Chinese Journal of Semiconductors 2006 Issue 10 A p-GaN/Al0.35Ga0.65N/GaN Quantum-Well Ultraviolet Schottky Photodetector

A p-GaN/Al0.35Ga0.65N/GaN Quantum-Well Ultraviolet Schottky Photodetector
You Da;Xu Jintong;Tang Yingwen;He Zheng;Xu Yunhua;Gong Haimei

..............page:1861-1865

An Ultralow-Voltage,Low-Power Baseband Processor for UHF RFID Tags
He Yan;Hu Jianyun;Min Hao

..............page:1866-1871

Optical Gain and Upconversion in Er3+-Yb3+ Co-Doped Phosphate Glass Waveguide Amplifiers
Zhang Dan;Liu Ke;Zhang Daming;Cheng Chuanhui;Zhang Xizhen;Zhang Haiming;Pan Yubin

..............page:1857-1860

Analysis of the Unbalanced State of an Interferometer Based on an SOA
Li Yajie;Wu Chongqing;Wang Yongjun;Li Yun;Ji Jianghui

..............page:1851-1856

Design and Optimization of SOI Piezoresistive Microcantilever Sensors for Use in Surface Stress Measurement
Zhuang Zhiwei;Wang Zheyao;Liu Litian

..............page:1844-1850

CMOS Implementation of a Wideband Low Phase Noise PLL Frequency Synthesizer
Chen Zuotian;Wu Xuan;Tang Shoulong;Wu Jianhui

..............page:1838-1843

Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures
Xia Jiaozhen;Lu Hui;Wang Pu;Xu Xiaofeng;Du Minggui

..............page:1763-1766

Defects and Their Influence on Properties of Bulk ZnO Single Crystal
Wei Xuecheng;Zhao Youwen;Dong Zhiyuan;Li Jinmin

..............page:1759-1762

Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots
Li Zhixin;Xiao Jinglin

..............page:1755-1758

Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC
Xiao Zhiqiang;Hong Genshen;Zhang Bo;Liu Zhongli

..............page:1750-1754

A Current-Mode DC-DC Buck Converter with High Stability and Fast Dynamic Response
Chen Dongpo;He Lenian;Yan Xiaolang

..............page:1742-1749

A Novel Clock Feedthrough Frequency Compensation for Fast-Settling of Folded-Cascode OTA
Ning Ning;Yu Qi;Wang Xiangzhan;Dai Guanghao;Liu Yuan;Yang Mohua

..............page:1737-1741

A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor
Yu Jinyong;Yan Beiping;Su Shubing;Liu Xunchun;Wang Runmei;Xu Anhuai;Qi Ming;Liu Xinyu

..............page:1732-1736

2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs
Ji Feng;Xu Jingping;Lai P T;Chen Weibing;Li Yanping

..............page:1725-1731

Fabrication of a Silicon-Based Microprobe for Neural Interface Applications
Sui Xiaohong;Zhang Ruoxin;Pei Weihua;Lu Lin;Chen Hongda

..............page:1703-1706

A Low-Power High-Frequency CMOS Peak Detector
Li Xuechu;Gao Qingyun;Qin Shicai

..............page:1707-1710

A New Method to Investigate InGaAsP Single-Photon Avalanche Diodes Using a Digital Sampling Oscilloscope
Liu Wei;Yang Fuhua;Wu Meng

..............page:1711-1716

Polar Quasi-Confined Optical Phonon Modes in Wurtzite Quasi-One-Dimensional GaN/Alx Ga1-xN Quantum Well Wires
Zhang Li

..............page:1717-1724

Passive Component Models for GaAs MMICs
Shen Huajun;Chen Yanhu;Yan Beiping;Yang Wei;Ge Ji;Wang Xiantai;Liu Xinyu;Wu Dexin

..............page:1872-1879

Temperature Analysis of Electrothermal Microactuators with a Nodal Analysis Model Built Based on the Weighted Residue Method
Li Rengang;Huang Qing'an;Li Weihua

..............page:1880-1886

A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer
Luo Xiaorong;Li Zhaoji;Zhang Bo

..............page:1832-1837

A Novel Semi-Insulation Bonding SOI Structure
Tan Kaizhou;Feng Jian;Liu Yong;Xu Shiliu;Yang Mohua;Li Zhaoji;Zhang Zhengfan;Liu Yukui;He Kaiquan

..............page:1828-1831

Ohmic Contact to an AlGaN/GaN Heterostructure
Yang Yan;Wang Wenbo;Hao Yue

..............page:1823-1827

Optimization of Breakdown Voltage and On-Resistance Based on the Analysis of the Boundary Curvature of the Drain Region in RF RESURF LDMOS
Chi Yaqing;Hao Yue;Feng Hui;Fang Liang

..............page:1818-1822

A New SOI-LDMOS with Folded Silicon for Very Low On-Resistance
Duan Baoxing;Zhang Bo;Li Zhaoji

..............page:1814-1817

Analysis and Design of 10Gb/s,0.2μm GaAs PHEMT Trans-Impedance Amplifiers
Cai Shuicheng;Wang Zhigong;Gao Jianjun;Zhu En

..............page:1808-1813

Ku-Band 20W GaAs Power PHEMT
Zhong Shichang;Chen Tangsheng

..............page:1804-1807

An X-Band PHEMT MMIC Power Amplifier
Zhang Shujing;Yang Ruixia;Wu Jibin;Yang Kewu

..............page:1800-1803

Laser Post-Treated Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin Film Transistors
Meng Zhiguo;Wong Man;Wu Chunya;Li Juan;Kwok H S;Xiong Shaozhen;Zhang Fang

..............page:1794-1799

Piezoresistive Properties of Resonant Tunneling Diodes
Mao Haiyang;Xiong Jijun;Zhang Wendong;Xue Chenyang;Sang Shengbo;Bao Aida

..............page:1789-1793

Planarizing Deposited SiO2 Thin Films Using ISSG Annealing Technology
Tao Kai;Sun Zhenhai;Sun Ling;Guo Guochao

..............page:1785-1788

Effects of Metal Cr Barrier on the Performance of Flexible Cu(In,Ga)Se2 Solar Cells Deposited on Stainless Steel Substrate
Zhang Li;He Qing;Xu Chuanming;Xue Yuming;Wang Chunjing;Shi Chengying;Xiao Jianping;Li Changjian;Sun Yun

..............page:1781-1784

Fabrication of Silicon-Based PZT Films Compatible with MEMS
Li Junhong;Wang Chenghao;Huang Xin;Xu Lian

..............page:1776-1780

Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution
Zhang Xuhui;Tao Chunlan;Zhang Fujia;Liu Yiyang;Zhang Haoli

..............page:1771-1775

Plasma Enhanced Chemical Vapor Deposition and Ultraviolet Luminescence of Nanocrystalline 6H-SiC Thin Films
Yu Wei;Cui Shuangkui;Lu Wanbing;Wang Chunsheng;Fu Guangsheng

..............page:1767-1770