Chinese Journal of Semiconductors 2007 Issue 11 A Three-Stage Operational Amplifier for a Wide Range of Capacitive Loads

A Three-Stage Operational Amplifier for a Wide Range of Capacitive Loads
Hu Jingjing;Huijsing J H;Ren Junyan

..............page:1685-1689

A Low-Voltage,Low-Power CMOS High Dynamic Range dB-Linear VGA for Super Heterodyne Receivers
Dong Qiao;Geng Li;Shao Zhibiao

..............page:1690-1695

Cost-Effective VDMOS and Compatible Process for PDP Scan-Driver IC
Li Xiaoming;Zhuang Yiqi;Zhang Li;Xin Weiping

..............page:1679-1684

GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz
Hao Yue;Yue Yuanzheng;Feng Qian;Zhang Jincheng;Ma Xiaohua;Ni Jinyu

..............page:1674-1678

The Bipolar Field-Effect Transistor: I. Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)
Chih-Tang Sah;Bin B.Jie

..............page:1661-1673

Information for authors

..............page:1846-1847

A Low Noise, Low Power Fully Digitally Controlled LC Oscillator for PHS Transceivers
Wang Shaohua;Yu Guangming;Liu Yongpan;Yang Huazhong

..............page:1836-1843

Design of a 2D Thermal Wind Sensor Based on MEMS Process
Shen Guangping;Wu Jian;Zhang Hua;Qin Ming;Huang Qing'an

..............page:1830-1835

Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching
Jiang Hai;Lü Jian;Xu Jianhua;Jiang Yadong

..............page:1824-1829

A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies
Wang Jinhui;Gong Na;Feng Shoubo;Duan Liying;Hou Ligang;Wu Wuchen;Dong Limin

..............page:1818-1823

Direct Bonding of n-GaAs and p-GaN Wafers
Li Hui;He Guorong;Qu Hongwei;Shi Yan;Chong Ming;Cao Yulian;Chen Lianghui

..............page:1815-1817

Effects of Surface Treatments on Ohmic Contact to p-GaN
Guo Debo;Liang Meng;Fan Manning;Shi Hongwei;Liu Zhiqiang;Wang Guohong;Wang Liangchen

..............page:1811-1814

A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer
Lü Jihe;Huang Hui;Ren Xiaomin;Miao Ang;Li Yiqun;Wang Rui;Huang Yongqing;Wang Qi

..............page:1807-1810

Densely Packed High Power VCSEL Arrays
Wang Qing;Cao Yulian;He Guorong;Wei Xin;Qu Hongwei;Song Guofeng;Ma Wenquan;Chen Lianghui

..............page:1803-1806

A New Model Library Approach to Extract VLSI Interconnect Capacitance
Zhao Peng;Zhang Jie;Chen Kangsheng;Wang Haogang

..............page:1794-1802

RF-SOI Modeling:An Accuracy Body-Contact RF-LDMOSFET Large-Signal Model
Liu Jun;Sun Lingling;Li Wenjun;Zhong Wenhua;Wu Yanming;He Jia

..............page:1786-1793

Electrical Properties of a PZT Ferroelectric Field Effect Transistor
Cai Daolin;Li Ping;Zhai Yahong;Zhang Shuren

..............page:1782-1785

Effect of Plasma Dry Etching on Gate Leakage of Recessed AlGaN/GaN HEMTs
Li Chengzhan;Pang Lei;Liu Xinyu;Huang Jun;Liu Jian;Zheng Yingkui;He Zhijing

..............page:1777-1781

A Recessed AlGaN/GaN HEMT with High Output Power in the X Band
Feng Zhen;Zhang Zhiguo;Wang Yong;Mo Jianghui;Song Jianbo;Feng Zhihong;Cai Shujun;Yang Kewu

..............page:1773-1776

Microwave Photoconductivity Decay(μ-PCD)Characterization and Mechanism of p+ -InP/n-InGaAs/n-InP Double Heterojunction Material
Wu Xiaoli;Wang Nili;Zhang Kefeng;Tang Hengjing;Huang Yimin;Han Bing;Li Xue;Gong Haimei

..............page:1769-1772

Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy
Sun Hao;Qi Ming;Xu Anhuai;Ai Likun;Zhu Fuying

..............page:1765-1768

Optical Properties of InN Films Grown by MOCVD
Kong Jieying;Zhang Rong;Liu Bin;Xie Zili;Zhang Yong;Xiu Xiangqian;Zheng Youdou

..............page:1761-1764

A Study of ZnO/Si(111)Interface Structure by Synchrotron Radiation X-Ray Grazing Incident Diffraction
Zhao Chaoyang;Li Ruipeng;Sun Bai;Xu Pengshou;Zhang Guobin;Pan Guoqiang

..............page:1756-1760

Molecular Dynamic Simulation of the Interaction Between a Low Energy Bombarding Si Atoms and the Si(001)2×1 Reconstructed Surface
Zhu Linshan;Jin Shisheng;Gou Fujun;Xie Quan

..............page:1748-1755

A High Voltage BCD Process Using Thin Epitaxial Technology
qiao ming; qiao ming ; xiao zhi qiang ; fang jian ; zheng xin ; zhou xian da ; xu jing ; he zhong bo ; duan ming wei ; zhang bo ; li zhao ji

..............page:1742-1747

A Novel Multi-Stage Interpolation Filter Design Technique for High-Resolution ∑-△ DAC
Chen Run;Liu Liyuan;Li Dongmei

..............page:1735-1741

Quasi-Static Energy Recovery Logic with Single Power-Clock Supply
Li Shun;Zhou Feng;Chen Chunhong;Chen Hua;Wu Yipin

..............page:1729-1734

A Model for Mechanical Property Evaluation of the Periodic Porous Low-k Materials by SAW
Li Zhiguo;Yao Suying;Xiao Xia;Bai Maosen

..............page:1722-1728

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs
Li Meng;Yu Zhiping

..............page:1717-1721

A Continuous and Analytical Surface Potential Model for SOI LDMOS
Xu Wenjie;Sun Lingling;Liu Jun;Li Wenjun;Zhang Haipeng;Wu Yanming;He Jia

..............page:1712-1716

A New Method for InGaAs/InP Composite Channel HEMTs Simulation
Liu Liang;Zhang Haiying;Yin Junjian;Li Xiao;Xu Jingbo;Song Yuzhu;Liu Xunchun

..............page:1706-1711

A Novel Verification Development Platform for Passive UHF RFID Tag
Chen Liying;Hou Chunping;Mao Luhong;Wu Shunhua;Xu Zhenmei;Wang Zhenxing

..............page:1696-1700

Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC
Wang Chao;Zhang Yimen;Zhang Yuming;Guo Hui;Xu Daqing;Wang Yuehu

..............page:1701-1705