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Chinese Journal of Semiconductors
0253-4177
2006 Issue 8
Micromachined High Mode Resonant Piezoresistive Cantilever Sensor with Ultrahigh Mass-Sensing Resolution
Liu Jian;Li Xinxin;Jin Dazhong;Liu Min;Wang Yuelin;Zuo Guomin;Yu Haitao;Bao Hanhan
..............page:1496-1502
Design of a Novel Video-Rate Adaptive Equalizer IC
Huang Jiaoying;He Yigang;Shen Fang
..............page:1503-1507
Design and Stability Analysis of a 0. 6V Supply CMOS Voltage Reference
Wang Han;Ye Qing
..............page:1508-1513
A Single-Chip and Low-Power CMOS Amplifier for Neural Signal Detection
Wang Yufeng;Wang Zhigong;Lü Xiaoying;Wang Huiling
..............page:1490-1495
Reducing the Slope Compensation Effect on the Load Capacity of DC-DC Converters
Wang Hongyi;Lai Xinquan;Li Yushan
..............page:1484-1489
Analysis of Operation Errors of TO-Packaged VCSELs
Liu Chao;Zhang Yali;Xu Guizhi;Zhang Tao;Hou Guanghui;Zhu Ninghua
..............page:1480-1483
Fabrication of Practical 1730nm Waveband Laser Diodes with Buried Heterojunction Structures
Lin Tao;Zheng Kai;Wang Cuiluan;Wang Jun;Wang Yonggang;Zhong Li;Feng Xiaoming;Ma Xiaoyu
..............page:1467-1470
Improvement of the Frequency Response of a DFB Laser Using Injection Locking
Zhang Tao;San Haisheng;Wen Jimin;Liu Yu;Liu Chao;Chen Wei;Xie Liang;Zhu Ninghua
..............page:1463-1466
Structural Characteristics of ZnO Epilayer Grown on Si Substrates
Wang Kun;Yao Shude;Ding Zhibo;Zhu Junjie;Fu Zhuxi
..............page:1386-1390
RF-MBE Growth of InAlGaN Epilayer on Sapphire Substrate
Wang Baozhu;Wang Xiaoliang;Wang Xiaoyan;Wang Xinhua;Guo Lunchun;Xiao Hongling;Wang Junxi;Liu Hongxin;Zeng Yiping;Li Jinmin
..............page:1382-1385
Necessity of Profile-Fitting when Using X-Ray Diffraction to Analyze GaN Thin Films
Chen Zhitao;Xu Ke;Yang Zhijian;Su Yueyong;Pan Ya;Yang Xuelin;Zhang Han;Zhang Guoyi
..............page:1378-1381
A Low Noise,1.25Gb/s Front-End Amplifier for Optical Receivers
Xue Zhaofeng;Li Zhiqun;Wang Zhigong;Xiong Mingzhen;Li Wei
..............page:1373-1377
A Novel Sampling Switch Suitable for Low-Voltage Analog-to-Digital Converters
Peng Yunfeng;Zhou Feng
..............page:1367-1372
AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films
Chen Jinhuo;Wang Yongshun;Zhu Haihua;Hu Jiaxing;Zhang Fujia
..............page:1360-1366
Fabrication and Evaluation of Bragg Gratings on Optimally Designed Silicon-on-Insulator Rib Waveguides Using Electron-Beam Lithography
Wu Zhigang;Zhang Weigang;Wang Zhi;Kai Guiyun;Yuan Shuzhoung;Dong Xiaoyi;Utaka K;Wada Y
..............page:1347-1350
Lateral Oxidation in Vertical Cavity Surface Emitting Lasers
Liu Wenli;Hao Yongqin;Wang Yuxia;Jiang Xiaoguang;Feng Yuan;Li Haijun;Zhong Jingchang
..............page:1351-1354
9μm Cutoff 128×128 AlGaAs/GaAs Quantum Well Infrared Photodetector Focal Plane Arrays
Li Xianjie;Liu Yingbin;Feng Zhen;Guo Fan;Zhao Yonglin;Zhao Run;Zhou Rui;Lou Chen;Zhang Shizu
..............page:1355-1359
Fabrication of a 125mm Poly-Si TFT Active-Matrix Driving Color AMOLED
Meng Zhiguo;Kwok Hoising;Wu Chunya;Wong Man;Xiong Shaozhen
..............page:1514-1518
Degradation Under High-Field Stress and Effects of UV Irradiation on AlGaN/GaN HEMTs
Wang Chong;Zhang Jincheng;Hao Yue;Yang Yan
..............page:1436-1440
Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector
Sun Hao;Qi Ming;Xu Anhuai;Ai Likun;Su Shubing;Liu Xinyu;Liu Xunchun;Qian He
..............page:1431-1435
A Method for Locating the Position of an Oxide Trap in a MOSFET by RTS Noise
Bao Li;Bao Junlin;Zhuang Yiqi
..............page:1426-1430
Fabrication of a High-Performance Solenoid Microinductor
Fang Dongming;Zhou Yong;Zhao Xiaolin
..............page:1422-1425
Preparation by a Low Temperature Method and the Field Emission Properties of Carbon Nanotube Cold Cathodes
Qin Yuxiang;Hu Ming;Li Haiyan;Zhang Zhisheng;Zou Qiang
..............page:1417-1421
THz-Wave Generation and Detection from ZnSe Crystal Induced by a Femtosecond Laser
Wu Xiaojun;Huang Min;Chen Xiaoshu;Zhao Fuli;Jia Tianqing;Wang Gang;Xu Ningsheng
..............page:1412-1416
A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency
Yang Rong;Li Junfeng;Xu Qiuxia;Hai Chaohe;Han Zhengsheng;Qian He
..............page:1343-1346
Optimization of the Electron Blocking Layer in GaN Laser Diodes
Li Ti;Pan Huapu;Xu Ke;Hu Xiaodong
..............page:1458-1462
Effect of the TiOx Line Width on Tunneling at Tunneling Junctions
Zhang Chaoyan;Liu Qinggang;Li Min;Kuang Dengfeng;Guo Weilian;Zhang Shilin;Hu Xiaotang
..............page:1453-1457
Design of a 1200V MR D-RESURF LDMOS and BCD Technology
Qiao Ming;Fang Jian;Xiao Zhiqiang;Zhang Bo;Li Zhaoji
..............page:1447-1452
Optimization Design for Trench Drift Region Structure in RF Power LDMOS
Wang Yiming;Li Zehong;Wang Xiaosong;Zhai Xiangkun;Zhang Bo;Li Zhaoji
..............page:1441-1446
Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process
Ao Jianping;Sun Yun;Wang Xiaoling;Li Fengyan;He Qing;Sun Guozhong;Zhou Zhiqiang;Li Changjian
..............page:1406-1411
Eteh Pits Formed by Schaake and Chen Etchants in HgCdTe Epilayer
Cao Xiuliang;Yang Jianrong
..............page:1401-1405
Characteristics of Semi-Insulating 4H-SiC Layers by Vanadium Ion Implantation
Wang Chao;Zhang Yuming;Zhang Yimen
..............page:1396-1400
Growth and Properties of High Quality InAs Single Crystals
Zhao Youwen;Sun Wenrong;Duan Manlong;Dong Zhiyuan;Yang Zixiang;Lü Xuru;Wang Yingli
..............page:1391-1395