Chinese Journal of Semiconductors 2001 Issue 10 Design of Low Voltage Charge-Recovery Logic Circuit

Design of Low Voltage Charge-Recovery Logic Circuit
li xiao min ; chou yu lin ; chen chao shu

..............page:1352-1356

VLSI Design and Implemetation of A Low Power Microcontroller Using Asynchronous Logic
yu ying ; zhou lei ; zuo zuo

..............page:1346-1351

Reliability Model of IC Interconnect Based on Defect Distribution Statistics
chen tai feng ; hao yue ; zhao tian xu ; zhang jin cheng

..............page:1343-1345

Underfill Delarnination and Solder Joint Failure of Flip Chip on Board
xu bu lu ; zhang qun ; cai xia ; huang wei dong ; xie xiao ming ; cheng zhao nian

..............page:1335-1342

Plasma Oscillation in Purity GaAs
zheng yi yang

..............page:1329-1334

A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose
wan xin heng ; zhang xing ; gao wen zuo ; huang ru ; wang yang yuan

..............page:1325-1328

An Analytical Temperature-Dependent Kink Effect Model of PD SOI NMOSFET
zhang hai peng ; wei tong li ; feng yao lan ; yao zuo ; song an fei

..............page:1320-1324

A New Degradation Model of Gate Current of pMOSFET
zhang jin cheng ; hao yue ; zhu zhi zuo ; liu hai bo

..............page:1315-1319

Substrate Hot Hole Coupled TDDB Effects of Thin Gate
liu hong xia ; hao yue ; zhang jin cheng

..............page:1310-1314

A New Lifetime Prediction Model for n-MOSFETs with Ultrathin Gate Oxides Under Hot-Carrier Stress
mu fu chen ; xu ming zhen ; tan chang hua ; duan xiao rong

..............page:1306-1309

Influence of Structure Parameters on the Hot-Carrier-Effect Immunity and Short-Channel-Effect Suppression in Deep-Sub-Micron Grooved Gate PMOSFET
ren hong xia ; hao yue

..............page:1298-1305

Sensitivity Analysis of the Back Interface Trap-Induced R-G Current Obtained by a Lateral SO1 Forward Gated-Diode
Bich-Yen Nguyen;Mark Foisy;HE Jin;ZHANG Xing;HUANG Ru;Huang Aihua;Bich-Yen Nguyen;Mark Foisy;Zhang Yahui;YU Shan;JIA Lin

..............page:1292-1297

Effects of Size and Number of Thermocouples on Device Performance in a Infrared Silicon Based ThermoDile
li zhi huai ; feng ming ; liu yue ying ; shen de xin ; lu jian guo ; zhu zi qiang

..............page:1287-1291

Determination of Oxygen in Heavily Doped CZ-Silicon
liu pei dong ; huang xiao rong ; shen yi jun ; li li ben ; zuo duan zuo

..............page:1284-1286

Optimal Temperature of Crystallization and Photoluminescence of SiC/Si(100) Film Prepared by Pulsed ArF Excimer Laser Deposition
wang yu xia ; cao ying ; he hai ping ; tang hong gao ; wang lian wei ; huang ji po ; lin cheng lu

..............page:1277-1283

Breakdown Characteristics of Nitride Ultra-Thin Gate Oxide
han de dong ; zhang guo qiang ; ren di yuan

..............page:1274-1276

SiOx Mediated Epitaxial Ternary Silicide (Co1-xNix)Si2
han yong zhao ; li bing zong ; ru guo ping ; qu xin ping ; cao yong feng ; xu zuo lei ; jiang yu long ; wang lian wei ; zhang rong yao ; zhu jian hao

..............page:1269-1273

Structure and Characteristics of C60 Thin Films Grown in Argon Atmosphere
zhang hai yan ; chen yi ming ; wu chun yan ; he yan yang ; wang jin hua ; zhu yan juan

..............page:1264-1268

Surface Structure and 1.54μm Light Emission of Silicon Plus Erbium Dual-Implanted Thermal SiO2/Si Thin Film
xu fei ; xiao zhi song ; cheng guo an ; yi zhong zhen ; zeng yu zuo ; zhang tong he ; gu zuo zuo

..............page:1258-1263

Luminescence of Si-Based C60 Mesoporous Compound Material
yang yang ; zou jian ping ; chen hui lan ; bao xi mao

..............page:1255-1257

A Novel High-Voltage Detector Integrated into SPIC by Using FFLR
HAN Lei;Ye Xingning;Chen Xingbi

..............page:1250-1254

The Jitter Performance Comparison Between DLL and PLL-Based RF CMOS Oscillators
Li Jincheng;Qiu Yulin

..............page:1246-1249

Substrate Hot Holes Injection Induced Breakdown Characteristics of Thin Gate Oxides
LIU Hongxia;HAO Yue

..............page:1240-1245

Temperature Dependence of Performance of 6H-SiC Unipolar Power Devices
HE Jin;ZHANG Xing

..............page:1235-1239

Characteristics of Refractory Metal Gate MOS Capacitor with Improved Sputtering Process for Gate Electrode
LI Ruizhao;Xu Qiuxia

..............page:1231-1234