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Chinese Journal of Semiconductors
0253-4177
2007 Issue 1
Circuit Simulation of SEU for SRAM Cells
Liu Zheng;Sun Yongjie;Li Shaoqing;Liang Bin
..............page:138-141
RF-CMOS Modeling:RF-MOSFET Modeling for Low Power Applications
Liu Jun;Sun Lingling;Xu Xiaojun
..............page:131-137
Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets
Nie Yuhong;Liu Yong;Yao Shouguang
..............page:127-130
Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP
Lü Yanqiu;Yue Fangyu;Hong Xuekun;Chen Jiangfeng;Han Bing;Wu Xiaoli;Gong Haimei
..............page:122-126
IC Implementation of a Programmable CMOS Voltage Reference
Zhang Ke;Guo Jianmin;Kong Ming;Li Wenhong
..............page:36-41
Waveguide Optimization for a 9.0μm GaAs-Based Quantum Cascade Laser
Li Lu;Liu Fengqi;Shao Ye;Liu Junqi;Wang Zhanguo
..............page:31-35
10Gb/s GaAs PHEMT Current Mode Transimpedance Preamplifier for Optical Receiver
Jiao Shilong;Ye Yutang;Chen Tangsheng;Feng Ou;Jiang Youquan;Fan Chao;Li Fuxiao
..............page:24-30
Design and Analysis of a Long Wavelength MOEMS Tunable Filter
Wu Xuming;Wang Xiaodong;He Guorong;Wang Qing;Cao Yulian;Tan Manqing
..............page:117-121
Design and Mechanical Characteristics of Novel MEMS Microneedles
Sun Xiao;Jia Shuhai;Zhu Jun;Li Yigui
..............page:113-116
High-Power Ridge-Waveguide Tapered Diode Lasers at 14xx nm
Li Jing;Ma Xiaoyu;Wang Jun
..............page:108-112
Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED
Wang Xiaohua;Zhan Wang;Liu Guojun
..............page:104-107
High Brightness AlGaInP LED with Coupled Distributed Bragg Reflector
Yu Xiaodong;Han Jun;Li Jianjun;Deng Jun;Lin Weizhi;Da Xiaoli;Chen Yixin;Shen Guangdi
..............page:100-103
High-Efficiency n-nc-Si:H/p-c-Si Heterojunction Solar Cells
Zhang Qunfang;Zhu Meifang;Liu Fengzhen;Zhou Yuqin
..............page:96-99
Plasma-Induced Damage on 90nm-Technology MOSFETs
Tang Yu;Hao Yue;Meng Zhiqin;Ma Xiaohua
..............page:92-95
An Inverter Unified Model of RTT
Guo Weilian;Niu Pingjuan;Miao Changyun;Yu Xin;Wang Wei;Liang Huilai;Zhang Shilin;Li Jianheng;Song Ruiliang;Hu Liuchang;Qi Haitao;Mao Luhong
..............page:84-91
Magnetic Viscosity of Si Melt Under a Magnetic Field
Zhang Wen;Xu Yuesheng;Wang Shengli
..............page:65-68
Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Cry
Zhang Qunshe;Chen Zhiming;Li Liuchen;Yang Feng;Pu Hongbin;Feng Xianfeng
..............page:60-64
Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates
Deng Hong;Tang Bin;Cheng He;Wei Min;Chen Jinju
..............page:56-59
Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer
Fu Liming;Yang Deren;Ma Xiangyang;Guo Yang;Que Duanlin
..............page:52-55
Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing
Zhou Jingtao;Zhu Hongliang;Cheng Yuanbing;Wang Baojun;Wang Wei
..............page:47-51
Strain Distribution and Piezoelectric Effect in GaN/AlN Quantum Dots
Liang Shuang;Lu Yanwu
..............page:42-46
Structural and Optical Performance of GaN Thick Film Grown by HVPE
Wei Tongbo;Ma Ping;Duan Ruifei;Wang Junxi;Li Jinmin;Liu Zhe;Lin Guoqiang;Zeng Yiping
..............page:19-23
Off-State Breakdown Characteristics of PDSOI nMOSFETs
Bi Jinshun;Hai Chaohe
..............page:14-18
Fabrication of SiC MESFETs for Microwave Power Applications
Bai Song;Chen Gang;Zhang Tao;Li Zheyang;Wang Hao;Jiang Youquan;Han Chunlin;Chen Chen
..............page:10-13
Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD
Li Jiaye;Zhao Yongmei;Liu Xingfang;Sun Guosheng;Luo Muchang;Wang Lei;Zhao Wanshun;Zeng Yiping;Li Jinmin
..............page:1-4
Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT
Liu Shuhuan;Lin Dongsheng;Guo Xiaoqiang;Liu Hongbing;Jiang Xinbiao;Zhu Guangning;Li Da;Wang Zujun;Chen Wei;Zhang Wei;Zhou Hui;Shao Beibei;Li Junli
..............page:78-83
Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT
Ma Xiangbai;Zhang Jincheng;Guo Liangliang;Feng Qian;Hao Yue
..............page:73-77
Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor
Chen Jiezhi;Shi Yi;Pu Lin;Long Shibing;Liu Ming;Zheng Youdou
..............page:69-72