Chinese Journal of Semiconductors 2006 Issue 5 Measurement of Luminous Flux of Blue LEDs Using Spectral-Correction-Integral-Photometry Method

Measurement of Luminous Flux of Blue LEDs Using Spectral-Correction-Integral-Photometry Method
Pan Jiangen;Shen Haiping;Feng Huajun

..............page:932-936

Fabrication of Self-Testable Pressure Sensors Based on Phase Change
Huo Mingxue;Tang Xiaochuan;Yin Liang;Liu Xiaowei;Wang Xilian

..............page:937-943

A Transient Method for Testing Thermoelectric Coolers
Gong Changmeng;Chen Zhen;Wu Zhou;Chang Guoqiang;Qian Ruiming;Chen Yunfei

..............page:944-947

Design of a Monolithic Hot Swap Controller IC with BCD Technology
Wu Xiaobo;Zhang Yongliang;Zhang Danyan;Yan Xiaolang

..............page:948-954

Effect of Manufacturing Tolerances on Characteristics of Arrayed Waveguide Grating Multiplexers
Qin Zhengkun;Ma Chunsheng;Li Delu;Zhang Haiming;Zhang Daming;Liu Shiyong

..............page:926-931

Method of Verification for Manufacturing in Sub-Wavelength Design
Wang Guoxiong;Yan Xiaolang

..............page:819-823

Large Scale VLSI Module Placement Using LFF Heuristics by Stages
Wei Shaojun;Dong Sheqin;Hong Xianlong;Wu Youliang

..............page:812-818

Designing Leakage-Tolerant and Noise-Immune Enhanced Low Power Wide OR Dominos in Sub-70nm CMOS Technologies
Guo Baozeng;Gong Na;Wang Jinhui

..............page:804-811

SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm
Li Ruizhen;Li Duoli;Du Huan;Hai Chaohe;Han Zhengsheng

..............page:796-803

Performance of an InP DHBT Grown by MBE
Su Shubing;Liu Xinyu;Xu Anhuai;Yu Jinyong;Qi Ming;Liu Xunchun;Wang Runmei

..............page:792-795

Bound Polaron in a Quantum Well Under an Electric Field
Chen Weili;Xiao Jinglin

..............page:787-791

Bias Current Compensation Method with 41.4% Standard Deviation Reduction to MOSFET Transconductance in CMOS Circuits
Mao Xiaojian;Yang Huazhong;Wang Hui

..............page:783-786

Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs
Yang Wei;Liu Xunchun;Zhu Min;Wang Runmei;Shen Huajun

..............page:765-768

Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate
Xue Chunlai;Yao Fei;Cheng Buwen;Wang Qiming

..............page:769-773

Sub-1V CMOS Voltage Reference Based on Weighted Vgs
Zhang Xun;Wang Peng;Jin Dongming

..............page:774-777

A Novel Offset-Cancellation Technique for Low Voltage CMOS Differential Amplifiers
Han Shuguang;Chi Baoyong;Wang Zhihua

..............page:778-782

Enhancement of Light Extraction of LED by Photonic Crystal Structures
Du Wei;Xu Xingsheng;Sun Zenghui;Lu Lin;Gao Junhua;Zhao Zhimin;Wang Chunxia;Chen Hongda

..............page:921-925

Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser
Lin Guijiang;Lai Hongkai;Li Cheng;Chen Songyan;Yu Jinzhong

..............page:916-920

Bifurcation and Dynamic Stability of a Light-Injection MQW Semiconductor Laser
Yan Senlin

..............page:910-915

Recombination Width and External Quantum Efficiency in Organic Electro-Phosphorescent Devices
Dai Guozhang;Li Hongjian;Dai Xiaoyu;Pan Yanzhi;Xie Qiang;Peng Jingcui

..............page:905-909

Development of a MEMS-Based RF Low-Phase-Noise Voltage Controlled Oscillator
Li Li;Zhao Zhengping;Zhang Zhiguo;Guo Wensheng;Lü Miao;Yang Ruixia

..............page:900-904

Characteristics of a Front-Illuminated Visible-Blind UV Photodetector Based on GaN p-i-n Photodiodes with High Quantum Efficiency
You Da;Tang Yingwen;Zhao Degang;Xu Jintong;Xu Yunhua;Gong Haimei

..............page:896-899

Design of Silicon Spiral Inductors Used for 5～6GHz Wireless LAN
Sun Longjie;Yang Bo;Guo Lihui

..............page:892-895

Breakdown Voltage Analysis for a Double Step Buried Oxide SOI Structure
Duan Baoxing;Zhang Bo;Li Zhaoji

..............page:886-891

Breakdown Characteristics of SOI LDMOS High Voltage Devices with Variable Low k Dielectric Layer
Luo Xiaorong;Li Zhaoji;Zhang Bo

..............page:881-885

Parameter Extraction of a Ⅲ-Ⅴ Compound HBT Model
Liu Jun;Sun Lingling

..............page:874-880

Numerical Simulation of Si/Si1-xGex Resonant Tunneling Diode at Room Temperature
Li Tao;Yu Zhiping;Wang Yan;Huang Lei;Xiang Cailan

..............page:869-873

Temperature Characteristics of AlGaN/GaN HEMTs Using C-V and TLM for Evaluating Temperatures
Wang Chong;Zhang Jinfeng;Yang Yan;Hao Yue;Feng Qian;Zhang Jincheng

..............page:864-868

A Static-State Model of NPT-IGBTs with Localized Lifetime Control
Fang Jian;Jiang Huaping;Qiao Ming;Zhang Bo;Li Zhaoji

..............page:857-863

Extraction of Equivalent Oxide Thickness for HfO2 High k Gate Dielectrics
Chen Yong;Zhao Jianming;Han Dedong;Kang Jinfeng;Han Ruqi

..............page:852-856

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering
Wang Guangwei;Ru Guoping;Zhang Jianmin;Cao Jihua;Li Bingzong

..............page:846-851

Energy Band Structure and Conducting Characteristics of ITO Films
Zhang Zhiguo

..............page:840-845

Average-Bond-Energy and Fermi Level on Metal-Semiconductor Contacts
Li Shuping;Wang Renzhi

..............page:834-839

Binding Energy of a Hydrogenic Impurity in a Finite Parabolic Quantum Well Under an External Electric Field
Zhao Fengqi;Sarula

..............page:830-833

Properties of Quasi-Two-Dimensional Strong-Coupling Magnetopolarons in Magnetic Fields
Eerdunchaolu;Wuyunqimuge;Xu Qiu;Bai Xufang

..............page:824-829