Chinese Journal of Semiconductors 2001 Issue 6 Super High Speed Polysilicon Emitter Integrated Circuit Technology

Super High Speed Polysilicon Emitter Integrated Circuit Technology
zhang li chun ; ni xue wen ; wang yang yuan

..............page:811-816

Technology of Partially Depleted CMOS/SOI
liu xin yu ; sun hai feng ; chen huan zhang ; zuo huan zhang ; hai chao he ; liu zhong li ; he zhi jing ; wu de zuo

..............page:806-810

Device Model Parameters for 2.5-10Gb/s HEMT Modulator Driver IC
gao jian jun ; gao zuo xin ; wu de zuo

..............page:800-805

A High Performance DDFS Suitable for Digital Vedio Encoder
shen bo ; zhang zuo zuo

..............page:796-799

10GHz Gain-Switched DFB Laser with Low Timing Jitter
li yu hua ; lou cai yun ; han ming ; wang zhao xin ; gao yi zhi

..............page:792-795

A CMOS High-Speed Dual-Modulus Prescaler with New Filp-Flop
zhang chun zuo ; li yong ming ; chen hong yi

..............page:788-791

Analysis of Diffraction Efficiency of the Holographic Optical Elements in VCD and DVD
liang wan guo ; zheng wan hua ; xie jing hui ; liang en zhu ; chen liang hui ; li hui ; liu hao

..............page:784-787

Influence of Temperatures and Radiation Dose Rate on CMOSDevice Characteristic Parameter
he bao ping ; yao yu juan ; peng hong lun ; zhang zheng xuan

..............page:779-783

Influence of Backsurface Ar+ Bombardment on theCharacteristics of n-MOSFET
huang mei qian ; li guan qi ; zeng shao hong

..............page:774-778

Hot-Carrier Effects in Deep Sub-Micron MOSFET's
liu hong xia ; hao yue ; sun zhi

..............page:770-773

Direct Tunneling Relaxation Spectroscopy in Ultrathin Gate Oxide MOSStructures Under Constant Pressure Stress
wei jian lin ; mao ling feng ; xu ming zhen ; tan chang hua

..............page:765-769

Simulation on Current Rating of GAT Type High-Speed High-Voltage Power Transistors
wang zhe ; kang bao wei ; wu yu ; cheng xu

..............page:760-764

Electrical Characterization of n-Type 6H-SiC MOS Capacitors
wang zuo zuo ; liu zhong li ; liang gui rong ; liang xiu qin ; ma hong zhi

..............page:755-759

Growth of 3C-SiC from Silicon Solvent and Restrain of 6H-SiC
ma jian ping ; lu gang ; lei tian min ; chen zhi ming

..............page:751-754

Influence of Deviation from Stoichiometry on Crystallinic Qualities
jiang feng yi ; yao dong min ; mo chun lan ; wang li ; li peng ; xiong chuan bing ; peng xue xin

..............page:746-750

Influence of Edge Damping on Quality Factor of Laterally-Driven Microstructures
zhang bin ; huang qing an

..............page:741-745

Ohmic Contact Performance Between Ti/Al/Ti/Au and AlGaN
zhang jin wen ; zhang tai ping ; wang zuo ; ning bao jun ; wu guo ying

..............page:737-740

POLY/SIS/Si Interface Evaluation by Differential Conductance(R□)
zheng yi jun ; jia yong hua

..............page:733-736

Doping Characteristics of Mg in InGaAlP and GaP
ji gang ; li yue sheng ; cao yong ming ; hua ming

..............page:729-732

Optical Phonon Raman Spectroscopy in SiC Nanorods
yan yan ; huang fu min ; zhang shu lin ; zhu bang fen ; shang er zuo ; fan shou shan

..............page:726-728

Intermixing of Asymmetrical Coupling Double QuantumWell via Combinatorial Ion Implantation withPhoto-Modulated Reflectance Spectrum
zuo zhong lin ; lu wei ; chen ping ping ; li zhi feng ; liu ping ; yuan xian zhang ; cai zuo ying ; xu wen lan ; shen xue chu ; chen chang ming ; zhu de zhang ; hu jun ; li ming qian

..............page:721-725

Effects of Lattice Vibration on Self-Trapping Energy ofPolaron of Electron-Surface Phonons Strong-Couplingin Polar Semiconductor Slab
li shu shen ; xiao jing lin

..............page:715-720

Proton Irradiation and Thermal Annealing of GaAs Solar Cells
xiang xian bi ; du wen hui ; liao xian bo ; chang xiu lan

..............page:710-714

DC-20GHz RF MEMS Switch
zhu jian ; lin jin ting ; lin li qiang

..............page:706-709

A New Quasi 2-Dimensional Analytical Approach to Predicting RingJunction Voltage,Edge Peak Fields and Optimal Spacing of PlanarJunction with Single Floating Field Limiting Ring Structure
he jin ; zhang xing ; huang ru ; wang yang yuan

..............page:700-705

The Influence of Rapid Thermal Annealing on SiGe/SiMultiple-Quantum Wells p-i-n Photodiodes
li cheng ; yang qin qing ; wang hong jie ; wang yu tian ; yu jin zhong ; wang qi ming

..............page:695-699

Schottky Barrier Characteristics of Polycrystalline and EpitaxialCoSi2/n-Si(111) Contacts Formed by Solid State Reaction
zuo shi zuo ; ru guo ping ; qu xin ping ; li bing zong

..............page:689-694

Effects of Interdiffusion on Luminescence of InAs/GaAs Quantum Dots Covered by InGaAs Overgrowth Layer
wei yong qiang ; liu hui yun ; xu bo ; ding ding ; liang ji ben ; wang zhan guo

..............page:684-688

Quasi-Thermodynamic Model of MOVPE Growth of GaxAlyIn1-x-yN
lu da cheng ; duan shu kun

..............page:677-683