Chinese Journal of Semiconductors 2004 Issue 9 Design Considerations and Implementation for Low Power Transconductance-Capacitance Filter with On-Chip Automatic Tuning

Design Considerations and Implementation for Low Power Transconductance-Capacitance Filter with On-Chip Automatic Tuning
ma de qun ; cui fu liang ; he jie ; huang lin ; hong zhi liang

..............page:1186-1192

Investigation on Coplanar Stripline on Silicon Substrate and Its Application
li fu hua ; dai wen liang ; li zheng fan ; wang yu yang

..............page:1181-1185

A Full-Differential CMOS Pipelined A/D Convertor
zhu zhen ; ma de qun ; ye zuo hua ; hong zhi liang

..............page:1175-1180

Method of Leakage Power Simulation and Calculation Based on Full Custom IP Design
zhang feng ; zhou yu mei ; huang ling yi

..............page:1169-1174

Photo-Controlled Oscillator Based on DUBAT
bo chun yu ; li shu rong ; wu jing ; li dan

..............page:1164-1168

High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching
xu yun ; cao qing ; sun yong wei ; ye xiao jun ; hou shi hua ; guo liang ; chen liang hui

..............page:1079-1083

A Novel NeuMOS Source Follower Cell with High Precision
Yang Yuan;Gao Yong;Yu Ningmei;Liu Mengxin

..............page:1074-1078

Low Voltage CMOS Gilbert Mixers for Bluetooth Transceiver
cui fu liang ; ma de qun ; huang lin ;ye jinghua; ye zuo hua ; guo zuo ; hong zhi liang

..............page:1066-1073

0.25μm SOI RF nMOSFETs Depleted Partially
Li Junfeng;Yang Rong;Zhao Yuyin;Chai Shumin;Liu Ming;Xu Qiuxia;Qian He

..............page:1061-1065

CMOS Dual-Band Low Noise Amplifer
FENG Dong;Shi Bingxue

..............page:1055-1060

Numerical and Experimental Study of Localized Lifetime Control LIGBT by High Dose He Ion Implantation
Fang Jian;Tang Xinwei;Li Zhaoji;Zhang Bo

..............page:1048-1054

Thermodynamic Modeling and Phase Diagrams of Hexagonal and Cubic GaN Single-Crystal Film Growth by ECR-PEMOCVD Method
Wang Sansheng;GU Biao

..............page:1041-1047

Numerical-Analytical Model of 6H-SiC Schottky Barrier Source/Drain nMOSFET
tang xiao yan ; zhang yi men ; zhang yu ming ; zuo jin xia ; chen rui biao

..............page:1159-1163

A Novel Deformable Mirror Based on MEMS Technology
yu hong bin ; chen hai qing ; zuo zi min ; zhang da cheng ; li zuo

..............page:1154-1158

Macromodel for Single Electron Transistor Based on Non-Linear Dependent Voltage Source
lv ming ; jiang jian fei ; cai zuo yu

..............page:1148-1153

850nm Vertical Cavity Surface Emitting Laser Fabricated by Large Inclined Angle Ion Implantation Using Tungsten as Mask and Its Modulation Character
wang hai zuo ; du guo tong ; xu cheng dong ; song jun feng ; tang jun ; chen hong da ; liu yu ; zhu ning hua

..............page:1143-1147

GaAs-Based Enhanced-Mode Metamorphic High Electron Mobility Transistor by Using Buried Pt-Schottky Gate
chen xiao jian ; wu xu ; li fu xiao ; jiao gang

..............page:1137-1142

Breakdown Characteristics of 4H-SiC Microwave Power MESFETs
lv hong liang ; zhang yi men ; zhang yu ming ; yang lin an

..............page:1132-1136

Indium Doping to Improve Heterojunction of AlGaAs/GaAs and Its Application
shang xun zhong ; wang wen chong ; guo li wei ; wu shu dong ; niu ping juan ; huang zuo ; zhou jun ming

..............page:1128-1131

Investigation of Strained Si/SiGe-OI Heterostructure with High Resolution Electron Microscope
ma tong da ; tu hai ling ; shao bei ling ; chen chang chun ; huang wen zuo

..............page:1123-1127

Design and Numerical Analysis of Anti-Reflection Coating for Space High-Efficiency Si Solar Cells
yang wen hua ; wu ding xiang ; li hong bo

..............page:1118-1122

Influence of Doping on Growth of Silicon Window Layers
guo qun chao ; geng xin hua ; zhang jian xin ; liu guo biao

..............page:1114-1117

Investigation of Deep Trap Center of AlN Grown on Si Substrate
deng yong zuo ; zheng you ; zhou chun hong ; kong yue zuo ; chen peng ; ye jian dong ; gu shu lin ; shen bo ; zhang rong ; jiang ruo zuo ; han ping ; shi yi

..............page:1109-1113

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth
li dong sheng ; yang de ren ;s.pizzini

..............page:1104-1108

Degradation of pMOSFETs with Ultrathin Oxide and Different HALO Dose
Zhao Yao;Hu Jing;Xu Mingzhen;Tan Changhua

..............page:1097-1103

High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD
zhang yong xing ; sun guo sheng ; wang lei ; zhao wan shun ; gao xin ; zeng yi ping ; li jin min ; li si yuan

..............page:1091-1096

An Improved Description of Characteristics Length in Substrate Current Model for Submicron and Deep-Submicron LDD MOSFET's
Yu Chunli;Yang Lin'an;Hao Yue

..............page:1084-1090