Chinese Journal of Semiconductors 2006 Issue 6 A K-Band MMIC Medium Power Amplifier for Automotive Radars

A K-Band MMIC Medium Power Amplifier for Automotive Radars
Wang Chuang;Qian Rong;Sun Xiaowei

..............page:1094-1097

Large Two-Dimensional Photonic Band-Gaps Designed by Rapid Genetic Algorithms
Gong Chunjuan;Hu Xiongwei

..............page:1098-1102

Characteristic of a Vertically-Coupled Triple Microring Resonant Wavelength Multi/Demultiplexer
Yan Xin;Ma Chunsheng;Wang Xianyin;Xu Yuanzhe;E Shulin;Zhang Daming

..............page:1103-1108

Optimum Design of PSJ for High-Voltage Devices
Chen Wanjun;Zhang Bo;Li Zhaoji;Deng Xiaochuan

..............page:1089-1093

GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment
Wang Hui;Guo Xia;Liang Ting;Liu Shiwen;Gao Guo;Shen Guangdi

..............page:1042-1045

Calculation of the Efficiency of GaAs Quantum Well Solar Cells
Wang Jianbo;Xiang Bing;Lou Chaogang;Zhang Xiaobing;Lei Wei;Mu Hui;Sun Qiang

..............page:1038-1041

Properties of a Photonic Crystal Microcavity
Zhao Zhimin;Xu Xingsheng;Li Fang;Liu Yuliang;Chen Hongda

..............page:1034-1037

Study of Incubation Layers in Microcrystalline Silicon Solar Cells
Zhang Xiaodan;Zhao Ying;Gao Yantao;Zhu Feng;Wei Changchun;Sun Jian;Geng Xinhua;Xiong Shaozhen

..............page:1030-1033

Growth and Properties of Cd0.8 Mn0.2 Te Crystal
Zhang Jijun;Jie Wanqi

..............page:1026-1029

Electromigration of SnAgCu Solder Interconnects
Wu Yiping;Zhang Jinsong;Wu Fengshun;An Bing

..............page:1136-1140

Raman Online Measurement of Stress Resulting from Micromachining
Sang Shengbo;Xue Chenyang;Zhang Wendong;Xiong Jijun;Ruan Yong;Zhang Dacheng;Hao Yilong

..............page:1141-1146

Fabrication of Micro Zone Plates by E-Beam and X-Ray Lithography
Wang Deqiang;Cao Leifeng;Xie Changqing;Ye Tianchun

..............page:1147-1150

Diffraction Coupling of a Very Long Wavelength Quantum Well Infrared Photodetector Linear Array
Guo Fangmin;Li Ning;Yu Shaoxin;Xiong Dayuan;Lin Jianfeng;Hou Ying;He Yuhuan;Zhu Ziqiang;Lu Wei;Huang Qi;Zhou Junming

..............page:1109-1114

Effects of Reverse Substrate Bias on the Endurance Degradation of FLASH Memory Devices
Shi Kai;Xu Mingzhen;Tan Changhua

..............page:1115-1119

Wide-Band 2π Equivalent-Circuit Model for Spiral Inductors on Silicon
Yang Fan;Wang Xiangzhan;Zheng Wei;Ren Jun;You Huancheng;Li Liping;Yang Mohua

..............page:1084-1088

A Dynamic-State Model of an NPT-IGBT with Localized Lifetime Control
Fang Jian;Wu Chao;Qiao Ming;Zhang Bo;Li Zhaoji

..............page:1078-1083

Optimization of BSIM3 I-V Modeling of High Voltage MOS Devices
Ren Zheng;Shi Yanling;Hu Shaojian;Jin Meng;Zhu Jun;Chen Shoumian;Zhao Yuhang

..............page:1073-1077

Numerical Simulation and Analysis of SiGeC/Si Heterojunction Power Diodes
Gao Yong;Liu Jing;Ma Li;Yu Mingbin

..............page:1068-1072

A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant
Su Shubing;Xu Anhuai;Liu Xinyu;Qi Ming;Liu Xunchun;Wang Runmei

..............page:1064-1067

Transport Current Model of SiGe HBT
Hu Huiyong;Zhang Heming;Dai Xianying;Xuan Rongxi;Cui Xiaoying;Wang Qing;Jiang Tao

..............page:1059-1063

Correlations Between an AlN Insert Layer and Current Collapse in AlGaN/GaN HEMTs
Li Chengzhan;Liu Jian;Liu Xinyu;Xue Lijun;Chen Xiaojuan;He Zhijing

..............page:1055-1058

Fabrication of ZnO Thin-Film Transistors by L-MBE
Zhang Xin'an;Zhang Jingwen;Yang Xiaodong;Lou Hui;Liu Zhenling;Zhang Weifeng;Hou Xun

..............page:1051-1054

Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon
Zhao Liwei;Liu Caichi;Teng Xiaoyun;Hao Qiuyan;Zhu Junshan;Sun Shilong;Wang Haiyun;Xu Yuesheng;Feng Yuchun;Guo Baoping

..............page:1046-1050

Simulation and Optimization of FD SOI CMOS Devices at High Temperatures
Liu Mengxin;Gao Yong;Zhang Xin;Wang Cailin;Yang Yuan

..............page:1120-1124

Design and Fabrication of Excellent Ultra-Broad Digital Attenuator Chips
Wang Huizhi;Li Fuxiao

..............page:1125-1128

A Highly Sensitive Local Curvature Metrology for Internal Stress Detection in Thin Films
Wang Shasha;Chen Jing;Li Dachao;Huang Yubo;Li Zhihong

..............page:1129-1135

Thermoelectric Properties of p-Type Rare-Earth Element Cerium-Filled Skutterudite CeyFexCo4-xSb12
Wang Kun;Tang Xinfeng;Zhang Qingjie

..............page:1021-1025

Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics
Cen Zhanhong;Xu Jun;Li Xin;Li Wei;Chen San;Liu Yansong;Huang Xinfan;Chen Kunji

..............page:1016-1020

Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses
Zhang Guanjie;Xu Bo;Chen Yonghai;Yao Jianghong;Lin Yaowang;Shu Yongchun;Pi Biao;Xing Xiaodong;Liu Rubin;Shu Qiang;Wang Zhanguo;Xu Jingjun

..............page:1012-1015

High-Speed, Robust CMOS Dynamic Circuit Design
Lai Lianzhang;Tang Tingao;Lin Yinyin

..............page:1006-1011

Design and Analysis of Analog Front-End of Passive RFID Transponders
Hu Jianyun;He Yan;Min Hao

..............page:999-1005

An Ultra-Low-Power Embedded EEPROM for Passive RFID Tags
Yan Na;Tan Xi;Zhao Dixian;Min Hao

..............page:994-998

A 2.4GHz Low Power ASK Transmitter for Wireless Capsule Endoscope Applications
Han Shuguang;Chi Baoyong;Wang Zhihua

..............page:988-993

Characterization and Modeling of Finite-Ground Coplanar Waveguides in 0. 13μm CMOS
Chen Xu;Wang Zhigong

..............page:982-987

Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications
Ma Long;Huang Yinglong;Zhang Yang;Wang Liangchen;Yang Fuhua;Zeng Yiping

..............page:959-962

0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz
Zheng Yingkui;Liu Guoguo;He Zhijing;Liu Xinyu;Wu Dexin

..............page:963-965

High-Power Distributed Feedback Laser Diodes Emitting at 820nm
Fu Shenghui;Zhong Yuan;Song Guofeng;Chen Lianghui

..............page:966-969

A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions
Ma Desheng;Shi Yin;Dai Fa Foster

..............page:970-975

Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS
Sun Weifeng;Yi Yangbo;Lu Shengli;Shi Longxing

..............page:976-981