Chinese Journal of Semiconductors 2001 Issue 3 300mm Crystal　Silicon’s　Growth　Technology

300mm Crystal　Silicon’s　Growth　Technology
ZHANG Guo-hu;Wu Zhi-qiang;FANG Feng;QIN Fu;CHANG Qing;ZHOU Qi-gang;TU Hai-ling

..............page:383-386

A Programmable Hamming Neural Network Feature Extractor
LI Guo-xing;SHI Bing-xue

..............page:378-382

Circuit Model for TW Semiconductor Laser Amplifiers
CHEN Wei-you;WANG Ai-jun;ZHANG Ye-jin;LIU Cai-xia;LIU Shi-yong

..............page:373-377

Monocrystalline Silicon and Ge-Doped Si Growth with Ring Permanent Magnetic Field
ZHANG Wei-lian;SUN Jun-sheng;ZHANG En-huai;LI Jia-xi

..............page:309-312

Mechanical Strength Research by Three-Point Bending Method in Nitrogen-Doped Silicon Single Crystal
Wang Gan;YANG De-ren;LI Dong-sheng;YANG Hui;LI Li-ben;Que Duan-lin

..............page:304-308

Optical　Properties　of　C60　Thin　Films　Deposited on　Fluorophlogopite　Substrates
ZOU Yun-juan;ZHANG Xing-wang;SONG Xue-mei;YAN Hui;CHENG Guang-hua

..............page:299-303

Excited-State Lasing of InAs/GaAs Self-Organized Quantum Dot
WANG Hui;NIU Zhi-chuan;WANG Hai-long;WANG Xiao-dong;FENG Song-lin

..............page:295-298

Measurement of Minority Carrier Lifetime on Silicon Wafers with Collinear Four-Probe Array
ZHOU Quan-de

..............page:292-294

Distribution of Carriers in GeSi/Si Multiple Hetero-Epilayers
ZHANG Xiu-lan;ZHU Wen-zhen;HUANG Da-ding

..............page:288-291

Ballistic Transport in Y-Typed Quantum Channels
WANG Chuan-kui;JIANG Zhao-Tan

..............page:283-287

A New Congestion-Driven Placement Algorithm Based on Cell Inflation
HOU Wen-ting;YU Hong;HONG Xian-long;CAI Yi-ci;WU Wei-min;GU Jun

..............page:275-282

A Novel Barrier to Copper Metallization by Implanting Nitrogen into SiO2
ZHANG Guo-hai;XIA Yang;QIAN He;GAO Wen-fang;YU Guang-hua;LONG Shi-bing

..............page:271-274

Fabrication of 4H-SiC Merged PN-Schottky Diodes
ZHANG Yu-ming;ZHANG Yi-men;P.Alexandrov;J.H.Zhao

..............page:265-270

Low-Cost, High-Reflectivity Silicon-on-Reflector for Optoelectronic Device Application
LI Cheng;YANG Qin-qing;WANG Hong-jie;WANG Qi-ming

..............page:261-264

Equivalent Doping Transformation Method for Predicting Breakdown Voltage and Peak Field at Breakdown of Epitaxial-Diffused Punch-Through Junction
HE Jin;ZHANG Xing;HUANG Ru;WANG Yang-Yuan

..............page:256-260

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition
JIA Hong-yong;LIN Hui-wang;CHEN Pei-yi;TSIEN Pei-Hsin

..............page:251-255

Adiabatic CMOS Switching Circuits Adopting Two-Phase Power-Clock Supply and Avoiding Floating Output
HANG Guo-qiang;Wu Xun-wei

..............page:366-371

Novel High-Performance CMOS Current Comparator Circuit
CHEN Lu;SHI Bing-xue;LU Chun

..............page:362-365

Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation
WAN Xin-heng;ZHANG Xing;HUANG Ru;GAN Xue-wen;WANG Yang-Yuan

..............page:358-361

Fabrication of Si Radiation Detector with　Plane Technology
ZHANG Tai-ping;ZHANG Lu;NING Bao-jun;TIAN Da-yu;LIU Shi-mei;WANG Wei;ZHANG Jie-tian;GUO Zhao-qiao;CHEN Shi-yuan

..............page:354-357

S-Band 0.3W AlGaAs/GaAs HBT for Power Application
YAN Bei-ping;Zhang He-Ming;Dai Xian-Ying

..............page:350-353

Very High Speed Poly-Si Emitter Bipolar Transistor and Circuit
ZHANG Li-chun;GAO Yu-zhi;JIN HAI-YAN;NI Xue-wen;MO Bang-xian;NING Bao-jun;LUO Kui;YE Hong-fei;ZHAO Bao-ying;ZHANG Guang-qin

..............page:345-349

Characterization Method for Proportional Difference Characteristic of MOSFET Devices
WANG Jin-Yan;XU Ming-zhen;TAN Chang-hua

..............page:340-344

Effects of DBR on Properties of Semiconductor Microcavity
LIU Bao-li;WAGN　Bing-shen;XU Zhong-Ying

..............page:335-339

An SOI MOSFET Model for Analog Circuit Design
LIAO Huai-lin;ZHANG Xing;HUANG Ru;WANG Yang-Yuan

..............page:329-334

Proportional Difference Characteristics of Complete Current Model
YANG Cun-yu;TAN Chang-hua;XU Ming-zhen

..............page:322-328

Low Temperature Silicon and Silicon Germanium Doping Epitaxy by HV/CVD
LIU Zhi-nong;JIA Hong-yong;LUO Guang-li;CHEN Pei-yi;LIN Hui-wang;TSIEN Pei-Hsin

..............page:317-321

Preparation of Single Phase Hexagonal GaN on GaAs (100) Substrate by MOCVD
SUN Yi-jun;LI Ai-zhen;QI Ming

..............page:313-316