Chinese Journal of Semiconductors 2004 Issue 10 Dependence of Hole Mobility in PDSOI PMOSFET on Isolation Process

Dependence of Hole Mobility in PDSOI PMOSFET on Isolation Process
zhao hong chen ; hai chao he ; han zheng sheng ; qian he

..............page:1345-1348

Analog Circuit Behavioral Modeling via Wavelet Collocation Method with Auto-Companding
wang jian ; zeng zuo ; tao jun ; tong jia zuo

..............page:1338-1344

Application of 0.2μm T-Shaped Gate Technology in 10Gbps DWDM Driver Circuits
zhang hai ying ; liu xun chun ; luo ming xiong ; liu hong min ; wang run mei

..............page:1335-1337

7.3GHz 0.18μm CMOS Injection Phase-Locked Loop
wang jun feng ; feng jun ; yuan zuo ; xiong ming zhen ; wang zhi gong

..............page:1331-1334

Analyses of Relations between Modulating Area Structure and Switch Speed and Power Consumption of SOI Thermo-Optic Switch Based on Finite Element Method
liu jing wei ; wang xiao long ; chen shao wu ; yu jin zhong

..............page:1324-1330

Cavity Polaritons of GaAs Quantum in Three-Dimension Semiconductor Microcavity
liu wen kai ; lin shi ming ; an yan wei ; zhang cun shan

..............page:1319-1323

SOI Thermo-Optic Modulator
wang zhang tao ; fan zhong chao ; xia jin song ; chen shao wu ; yu jin zhong

..............page:1315-1318

Optical Properties of MgxZn1-xO Alloy and Mg0.08Zn0.92O/ZnO Heterostructure Grown by P-MBE
wu chun xia ; lv you ming ; shen de zhen ; li bing hui ; zhang zhen zhong ; liu yi chun ; zhang ji ying ; fan xi wu

..............page:1258-1263

Ferromagnetism of GaAs/AlGaAs Superlattice Implanted with Mn at Room Temperatures and 350℃
wang chun hua ; chen yong hai ; wang zhan guo

..............page:1253-1257

Applying Double Electric Fields to Avoid Deteriorating Movable Sensitive Parts in MEMS During Anodic Bonding
yang dao hong ; xu chen ; shen guang di

..............page:1249-1252

Design Concept for Key Parameters of Reverse Conducting GCT
wang cai lin ; gao yong

..............page:1243-1248

A 30 Finger Microwave Power SiGe HBT with 23V BVCBO and fT 7GHz
xiong xiao yi ; zhang wei ; xu jun ; liu zhi hong ; chen chang chun ; huang wen zuo ; li xi you ; zhong tao ; qian pei xin

..............page:1238-1242

800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser
wang yong gang ; ma zuo yu ; cao shi ying ; zhang zhi gang

..............page:1233-1237

Design Guideline of Ultra Thin Body MOSFET
wang wen ping ; huang ru ; zhang guo yan

..............page:1227-1232

Strained Si Channel Heterojunction pMOSFET Using 400℃ LT-Si Technology
mei ding lei ; yang zuo hua ; li jing chun ; yu qi ; zhang jing ; xu wan jing ; tan kai zhou

..............page:1221-1226

A Novel Technique of Parameter Extraction for Short Channel Length LDD MOSFETs
yu chun li ; hao yue ; yang lin an

..............page:1215-1220

Synthesis of One-Dimensional ZnO Nanorods by Oxidating Zinc Films Deposited with Magnetron Sputtering
shi li wei ; li yu guo ; wang qiang ; xue cheng shan ; wang shu yun

..............page:1211-1214

Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides
sun guo sheng ; zhang yong xing ; gao xin ; wang jun xi ; wang lei ; zhao wan shun ; wang xiao liang ; zeng yi ping ; li jin min

..............page:1205-1210

HfO2 Gate Dielectrics for Future Generation of CMOS Device Application
H.Y.Yu;J.F.Kang;Ren Chi;M.F.Li;D.L.Kwong

..............page:1193-1204

Design of PM Polarizer Based on SiO2/Si PLC Waveguide
li wei ; liu de ming ; huang de xiu

..............page:1311-1314

Extraction of Ultra-Thin Gate Oxide Thickness
tan jing rong ; xu xiao yan ; huang ru ; cheng xing zhi ; zhang xing

..............page:1306-1310

MIS Contacts in CdSe Nuclear Radiation Detectors
jin ying rong ; zhu shi fu ; zhao bei jun ; chen song lin ; he fu qing

..............page:1301-1305

Analytical Model Aimed at Source/Drain Series Resistance for 6H-SiC PMOSFET
zuo jin xia ; zhang yi men ; zhang yu ming

..............page:1296-1300

Design of 1GHz 0.5μm CMOS Low Noise Amplifier
yao fei ; cheng bu wen

..............page:1291-1295

AlGaN/GaN HEMT Device Optimization and I-V Characteristics
dai long ; wang yan ; yu zhi ping ; tian li lin

..............page:1285-1290

Super AlGaN/GaN Two-Dimensional Electron Gas Materials and HEMT Devices on Sapphire Substrates
zhang jin cheng ; hao yue ; wang chong ; wang feng xiang

..............page:1281-1284

A Model Describing Annealing of Si Clusters
yu min ; huang ru ; zhang xing ; wang yang yuan ;kunihiro suzuki;hideki oka

..............page:1277-1280

Dissolution of Oxygen Precipitates in Silicon Treated by Rapid Thermal Process
lin lei ; yang de ren ; ma xiang yang ; li li ben ; zuo duan zuo

..............page:1273-1276

Forbidden Reflections in the Single Crystal Si Substrate
huang dai hui ; li wei ; feng liang huan ; zhu ju mu

..............page:1269-1272

Analysis of Nitrogen-Doped Diamond-Like Carbon Films by Electrochemical C-V Method
cheng xiang ; chen chao ; xu fu chun ; liu tie lin

..............page:1264-1268