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Journals   A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Chinese Journal of Semiconductors
0253-4177
2000 Issue 8
Super-Fast Fully Depleted CMOS/SOI Ring Oscillator with Delay Time of 45ps
LIU Xin-yu;SUN Hai-feng;HAI Chao-he;WU De-xin
..............page:830-832
High Power In(Ga)As/GaAs Quantum Dot Laser
WANG Zhan-guo;LIU Feng-qi;LIANG Ji-ben;XU Bo;DING Ding;GONG Qian;HAN Qin
..............page:827-829
2-D Hierarchical Compaction Algorithm for VLSI Layout Reuse
ZHAO Zi-jian;CAI Yi-ci;HONG Xian-long;HUANG Song-jue;LIU Yi;XIE Min
..............page:822-826
Optimum Design of Power and Ground Topology Subject to Reliability and Noise Constraints
CHEN Xu-yun;ZHENG Jin-shan;ZHOU Ting;ZHANG Qian-ling;HUANG Jin
..............page:816-821
An Optimized VLSI Implementation of IDCT for MPEG
CHEN Xu-yun;ZHENG Jin-shan;ZHOU Ting;ZHANG Qian-ling
..............page:810-815
1.8kbps MBE-LPC Vocoder Implemented by Fixed-Point DSP
LI Yong-ming;CHEN Hong-yi;ZHU Yi-ting
..............page:803-809
Simple Method for Designing 1×8 Arrayed-Waveguide Grating Multi/Demultiplexers
OU Hai-yan;LEI Hong-bing;YANG Qin-qing;YU Jin-zhong;WANG Qi-ming;HU Xiong-wei
..............page:798-802
Characteristics of Double Schottky Barrier GaAs Particle Detectors
SHAO Chuan-fen;SHI Chang-xin
..............page:792-797
Optimum Design of Base Region in Punch-Through Structure Used in Conductivity-Modulated Power Devices
HE Jin;ZHANG Xing;HUANG Ru;DU Cai-xia;HAN Lei;WANG Xin
..............page:786-791
Ultra-Thin Metal-Silicide/Si Schottky Contacts Studied by Ballistic Electron Emission Microscopy
RU Guo-ping;QU Xin-ping;ZHU Shi-yang;Li Bing-zong
..............page:778-785
Preparation and Characterization of Nanocrystalline SnO2 Thin Film
SUO Hui;XIANG Xi-qing;ZHU Yu-mei;RUAN Sheng-ping;ZHANG Tong;LIU Bing-bing;XIU Bao-kun;WANG Li-jun
..............page:774-777
Si-Based Nanoporous Alumina Film-Sodium 3-Hydroxyl-2-Naphthlenecarboxylate Fluorescent Compound Material
YI Zheng-ping;ZOU Jian-ping;YANG Yang;CHEN Hui-lan;BAO Xi-mao
..............page:770-773
Influence of Boron Atom on Growth of Ge Quantum Dots on Si(100)
ZHOU Xing-fei;SHI Bin;JIANG Wei-rong;HU Dong-zhi;FAN Yong-liang;GONG Da-wei;ZHANG Xiang-jiu;JIANG Zui-min
..............page:765-769
Influence of Buffer Structure on Relaxation of Stress in Si1-xGexby Raman Spectra
LI Dai-zong;CHENG Bu-wen;HUANG Chang-jun;WANG Hong-jie;YU Zhuo;ZHANG Chun-hui;YU Jin-zong;WANG Qi-ming
..............page:760-764
Valence Band Denstiy of states of Transition Metal Silicides Studied by Soft X-Ray Emission Spectroscopy
WANG Jin-liang;WANG Tian-min
..............page:754-759
Fame:A Fast Detailed Placement Algorithm for Standard Cell Layout Based on Mixed Mincut and Enumeration*
YAO B0;HOU Wen-ting;HONG Xian-long;CAI Yi-ci
..............page:744-753
Analysis of Characteristic Impedance and Effective Dielectric Constant of Asymmetrical Coplanar Waveguide with Finite Dimensions
SUN Wei;HE Wei-yu;ZHANG Da-ming;YANG Han;YI mao-bin
..............page:739-743
Optoelectronic Smart Pixels Comprising Flip-Chip-Bonded GaAs/AIGaAs MQW Detectors and Modulators on Silicon CMOS Circuit
CHEN Hong-da;LIANG Kun;ZENG Qing-ming ;LI Xian-jie;CHEN Zhi-biao ;DU Yun;WU Rong-han
..............page:735-738
Quasi-Thermodynamic Model of MOVPE of InAIN
LU Da-Chen;DUAN Shu-kun
..............page:729-734
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