Chinese Journal of Semiconductors 2006 Issue 7 A Design Technique of Neuron MOS Binary Circuits Based on Multiple-Valued Logic

A Design Technique of Neuron MOS Binary Circuits Based on Multiple-Valued Logic
Hang Guoqiang

..............page:1316-1320

2D Numerical Simulation of Sacrificial Layer Etching
Li Yanhui;Li Weihua

..............page:1321-1325

Three-Dimensional Fabrication by Electron Beam Lithography Using Overlapped Increment Scanning
Hao Huijuan;Zhang Yulin;Lu Wenjuan;Wei Qiang

..............page:1326-1330

An Analytical Expression of Free Carrier Lifetime in an SOI Rib Waveguide Used for Raman Amplification
Chen Mingyi;Mao Luhong;Hao Xianren;Zhang Shilin;Guo Weilian

..............page:1310-1315

Theoretical Analysis of a Novel Resonant Cavity Enhanced Modulator with High Extinction Ratio and Low Insertion Loss
Zhou Zhen;Yu Chongxiu;Ma Jianxin

..............page:1305-1309

A New Design Method for the Gate-Cathode Layout of GCT
Wang Cailin;Gao Yong

..............page:1300-1304

A Photovoltaic Si X-Ray Detector
Zhang Zhiguo

..............page:1294-1299

Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties
Zhang Qifeng;Rong Yi;Chen Xianxiang;Zhang Gengmin;Zhang Zhaoxiang;Xue Zengquan;Chen Changqi;Wu Jinlei

..............page:1225-1229

Effect of Growth Temperature on Properties of ZnO Thin Films
Su Hongbo;Dai Jiangnan;Pu Yong;Wang Li;Li Fan;Fang Wenqing;Jiang Fengyi

..............page:1221-1224

Optical and Electrical Properties of ZnO/PS Heterostructure
Zhao Bo;Li Qingshan;Zhang Ning;Chen Da;Zheng Xuegang

..............page:1217-1220

Synthesis and Spectral Properties of InP Colloidal Quantum Dots
Zhang Daoli;Zhang Jianbing;Wu Qiming;Yuan Lin;Chen Sheng

..............page:1213-1216

Infrared Spectrum of Nitrogen-Vacancy Complexes in Nitrogen-Implanted Silicon
Chen Hailong;Wang Lei;Ma Xiangyang;Yang Deren

..............page:1209-1212

Full-Chip Scalable Routing Framework Considering Congestion and Performance
Yao Hailong;Cai Yici;Hong Xianlong;Zhou Qiang

..............page:1201-1208

Accurate Interconnection Length and Routing Channel Width Estimates for FPGAs
Gao Haixia;Ma Xiaohua;Yang Yintang

..............page:1196-1200

A 1.1GHz LC VCO with Automatic Amplitude Control for Tuner Applications
Yan Jun;Mao Wei;Ma Desheng;Gu Ming;Xu Qiming;Hu Xueqing;Shi Yin;Dai F F

..............page:1189-1195

A 16 bit Stereo Audio ∑△ A/D Converter
Chen Lei;Zhao Yuanfu;Gao Deyuan;Wen Wu;Wang Zongmin;Zhu Xiaofei

..............page:1183-1188

A Pre-Oxidation Cleaning Process to Decrease the Microroughess of Si Wafer Surfaces
Ku Liming;Wang Jing;Zhou Qigang

..............page:1331-1334

Cl2-Based Dry Etching of GaN Using Inductively Coupled Plasma
Liu Beiping;Li Xiaoliang;Zhu Haibo

..............page:1335-1338

A New Direct Tunneling Gate Current Model for Short Channel MOSFETs with HALO Structure
Zhao Yao;Xu Mingzhen;Tan Changhua

..............page:1264-1268

C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC
Gao Jinxia;Zhang Yimen;Zhang Yuming

..............page:1259-1263

Output Power of an AlGaN/GaN HFET on Sapphire Substrate
Zhang Zhiguo;Yang Ruixia;Li Li;Feng Zhen;Wang Yong;Yang Kewu

..............page:1255-1258

High-Temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures
Tao Chunmin;Tao Yaqi;Chen Cheng;Kong Yuechan;Chen Dunjun;Shen Bo;Jiao Gang;Chen Tangsheng;Zhang Rong;Zheng Youdou

..............page:1251-1254

Data Retention in EEPROM Cells
Cheng Wei;Hao Yue;Ma Xiaohua;Liu Hongxia

..............page:1290-1293

K-Band Monolithic Low Noise Amplifier with High Gain
Wang Chuang;Qian Rong;Sun Xiaowei

..............page:1285-1289

Time Dependence of Radiation Damage in Bipolar Operational Amplifiers
Gao Song;Lu Wu;Ren Diyuan;Niu Zhenhong;Liu Gang

..............page:1280-1284

A Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection
Chen Wanjun;Zhang Bo;Li Zhaoji

..............page:1274-1279

Output Characteristics of a Buried n Layer RF Power PSOI LDMOS
Wang Xiaosong;Li Zehong;Wang Yiming;Zhang Bo;Li Zhaoji

..............page:1269-1273

Refinement of an Analytical Approximation of the Surface Potential in MOSFETs
Lu Jingxue;Huang Fengyi;Wang Zhigong;Wu Wengang

..............page:1155-1158

A Wide-Band High-Linearity Down-Conversion Mixer for Cable Receptions
Gu Ming;Shi Yin;Dai F F

..............page:1159-1163

Design and Implementation of a Novel Area-Efficient Interpolator
Peng Yunfeng;Kong Derui;Zhou Feng

..............page:1164-1169

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks
Wang Wei;Sun Jianping;Gu Ning

..............page:1170-1176

An Analytical Model for the Surface Electrical Field Distribution and Optimization of Bulk-Silicon Double RESURF Devices
Li Qi;Li Zhaoji;Zhang Bo

..............page:1177-1182

Study of Bottom-Gate μc-Si TFTs
Li Juan;Zhang Xiaodan;Liu Jianping;Zhao Shuyun;Wu Chunya;Meng Zhiguo;Zhang Fang;Xiong Shaozhen

..............page:1246-1250

Study of Sublimation Crystal Growth of Bulk AlN
Zhao Youwen;Dong Zhiyuan;Wei Xuecheng;Duan Manlong;Li Jinmin

..............page:1241-1245

Structural and Optical Properties of CdTe Thin Films on Glass Grown by Hot Wall Vacuum Deposition
Yao Zhaohui;Chen Tingjin;Xia Chaofeng;Yuan Hairong;Liu Zuming;Liao Hua;Wang Fan

..............page:1236-1240

Influence of Doping Level on the Gauge Factor of Polysilicon Nano-Film
Chuai Rongyan;Liu Xiaowei;Huo Mingxue;Song Minghao;Wang Xilian;Pan Huiyan

..............page:1230-1235