zheng Xueren;Chen Rongsheng

..............page:1916-1923

1.3μm AlInGaAs Strained Single Quantum Well Laser Diodes with High Characteristic Temperature of 200K
Wang Yuxia;Liu Chunling;Lu Peng;Wang Yong;Qu Yi;Liu Guojun

..............page:1912-1915

A 10Gb/s GaAs PHEMT High Gain Preamplifier for Optical Receivers
Jiao Shilong;Yang Xianming;Zhao Liang;Li Hui;Chen Zhenlong;Chen Tangsheng;Shao Kai;Ye Yutang

..............page:1902-1911

Surface Phonon-Polaritons in Slabs of Ternary Mixed Crystals
Bao Jin;Liang Xixia

..............page:1895-1901

Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems
Zhang Jinmin;Xie Quan;Zeng Wuxian;Liang Yan;Zhang Yong;Yu Ping;Tian Hua

..............page:1888-1894

Influence of the Interaction Between Phonons and Coulomb Potential on the Properties of a Bound Polaron in a Quantum Dot
Yin Jiwen;Yu Yifu;Xiao Jinglin

..............page:1883-1887

Small-Signal Equivalent Circuit Modeling of a Photodetector Chip
Miao Ang;Li Yiqun;Wu Qiang;Cui Hailin;Huang Yongqing;Huang Hui;Ren Xiaomin

..............page:1878-1882

Analysis and Design of a High-Stability,High-Accuracy,Low-Dropout Voltage Regulator
Shen Liangguo;Yan Zushu;Wang Zhao;Zhang Xing;Zhao Yuanfu

..............page:1872-1877

A 4～12GHz Wideband Balanced MIC Power Amplifier
Yao Xiaojiang;Li Bin;Liu Xinyu;Chen Zhongzi;Chen Xiaojuan

..............page:1868-1871

Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48As HEMTs with 218GHz Cutoff Frequency
Liu Liang;Zhang Haiying;Yin Junjian;Li Xiao;Xu Jingbo;Song Yuzhu;Niu Jiebin;Liu Xunchun

..............page:1864-1867

In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz
Liu Liang;Zhang Haiying;Yin Junjian;Li Xiao;Yang Hao;Xu Jingbo;Song Yuzhu;Zhang Jian;Niu Jiebin;Liu Xunchun

..............page:1860-1863

The Bipolar Field-Effect Transistor:Ⅱ.Drift-Diffusion Current Theory (Two-MOS-Gates on Pure-Base)
Chih-Tang Sah;Bin B. Jie

..............page:1849-1859