0253-4177
2003 Issue 7
Relativity of Radiation Damage in Fluorinated CMOS Operational Amplifiers
ren di yuan ; lu zuo ; yu xue feng ; guo qi ; zhang guo qiang ; hu yu hong ; wang ming gang ; zhao wen kui
ren di yuan ; lu zuo ; yu xue feng ; guo qi ; zhang guo qiang ; hu yu hong ; wang ming gang ; zhao wen kui
..............page:780-784
A Clock-Feedthrough Compensation Technology for Switched-Current Circuits
li yong ping ; shi yin
li yong ping ; shi yin
..............page:775-779
A DC-DC Converter Integrated Easily Using Single Variable Steps Feedback Algorithm
yuan gang ; shi yin
yuan gang ; shi yin
..............page:769-774
A Transmitter for High-Speed Serial Data Communication
ye zuo hua ; chen yi hui ; guo zuo ; hong zhi liang
ye zuo hua ; chen yi hui ; guo zuo ; hong zhi liang
..............page:763-768
Design and Simulation of High-Voltage CMOS Devices Compatible with Standard CMOS Technologies
liu kui wei ; han zheng sheng ; qian he ; chen ze rui ; yu yang ; rao jing shi ; xian wen ling
liu kui wei ; han zheng sheng ; qian he ; chen ze rui ; yu yang ; rao jing shi ; xian wen ling
..............page:758-762
Design of InGaP/GaAs HBT Microwave Power Amplifier
qian yong xue ; liu xun chun
qian yong xue ; liu xun chun
..............page:753-757
A New Method for Determining PHEMT Equivalent Circuit
xie li gang ; zhang bin
xie li gang ; zhang bin
..............page:748-752
Steady-State and Transient Model of TIGBT
zhang li ; lu yao hua ; tian li lin
zhang li ; lu yao hua ; tian li lin
..............page:743-747
Investigation of Diamond/Ti/Ni/Au Metallization Scheme Applied in Semiconductor Lasers for Thermal Management
pan cun hai ; li jun yue ; hua ji zhen ; wang shao yan
pan cun hai ; li jun yue ; hua ji zhen ; wang shao yan
..............page:737-742
Influence of Postdeposition Annealing on Crystallinity of Zinc Oxide Films
lv jian guo ; ye zhi zhen ; huang jing yun ; zhao bing hui ; wang lei
lv jian guo ; ye zhi zhen ; huang jing yun ; zhao bing hui ; wang lei
..............page:729-736
Theoretical Study of Electron Transport in ZnO
guo bao zeng ; wang yong qing ; zong xiao ping ; sun rong xia ; song deng yuan ;umberto ravaioli;maritin staedele
guo bao zeng ; wang yong qing ; zong xiao ping ; sun rong xia ; song deng yuan ;umberto ravaioli;maritin staedele
..............page:723-728
Crystal Defects in Semi-Insulation Gallium Arsenide
xu yue sheng ; zhang chun ling ; liu cai chi ; tang lei ; wang hai yun ; hao jing chen
xu yue sheng ; zhang chun ling ; liu cai chi ; tang lei ; wang hai yun ; hao jing chen
..............page:718-722
Raman Scattering of GaP1-xNx Alloys
gao yu lin ; lv yi jun ; zheng jian sheng ; zhang yong ;mascarenhas a; xin huo ping ; du wu qing
gao yu lin ; lv yi jun ; zheng jian sheng ; zhang yong ;mascarenhas a; xin huo ping ; du wu qing
..............page:714-717
Dynamical Localization of an Exciton Confined in Two Quantum Dot Molecular Driven by an AC Electric Field
liu cheng shi ; ma ben ; wang li min
liu cheng shi ; ma ben ; wang li min
..............page:707-713
Non-Destructive Parameters Extraction for a Novel IGBT SPICE Model and Verified with Measurements
Yuan Shoucai;Zhu Changchun
Yuan Shoucai;Zhu Changchun
..............page:702-706
Theoretical Investigation of Pinch off Voltage of Box-Like Ion-Implanted 4H-SiC MESFETs
Wang Shouguo;Zhang Yimen;Zhang Yuming
Wang Shouguo;Zhang Yimen;Zhang Yuming
..............page:697-701
High Slope Efficiency and High Power 850nm Oxide-Confined Vertical Cavity Surface Emitting Lasers
Yue Aiwen;Zhang Wei;Zhan Dunping;Wang Renfan;SHEN Kun;Shi Jing
Yue Aiwen;Zhang Wei;Zhan Dunping;Wang Renfan;SHEN Kun;Shi Jing
..............page:693-696
Analysis and Design of an Accelerometer Fabricated with Porous Silicon as Sacrificial Layer
Zhou Jun;Wang Xiaohong;YAO Pengjun;Dong Liang;Liu Litian
Zhou Jun;Wang Xiaohong;YAO Pengjun;Dong Liang;Liu Litian
..............page:687-692
Solving a Model of Inversion Layer Quantization Effects in Deep Submicron MOSFETs with Artificial Neural Networks
Lin Rong;Zhou Xin;LIU Boan
Lin Rong;Zhou Xin;LIU Boan
..............page:680-686
A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress
Yang Guoyong;Wang Jinyan;Huo Zongliang;Mao Lingfeng;Tan Changhua;Xu Mingzhen
Yang Guoyong;Wang Jinyan;Huo Zongliang;Mao Lingfeng;Tan Changhua;Xu Mingzhen
..............page:673-679