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Chinese Journal of Semiconductors
0253-4177
2006 Issue z1
Electrical Properties of HfOxNy Gate Dielectrics
Jiang Ran;Xie Erqing
..............page:172-174
Photoluminescence Characterization of HfON : Tb Films with Sputtering
Jiang Ran;Xie Erqing;Jia Changwen;Lin Hongfeng;Pan Xiaojun;Li Hui
..............page:169-171
Optical Properties of Direct Wafer Bonded Micro-Cavity Structures
Lao Yanfeng;Wu Huizhen;Huang Zhanchao;Liu Cheng;Cao Meng
..............page:304-308
Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure
Liu Cheng;Wu Huizhen;Lao Yanfeng;Huang Zhanchao;Cao Meng
..............page:309-313
High Resolution X-Ray Diffraction and Reciprocal Lattice Mapping of Strained-Si/SiGe on SOI
Ma Tongda;Tu Hailing;Shao Beiling;Liu Ansheng;Hu Guangyong
..............page:175-178
Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process
Wang Jing;Liang Renrong;Xu Yang;Liu Zhihong;Xu Jun;Qian Peixin
..............page:179-182
Development of a Stripe Gate Power MOSFET
Wang Lixin;Liao Taiyi;Lu Jiang
..............page:205-207
Field Emission from Hafnium Oxynitride
Duan Huigao;Xie Erqing;Ye Fan;Jiang Ran;Wang Xiaoming
..............page:208-210
Field Emission from Reaction Sputtering CN Films
Lin Hongfeng;Xie Erqing;Zhang Jun;Yan Xiaoqin;Chen Zhiyong
..............page:211-213
Electric Characteristics of Pentacene Field Effect Transistor
Deng Jinxiang;Chen Guanghua;Beton P H
..............page:214-217
Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors
Wu Huizhen;Liang Jun;Lao Yanfeng;Yu Ping;Xu Tianning;Qiu Dongjiang
..............page:218-222
High Linearity Float-Zone Silicon Phototransistors with High Sensitivity and Stability
Han Dejun;Sun Caiming;Sheng Liyan;Zhang Xiurong;Zhang Haijun;Yan Fengzhang;Yang Ru;Zhang Lu;Ning Baojun
..............page:223-226
A Research on Current Collapse of GaN HEMTs Under DC High Voltage
Long Fei;Du Jiangfeng;Luo Qian;Zhou Wei;Xia Jianxin;Yang Mohua
..............page:227-230
Temperature Characteristics of Microwave Power SiGe HBTs
Yang Jingwei;Zhang Wanrong;Jin Dongyue;Qiu Jianjun;Gao Pan
..............page:231-234
A Novel Strained Si Channel Heterojunction pMOSFET
Zhang Jing;Xu Wanjing;Tan Kaizhou;Li Rongqiang;Li Kaicheng;Liu Daoguang;Liu Luncai
..............page:235-238
Microwave Power-Tested Technology of SiC MESFET
Wang Tongxiang;Pan Hongshu;Li Liang
..............page:239-241
A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs
He Jin;Tao Yadong;Bian Wei;Liu Feng;Niu Xudong;Song Yan
..............page:242-247
Device Simulation of Nano-Scale MOSFETs Based on Bandstructure Calculation
Yu Zhiping;Tian Lilin
..............page:248-251
Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique
Zhang Miao;Di Zengfeng;Liu Weili;Luo Suhua;Song Zhitang;Chu Paul K;Lin Chenglu
..............page:252-256
Reliability Model of Thin Oxide CMOS
Liao Jingning;Guo Chunsheng;Liu Pengfei;Wu Yuehua;Li Zhiguo
..............page:257-261
Development of High Performance AlGaN/GaN HEMTs with Low Ohmic Contact
Liu Jian;Li Chenzhan;Wei Ke;He Zhijing;Liu Guoguo;Zheng Yingkui;Liu Xinyu;Wu Dexin
..............page:262-265
SOI Device Design for SEU Hardening
He Wei;Zhang Zhengxuan
..............page:291-294
Failure Analysis of Electronic Devices
Wang Kaijian;Li Guoliang;Zhang Jun;Wang Jing
..............page:295-298
Leakage Current Analysis of High Power AlGaInP Lasers
Xu Yun;Li Yuzhang;Song Guofeng;Gan Qiaoqiang;Yang Guohua;Cao Yulian;Cao Qing;Guo Liang;Chen Lianghui
..............page:299-303
Electrical Shock Effects on MCT Long-Wavelength PC Detectors
Liu Dafu;Wu Ligang;Xu Guosen;Zhang Lianmei;Jin Xiufang;Gong Haimei
..............page:314-317
An OPAMP with High DC Gain in 0.18m Digital CMOS
Wang Han;Ye Qing
..............page:318-321
Study of Improved Performance of SOI Devices and Circuits
Hai Chaohe;Han Zhengsheng;Zhou Xiaoyin;Zhao Lixin;Li Duoli;Bi Jinshun
..............page:322-327
Solar Cells on MCZ(Ge) Silicon Substrates
Du Yongchao;Xu Shouyan;Liu Feng
..............page:328-331
Design of Continuous-Time Filter with Adjustable Bandwidth
Mo Bangxian;Xiang Bin;Chen Jianghua;Ni Xuewen
..............page:332-334
An Integrated Four Quadrant CMOS Analog Multiplier
Huo Mingxue;Tan Xiaoyun;Liu Xiaowei;Wang Yonggang;Ren Lianfeng;Qi Xiangkun
..............page:335-339
Application on Sidewall Chrome Attenuated New Structure Phase Shift Mask
Xie Changqing;Liu Ming;Chen Baoqin;Ye Tianchun
..............page:340-342
Double Side Fine CMP of Silicon Wafer
Zhang Kailiang;Song Zhitang;Zhong Min;Zheng Mingjie;Feng Songlin
..............page:396-399
Magnetic Field Optimization of a Reactive Ion Etching Device with Magnetic Containment
Jing Xiaocheng;Yao Ruohe;Lin Yushu
..............page:422-425
Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily As-Doped Wafer
Sun Shilong;Liu Caichi;Hao Qiuyan;Teng Xiaoyun;Zhao Liwei;Zhao Yanqiao;Wang Lijian;Shi Yiqing
..............page:165-168
1mm SiC Multi-Finger Gate Microwave Power Device
Chen Gang;Qian Wei;Chen Bin;Bai Song
..............page:419-421
Small Size,Low Power RFID RF Front End Circuit Design
Zhou Shenghua;Yang Zhichao;Wu Nanjian;Li Meiyun
..............page:361-364
Study on High-Speed Digital-to-Analog Converter Based on BiCMOS Technology
Li Rongqiang;Liu Daoguang;Yan Gang;He Kaiquan;Liu Yukui;Tan Kaizhou;Zhang Jing;Yang Qiudong;Zhong Yi;Shu Man;Xu Wanjing;Xu Shiliu
..............page:365-369
Design and Optimization of Low-Power Processor for Wireless Sensor Network
Zhao Gang;Hou Ligang;Luo Rengui;Liu Yuan;Wu Wuchen
..............page:370-373
Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction
Zhang Lin;Zhang Yimen;Zhang Yuming;Tang Xiaoyan
..............page:378-380
Etching Characteristics of PECVD SiC
Chen Sheng;Li Zhihong;Zhang Guobing;Guo Hui;Wang Yu;Tian Dayu
..............page:381-384
Research of the Critical Parameters of Power RF LDMOS
Huang Xiaolan;Wu Dexin;Zhang Yaohui;Li Ke;Wang Lixin
..............page:266-270
Study of High-Speed Digital-to-Analog Converter Based on BiCMOS Technology
Liu Daoguang;Li Rongqiang;Shi Jiangang;He Kaiquan;Liu Yukui;Tan Kaizhou;Zhang Jing;Yang Qiudong;Zhong Yi;Shu Man;Xu Wanjing;Xu Shiliu
..............page:271-274
Development of High Voltage pMOS Devices
Song Limei;Li Hua;Du Huan;Xia Yang;Han Zhengsheng
..............page:275-278
Device Structure and Fabricating Method for SOI LIGBT/LDMOS Integrated with Anti-ESD Diode
Zhang Haipeng;Wang Qin;Sun Lingling;Gao Mingyu;Li Wenjun;Lü Youhua;Liu Guohua;Wang Jie
..............page:279-282
High Performance Gate Length 22nm CMOS Device with Strained Channel and EOT 1.2nm
Xu Qiuxia;Qian He;Duan Xiaofeng;Liu Haihua;Wang Dahai;Han Zhengsheng;Liu Ming;Chen Baoqin;Li Haiou
..............page:283-290
Amorphization Implant Technology in NiSi SALICIDE Process
Jiang Yulong;Ru Guoping;Qu Xinping;Li Bingzong
..............page:385-388
Two Kinds of Patterned SiGe Epitaxial Growth Technologies
Xu Yang;Wang Fei;Xu Jun;Liu Zhihong;Qian Peixin
..............page:389-391
Direct Bonded SOI Wafers Technology
Huang Chenhung;Chiou Herngde
..............page:392-395
CMP and Electrochemical Characterization of Ge2Sb2Te5 Film in Polishing Slurry
Liu Qibin;Zhang Kailiang;Wang Liangyong;Song Zhitang;Feng Songlin
..............page:161-164
Research on CMP Slurry for Fine Polishing of Si Substrate
Zhong Min;Zhang Kailiang;Song Zhitang;Feng Songlin
..............page:400-402
Relationship Between Annealing Temperature and Thermal Stress
Wu Yuehua;Li Zhiguo;Liu Zhimin;Ji Yuan;Hu Xiuzhen;Liao Jingning
..............page:403-406
Si-Glass Hermetic Package with the Benzo-Cyclo-Butene Material
Liu Yufei;Liu Wenping;Li Sihua;Wu Yaming;Luo Le
..............page:407-410
Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si
Zhu Yanyan;Xu Run;Chen Sheng;Fang Zebo;Xue Fei;Fan Yongliang;Jiang Zuimin
..............page:411-414
Characteristics of Nanometer MOSFETs with Mechanical Strain in the Channel
Wu Tao;Du Gang;Liu Xiaoyan;Kang Jinfeng;Han Ruqi
..............page:415-418
Effect of Si-Implantation on the Structure and Resistance of Ge2Sb2Te5
Liu Bo;Song Zhitang;Feng Songlin;Chen Bomy
..............page:158-160
Fabrication of 8×8 MEMS Optical Switch Array
Jia Cuiping;Dong Wei;Zhou Jingran;Liu Caixia;Zang Huidong;Xuan Wei;Xu Baokun;Chen Weiyou
..............page:343-346
Wet Etching and Releasing of MEMS
Ou Yi;Shi Shali;Li Chaobo;Jiao Binbin;Chen Dapeng
..............page:347-350
FEA Method in the 3D Thermal Simulation of MCM
Hu Xiuzhen;Li Zhiguo;Guo Chunsheng;Wu Yuehua;Liao Jingning
..............page:351-353
Principle, Practice, and Failure Analysis of IC Test Based on ATE
Pan Shujuan;Zhong Jie
..............page:354-357
Investigation on Interface Planarization of Driver IC for Storage Cells of MRAM
Du Huan;Zhao Yuyin;Han Zhengsheng;Xia Yang;Zhang Zhichun
..............page:358-360
Influence of Deposition Parameters on Electrical Properties of Ge2Sb2Te5 Thin Films
Xia Jilin;Liu Bo;Song Zhitang;Feng Songlin
..............page:155-157
Chemical Vapor Deposition of Ge Films on Si1-xGex: C Buffers
Wang Ronghua;Han Ping;Xia Dongmei;Li Zhibing;Han Tiantian;Liu Chengxiang;Fu Kai;Xie Zili;Xiu Xiangqian;Zhu Shunming;Gu Shulin;Shi Yi;Zhang Rong;Zheng Youdou
..............page:151-154
Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings
Li Fanghua;Jiang Zuimin
..............page:148-150
Thin Highly-Relaxed SiGe Induced by Ion Implantion into the Epitaxial Substrates
Xu Xiangdong;Guo Fulong;Zhou Wei;Liu Zhihong;Zhang Zhaojian;Li Xiyou;Zhang Wei;Qian Peixin
..............page:140-143
Rapid Thermal Annealing Characteristics of the Ge/Si(001) Nano-Island Multilayer
Shi Wenhua;Luo Liping;Zhao Lei;Zuo Yuhua;Wang Qiming
..............page:136-139
Deposition and Ion Implantation of Boron Nitride Film
Deng Jinxiang;Chen Hao;Liu Junkai;Tian Ling;Zhang Yan;Zhou Tao;He Bin;Chen Guanghua;Wang Bo;Yan Hui
..............page:127-130
Deposition of SiCN Nano-Films by Sputtering Method on Quartz Substrate
Lin Hongfeng;Xie Erqing;Zhang Jun;Yan Xiaoqin;Chen Zhiyong
..............page:124-126
Characteristics of Vanadium Ion-Implanted Layer of 4H-SiC
Wang Chao;Zhang Yuming;Zhang Yimen
..............page:120-123
Optical Properties of Ultralong Hexagonal Polytype Nano-Silicon Carbide Rod
Zhang Hongtao;Chen Kun;Lemmer U;Bastian G
..............page:117-119
Space-Charge-Limited Current Properties of Amorphous GaN Thin Films
Zhang Zhenxing;Xie Erqing;Pan Xiaojun;Jia Lu;Han Weihua
..............page:113-116
Optical Properties of a-GaN Deposited by Sputtering
Jia Lu;Xie Erqing;Pan Xiaojun;Zhang Zhenxing
..............page:109-112
Properties of Zn-Diffused InP Surfaces with Sealed Tube Method
Lü Yanqiu;Zhuang Chunquan;Huang Yangcheng;Li Ping;Gong Haimei
..............page:105-108
Influence of GaN Buffer Layer for InN Growth
Liu Bin;Zhang Rong;Xie Zili;Xiu Xiangqian;Li Liang;Liu Chengxiang;Han Ping;Zheng Youdou
..............page:101-104
Investigation of Indium Surface Segregation in InxGa1-xN Films
Liu Chengxiang;Xie Zili;Han Ping;Liu Bin;Li Liang;Fu Kai;Zhou Jianjun;Ye Jiandong;Wen Bo;Wang Ronghua;Zhang Yu;Chen Dunjun;Jiang Ruolian;Gu Shulin;Shi Yi;Zhang Rong;Zheng Youdou
..............page:97-100
Influence of Thermal Annealing on Properties of InGaN Films
Wen Bo;Jiang Ruolian;Liu Chengxiang;Xie Zili;Zhou Jianjun;Han Ping;Zhang Rong;Zheng Youdou
..............page:92-96
Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs
Xu Tianning;Wu Huizhen;Si Jianxiao;Cao Chunfang;Qiu Dongjiang;Dai Ning
..............page:87-91
Calculation of Band Gap Structures of 2D Square Lattice Photonic Crystals Using Plan Wave Expansion Method
Cun Huanyao;Tan Renbing;Wang Rongli;Bai Han;Zhang Xi;Hu Jiaguang;Zhang Jin
..............page:64-67
XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers
Huang Zhanchao;Wu Huizhen;Lao Yanfeng;Liu Cheng;Cao Meng
..............page:58-63
Temperature Dependences of Polaron in a Parabolic Quantum Wire
Ding Zhaohua;Zhao Cuilan;Xiao Jinglin
..............page:54-57
Effect of Electron-Phonon Interaction on Nonequilibrium Transport in Quantum Dot Systems
Chen Zuozi;Lu Haizhou;Lü Rong;Zhu Bangfen
..............page:44-48
Photoluminescence of nc-Si/SiN Superlattices Embedded in Optical Microcavities
Chen San;Qian Bo;Chen Kunji;Cen Zhanhong;Liu Yansong;Han Peigao;Ma Zhongyuan;Xu Jun;Li Wei;Huang Xinfan
..............page:25-28
Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs
Yu Tongjun;Kang Xiangning;Qin Zhixin;Chen Zhizhong;Yang Zhijian;Hu Xiaodong;Zhang Guoyi
..............page:20-24
Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array
Yu Linwei;Chen Kunji;Song Jie;Wang Jiumin;Wang Xiang;Li Wei;Huang Xinfan
..............page:15-19
Photoluminescence of Electron-and Neutron-Irradiated n-Type 6H-SiC
Zhong Zhiqin;Gong Min;Wang Ou;Yu Zhou;Yang Zhimei;Xu Shijie;Chen Xudong;Ling Chichung;Fung Hanyuan;Beling C D
..............page:11-14
Nano Electrical Devices and Integration
Liu Ming;Chen Baoqin;Xie Changqing;Wang Congshun;Long Shibing;Xu Qiuxia;Li Zhigang;Yili Chengrong;Tu Deyu;Shang Liwei
..............page:7-10
High Resistivity and Thick Epitaxial Layer of n-Type on Low Resistivity p-Type Substrates
Tan Weidong;Tang Youqing;Ma Lixing;Luo Hong;Zhang Wenqing;Gao Tao
..............page:183-185
Fabrication of Surface Nanostructures Using Scanning Electron Microscope
Zhu Nianlin;Zhang Jin;Chen Ergang;Bai Han;Zhang Xi;Wang Guangcan;Guo Junmei;Dou Juying
..............page:186-188
Fabrication of SOI Material Using Low Temperature Bonding Technology
Zhan Da;Ma Xiaobo;Liu Weili;Song Zhitang;Feng Songlin
..............page:189-192
Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown
Xu Mingzhen;Tan Changhua;Duan Xiaorong
..............page:193-196
Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect
Tan Jingjing;Zhou Mi;Chen Tao;Xie Qi;Ru Guoping;Qu Xinping
..............page:197-201
Field Emission from Rare-Earth Silicides
Duan Huigao;Xie Erqing;Ye Fan;Wang Xiaoming
..............page:202-204
Patterned Growth and Field Emission Properties of ZnO Nanorods
Chang Zhongkun;Yu Ke;Zhang Yongsheng;Li Lijun;Ouyang Shixi;Zhang Qingjie;Wang Qingyan;Zhu Ziqiang
..............page:84-86
Formation Process of S-K Quantum Dots
Yu Like;Xu Bo;Wang Zhanguo;Jin Peng;Zhao Chang;Lei Wen;Hu Liangjun;Liu Ning
..............page:80-83
Photoluminescence During the Crystallization of a-Si: H/SiO2 Multilayers
Ma Zhongyuan;Han Peigao;Li Wei;Chen San;Qian Bo;Xu Jun;Xu Ling;Huang Xinfan;Chen Kunji;Feng Duan
..............page:76-79
Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film
Liang Zhijun;Wang Zhibin;Wang Li;Zhao Fuli;Yang Shenghong;He Zhenhui;Chen Dihu
..............page:72-75
Photoluminescence Study on Resonant Energy Transfer Process Between Two Sizes of CdTe QDs Embedded in Gelatin Films
Xu Ling;Ma Zhongyuan;Xu Jun;Huang Xinfan;Chen Kunji
..............page:68-71
Design Issues for Cross-Coupled LC Oscillators
Man Jiahan;Zhao Kun;Ye Qing
..............page:40-43
Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications
Li Wenjun;Cheng Xinhong;Song Zhaorui;Chen Zhanfei;Liu Jun;Sun Lingling
..............page:32-35
Match and Mixed Lithography Technology Between E-Beam Lithography System and Optical Lithography System
Chen Baoqin;Liu Ming;Xu Qiuxia;Xue Lijun;Li Jinru;Tang Yueke;Zhao Min;Liu Zhuming;Wang Deqiang;Ren Liming;Hu Yong;Long Shibing;Lu Jing;Yang Qinghua;Zhang Lihui;Niu Jiebin
..............page:1-6