Chinese Journal of Semiconductors 2006 Issue 11 Impurity Distribution of Silicon Direct Bonding

Impurity Distribution of Silicon Direct Bonding
Chen Xin'an;Huang Qing'an

..............page:2051-2055

An ASK-Based IF Receiver for Wireless Endoscopy Capsule Systems
Yao Jinke;Chi Baoyong;Wang Zhihua

..............page:2046-2050

HVIC with Coupled Level Shift Structure
Qiao Ming;Fang Jian;Li Zhaoji;Zhang Bo

..............page:2040-2045

A 1V MNC Bandgap Reference with High Temperature Stability
Qin Bo;Jia Chen;Chen Zhiliang;Chen Hongyi

..............page:2035-2039

A Wide-Band CMOS Low-Noise Amplifier for TV Tuner Applications
Liao Youchun;Tang Zhangwen;Min Hao

..............page:2029-2034

A Rail-to-Rail Input/Output Amplifier Using Common-Gate Frequency Compensation
Wang Weizhi;Jin Dongming

..............page:2025-2028

Study of Uni-Traveling-Carrier Photodetectors
Zhu Haobo;Mao Luhong;Yang Zhan;Guo Weilian;Zhang Shilin;Liang Huilai

..............page:2019-2024

Small Signal Equivalent Circuit Model of Buried Tunnel Junction VCSEL Chips
Xu Guizhi;Hofmann W;Huang Hengpei;Zhang Tao;Xie Liang;Zhu Ninghua;Amann M C

..............page:2015-2018

Numerical Analysis of the Effect of a DBR with Graded Interfaces on the Resonant Cavity of a VCSEL
Wang Xiaodong;Wu Xuming;Wang Qing;Cao Yulian;He Guorong;Tan Manqing

..............page:2011-2014

Analytical Model for the Electric Field Distribution of an SOI High Voltage Device with a Compound Dielectric Layer
Luo Xiaorong;Li Zhaoji;Zhang Bo

..............page:2005-2010

A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET
Zhang Xuefeng;Xu Jingping;Zou Xiao;Zhang Lanjun

..............page:2000-2004

Characteristics of Groove-Gate MOSFETs
Cao Yanrong;Ma Xiaohua;Hao Yue;Yu Lei

..............page:1994-1999

Transient Thermal Effects of LDMOS in Switching Operation
Li Meizhi;Guo Chao;Chen Xingbi

..............page:1989-1993

A New AlGaN/GaN HEMT Semiempirical DC Model
Liu Dan;Chen Xiaojuan;Liu Guoguo;He Zhijing;Liu Xinyu;Wu Dexin

..............page:1984-1988

Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate
Luo Weijun;Chen Xiaojuan;Li Chengzhan;Liu Xinyu;He Zhijing;Wei Ke;Liang Xiaoxin;Wang Xiaoliang

..............page:1981-1983

Design and Fabrication of Gate-Type Resonant Tunneling Transistors
Guo Weilian;Liang Huilai;Song Ruiliang;Zhang Shilin;Mao Luhong;Hu Liuchang;Li Jianheng;Qi Haitao;Feng Zhen;Tian Guoping;Shang Yuehui;Liu Yongqiang;Li Yali;Yuan Mingwen;Li Xiaobai

..............page:1974-1980

Ohmic Contact for InP-Based HEMTs
Liu Liang;Yin Junjian;Li Xiao;Zhang Haiying;Li Haiou;He Zhijing;Liu Xunchun

..............page:1970-1973

Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures
yang jinghai; yang jing hai ; yang li li ; zhang yong jun ; liu wen yan ; wang dan dan ; lang ji hui ; zhao qing xiang

..............page:1945-1949

Influence of Reconstruction Defects on Dislocation Motion in Si
Yang Lijun;Meng Qingyuan;Li Chengxiang;Zhong Kangyou;Guo Licheng

..............page:1940-1944

Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP
Miao Shanshan;Zhao Youwen;Dong Zhiyuan;Deng Aihong;Yang Jun;Wang Bo

..............page:1934-1939

Band Structures of Si Nanowires with Different Surface Terminations
You Siyu;Wang Yan

..............page:1927-1933

Properties of Strong Coupling Bound Magnetopolarons in Quantum Dots with Unsymmetrical Parabolic Confinement Potential
Chen Shihua;Xiao Jinglin

..............page:1923-1926

Improved Statistical Interconnect Timing Analysis Considering Scattering Effect
Lin Saihua;Yang Huazhong;Luo Rong;Wang Hui

..............page:1918-1922

A 64-Step Gray Scale Driver Chip for a 132×64-Pixel Passive Matrix OLED
Liu Ming;Qin Bo;Xiao Wenyu;Zhong Huiming;Chen Liang;Liu Lifang;Jia Chen;Chen Zhiliang

..............page:1889-1893

Nonlinear Dynamical Behaviors in Flip-Chip Thermosonic Bonding
Han Lei;Zhong Jue

..............page:2056-2063

Electrochemical Capacitance-Voltage Characterization of Plasma-Doped Ultra-Shallow Junctions
Wu Huizhen;Ru Guoping;Zhang Yonggang;Jin C G;Mizuno B;Jiang Yulong;Qu Xinping;Li Bingzong

..............page:1966-1969

Measurement of Thermal Conductivity of Ultra-Thin Single Crystal Silicon Film Using Symmetric Structure
Zhang Hao;Lü Zhichao;Tian Lilin;Tan Zhimin;Liu Litian;Li Zhijian

..............page:1961-1965

Effect of Substrate Structure on the Performance of a Silicon On-Chip Spiral Inductor
Xue Chunlai;Yao Fei;Cheng Buwen;Wang Qiming

..............page:1955-1960

Microstructure of an InGaN/GaN Multiple Quantum Well LED on Yi (111) Substrate
Li Cuiyun;Zhu Hua;Mo Chunlan;Jiang Fengyi

..............page:1950-1954

Digital Coarse Tuning Loop for Wide-Band Fast-Settling Dual-Loop Frequency Synthesizers
Liu Junhua;Liao Huailin;Yin Jun;Huang Ru;Zhang Xing

..............page:1911-1917

Analysis of Si/GaAs Bonding Stresses with the Finite Element Method
He Guorong;Yang Guohua;Zheng Wanhua;Wu Xuming;Wang Xiaodong;Cao Yulian;Wang Qing;Chen Lianghui

..............page:1906-1910

Investigations of Key Technologies for 100V HVCMOS Process
Song Limei;Li Hua;Du Huan;Xia Yang;Han Zhengsheng;Hai Chaohe

..............page:1900-1905

An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices
Yu Hejun;Yu Jinzhong;Chen Shaowu

..............page:1894-1899