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Chinese Journal of Semiconductors
0253-4177
1994 Issue 3
(pt ji qi gui hua wu )/ gui jie mian de shen neng ji yan jiu
ding sun an ; xu zhen jia
..............page:149
gaas/al0.33ga0.67as duan zhou qi chao jing ge zhong neng dai bu lian xu xing sui ya li de bian hua
liu zhen xian ; li guo hua ; han he xiang ; wang zhao ping
..............page:163
cd1-xmnxte/cdte duo liang zi zuo de guang fan she yan jiu
zhang ling jun ; dan wei ; jiang shan ; shen xue chu
..............page:171
gao ling min du di an dian liu gaas liang zi zuo hong wai tan ce qi
zhong zhan tian ; zhou xiao chuan ; du quan gang ; zhou ding xin ; wu rong han ; wang sen ; li cheng fang ; zuo mei yun ; xu jun ying ; zhu qin sheng
..............page:188
icb fang fa sheng chang cdte dan jing bao mo de yan jiu
feng jia zuo ; zhang fang wei ; fan yu dian ; li heng de
..............page:194
li yong dian zi shu chan za ji shu zhi bei wei mi ya wei mi p-mosfet qi jian
li xiu qiong ; hai chao he ; yang jun
..............page:204
cdse/znte chao jing ge wei guan jie mian mo de duo sheng zi la man guang pu yan jiu
hou yong tian ; jin ying ; zhang shu lin ; li jie ; yuan shi zuo
..............page:208
sige/si liang zi zuo jie gou cai liao de ji zi fa guang pu
huang da ming ; yang min ; sheng zuo ; lu xue kun ; gong da wei ; zhang xiang jiu ; wang xun
..............page:213
Determination of Interstitial Oxygen Concentration in Heavily Doped Silicon by Combination of Neutron Irradiation and FTIR
MA Zhenyu;Wang Qiyuan;Zan Yude;Cai Tianhai;Yu Yuanhuan;Lin Lanying
..............page:217