Determination of Shallow Impurity Concentration in Detector-grade Silicon by FT-IR Spectroscopy at 4.2K
Zhang Jichang Pohl lnstitute for Solid State Physics;Physics Dept.;Tongji University;Shanghai;China.Wu Jiangen Qu Fengyuan Laboratory for Semiconductor Physics;Physics Dept.;Fudan University;Shanghai;China.Ye Hongjuan Xiao Jincai Yu Zhiyi Lu Wei Laboratory for Infrared Physics;Shanghai Institute of Technical Physics;Academia Siniea.