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Chinese Journal of Semiconductors
0253-4177
2005 Issue 11
Fabrication of a Novel Si-Based Thermo-Optical Tunable Flat-Top Filter with Narrow Band
Zuo Yuhua;Cai Xiao;Mao Rongwei;Wang Qiming
..............page:2218-2222
Characteristic Analysis on High Power GaInP/AlGalnP Semiconductor Laser Diodes
Xu Yun;Guo Liang;Cao Qing;Song Guofeng;Gan Qiaoqiang;Yang Guohua;Li Yuzhang;Chen Lianghui
..............page:2213-2217
A RF Integrated Inductor with CoZrO Ferrite Thin Film
Yang Chen;Liu Feng;Ren Tianling;Liu Litian;Feng Haigang;Wang Zihui;Long Haibo;Yu Jun
..............page:2208-2212
A New Type of CMOS Temperature Sensor
Zhang Xun;Wang Peng;Jin Dongming
..............page:2202-2207
Simulation of EI-Interface Voltage in an EIS-Type Semiconductor Biochemical Sensor
Jia Yunfang;Niu Wencheng;Zhang Fuhai;Liu Guohua;Yu Mei
..............page:2196-2201
Small Amplitude Approximation and Dynamic Stabilities of a Strained Superlattice
Luo Shiyu;Shao Mingzhu
..............page:2097-2101
AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz
Li Xianjie;Zeng Qingming;Zhou Zhou;Liu Yugui;Qiao Shuyun;Cai Daomin;Zhao Yonglin;Cai Shujun
..............page:2049-2052
A Wavelength Tunable DBR Laser Integrated with an Electro Absorption Modulator by a Combined Method of SAG and QWI
Zhang Jing;Li Baoxia;Zhao Lingjuan;Wang Baojun;Zhou Fan;Zhu Hongliang;Bian Jing;Wang Wei
..............page:2053-2057
An Efficient Test Data Compression Technique Based on Codes
Fang Jianping;Hao Yue;Liu Hongxia;Li Kang
..............page:2062-2068
Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD
Shen Wenjuan;Wang Jun;Duan Yao;Wang Qiyuan;Zeng Yiping
..............page:2069-2073
Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD
Liang Song;Zhu Hongliang;Pan Jiaoqing;Wang Wei
..............page:2074-2079
Characteristics of a 0.1μm SOI Grooved Gate pMOSFET
Shao Hongxu;Sun Baogang;Wu Junfeng;Zhong Xinghua
..............page:2080-2084
A Fractional-N CMOS DPLL with Self-Calibration
Liu Sujuan;Yang Weiming;Chen Jianxin;Cai Liming;Xu Dongsheng
..............page:2085-2091
Infrared Absorption of Spatially Ordered Quantum Dot Superlattices
Sun Yongwei;Ma Wenquan;Yang Xiaojie;Qu Yuhua;Hou Shihua;Jiang Desheng;Sun Baoquan;Chen Lianghui
..............page:2092-2096
Theoretical Analysis of M×N Microring Resonator Array on Silicon
Yan Xin;Ma Chunsheng;Xu Yuanzhe;Wang Xianyin;E Shulin;Zhang Daming
..............page:2223-2229
A 10bit, 50Msample/s, 57.6mW CMOS Pipeline A/D Converter
Huang Feipeng;Wang Jingguang;He Jirou;Hong Zhiliang
..............page:2230-2235
Analysis of Phase Relations in MMI Couplers with a Positional Number of 2
Sun Yiling;Jiang Xiaoqing;Yang Jianyi;Wang Minghua
..............page:2236-2240
Generation of Polynomial Response Surface Models for Sizing of an Analog IC
Gao Xuelian;Shi Yin
..............page:2241-2247
A High Performance Differential Reference Voltage Generator Used in ADC
Li Dan;Ye Jinghua;Hong Zhiliang
..............page:2248-2253
Analysis and Improvement on the High Frequency Effect of TO Packaging for Photodiodes
Zhang Shangjian;Liu Jian;Wen Jimin;Zhu Ninghua
..............page:2254-2258
Corrosive Effect of Slurry Inhibitor on Copper Wafer
Li Xiujuan;Jin Zhuji;Kang Renke;Guo Dongming;Su Jianxiu
..............page:2259-2263
Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method
Ye Zhizhen;Xu Weizhong;Zeng Yujia;Jiang Liu;Zhao Binghui;Zhu Liping;Lü Jianguo;Huang Jingyun;Wang Lei;Li Xianhang
..............page:2264-2266
A Ku Band HFET MMIC VCO with Source Terminal Tuning
Wang Shaodong;Gao Xuebang;Wu Hongjiang;Wu Ahui
..............page:2191-2195
Ⅲ-Ⅴ Compound HBT Modeling
Liu Jun;Sun Lingling
..............page:2175-2181
Modeling and Simulation of Hot-Carrier Degradation in Deep-Submicron pMOSFET's
Li Kang;Hao Yue;Liu Hongxia;Fang Jianping;Xue Hongmin
..............page:2169-2174
An Analytical Model for Polysilicon Quantization in MOS Devices
Dai Yuehua;Chen Junning;Ke Daoming;Sun Jiae;Xu Chao
..............page:2164-2168
A Breakdown Model of Thin Drift Region LDMOS with a Step Doping Profile
Li Qi;Zhang Bo;Li Zhaoji
..............page:2159-2163
A Novel Structure and Its Breakdown Mechanism of a SOI High Voltage Device with a Shielding Trench
Luo Xiaorong;Li Zhaoji;Zhang Bo;Guo Yufeng;Tang Xinwei
..............page:2154-2158
A Breakdown Voltage Model of a PSOI Structure with a p-Type Buried Layer
Duan Baoxing;Zhang Bo;Li Zhaoji
..............page:2149-2153
Hot Electron Tunneling Mechanism of Current Collapse in GaN HFET
Xue Fangshi
..............page:2143-2148
UHV/CVD Grown Strain Relaxed SiGe Buffer Layers for Strained Silicon
Wu Guibin;Ye Zhizhen;Liu Guojun;Zhao Binghui;Cui Jifeng
..............page:2139-2142
Preparation of Molybdenum-Doped Indium Oxide Thin Films by Channel Spark Ablation
Huang Li;Li Xifeng;Zhang Qun;Miao Weina;Zhang Li;Zhang Zhuangjian;Hua Zhongyi
..............page:2133-2138
Solution Growth of Morphology Controllable ZnO One-Dimensional Nanorods and Microrods
Zhang Linli;Guo Changxin;Chen Jiangang;Hu Juntao
..............page:2127-2132
Mathematical Morphology Based Algorithm to Measure Quantum Dots from AFM Photos
Jin Feng;Lu Huaxiang;Li Kai;Chen Yonghai;Wang Zhanguo
..............page:2120-2126
Piezoresistive Effect of Polysilicon Films at High Temperature
Huo Mingxue;Liu Xiaowei;Zhang Dan;Wang Xilian;Song Minghao
..............page:2115-2119
Application of a SiGe Multi-Quantum Well Grown by UHV-CVD for Thermophotovoltaic Cells
Sun Weifeng;Ye Zhizhen;Zhu Liping;Zhao Binghui
..............page:2111-2114
Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon
Jiang Huihua;Yang Deren;Tian Daxi;Ma Xiangyang;Li Liben;Que Duanlin
..............page:2107-2110
Effect of the Surface of HgCdTe Epilayers on Infrared Transmission Spectra
Zhang Xiaolei;Kong Jincheng;Ma Qinghua;Wu Jun;Yang Yu;Ji Rongbin
..............page:2102-2106