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Chinese Journal of Semiconductors
0253-4177
1989 Issue 1
fu tu
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tai kong sheng chang chan te-gaas dan jing de jie gou que xian guan ce
jiang si nan ; fan zuo wen ; li cheng ji ; lin lan ying
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ji guang jie jing a-si h soi li zi zhu ru he kuai su tui huo
gu qing ; bao xi mao
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quan ji cheng shi liu liang chuan gan qi
huang jin biao ; li bin ; tong qin yi ; zhou ming
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cextor yi ge shi he mos ji cheng dian lu gong yi de dian lu ti qu cheng xu
song hua ; tang zuo shan ; zhang kai he ; ling zuo ting
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vlsi zhong shuang ceng bu xian dao kong shu de you hua suan fa
li ying meng ; tang zuo shan
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pt-si jie mian de tuo pian guang pu xiang ying ji ptsi de guang xue xing zhi
chen tu pei ; huang bing zhong
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si- n-gaas zheng dian zi zuo mei te xing de yan jiu
wu feng mei ; shen de xun ; zuo min kang ; chen ling ; tang jie ; zhang de hong
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in0.25 ga0.75 as/gaas ying bian yi zhi jie de li zi gou dao fen xi
yin shi duan ; wu chun wu ; zhang jing ping ; liu jia rui ; zhu pei ran
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gui biao mian yuan zi xin tai neng ji de hua xue wei yi
xing yi rong ; zhong xue fu
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zn se1-xsx zhong 3d guo du jin shu za zhi shi zhu neng ji
gu yi ming ; huang ming zhu ; wang ke lin
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