Resistance switching in oxides with inhomogeneous conductivity
Shang Da-Shana)b);Sun Ji-Ronga);Shen Bao-Gena);and Wuttig Matthias b) a) Beijing National Laboratory for Condensed Matter Physics and Institute of Physics;Chinese Academy of Sciences;Beijing 100190;China b) I.Physikalisches Institut;RWTH Aachen University;52056 Aachen;Germany
..............page:5-22
Elastic scattering of surface states on three-dimensional topological insulators
Wang Jinga)b);and Zhu Bang-Fena)c) a) State Key Laboratory of Low-Dimensional Quantum Physics;and Department of Physics;Tsinghua University;Beijing 100084;China b) Department of Physics;McCullough Building;Stanford University;Stanford;California 94305-4045;USA c) Institute of Advanced Study;Tsinghua University;Beijing 100084;China
..............page:53-61
Transport properties of topological insulators films and nanowires
Liu Yia);Ma Zhenga);Zhao Yan-Fei a);Meenakshi Singh b);and Wang Jiana)b a) International Center for Quantum Materials;School of Physics;Peking University;Beijing 100871;China b) The Center for Nanoscale Science and Department of Physics;The Pennsylvania State University;University Park;Pennsylvania 16802-6300;USA
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..............page:139-144
A new coupled-map car-following model based on a transportation supernetwork framework
Yao Jinga)b);Huang Jing-Yia);Chen Guan-Rong c);and Xu Wei-Shenga) a) Department of Control Science and Engineering;Tongji University;Shanghai 201804;China b) Department of Electronic and Computer Engineering;The Hong Kong University of Science and Technology;Hong Kong SAR;China c) Department of Electronic Engineering;City University of Hong Kong;Hong Kong SAR;China
..............page:145-153
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..............page:197-202
Steganalysis and improvement of a quantum steganography protocol via a GHZ4 state
Xu Shu-Jiang a)b)c);Chen Xiu-Bo a)c);Niu Xin-Xin a);and Yang Yi-Xian a) a) Information Security Center;State Key Laboratory of Networking and Switching Technology;Beijing University of Posts and Telecommunications;Beijing 100876;China b) Shandong Provincial Key Laboratory of Computer Network;Shandong Computer Science Center;Jinan 250014;China c) State Key Laboratory of Information Security;;Beijing 100093;China
..............page:203-206
..............page:207-209
..............page:210-214
..............page:215-221
The vibron dressing in α-helicoidal macromolecular chains
D.evizovia)b);S. Galovia)b);A. Reshetnyakc);and Z. Ivia)a)University of Belgrade;Vina Institute of Nuclear Sciences Laboratory for Theoretical and Condensed Matter Physics;P. O. Box 522;11001 Belgrade;Serbiab)Joint Institute for Nuclear Research Bogoliubov Laboratory for Theoretical Physics;Dubna;Russiac)Laboratory of Non-Linear Media Physics;Institute of Strength Physics and Materials Science;Tomsk;634021;Russia
..............page:222-231
..............page:232-236
The mean first passage time of a three-level atomic optical bistable system subjected to noise
Wei Yong-Gang a)c);Zeng Chun-Hua a)b);Wang Hua a)c);Li Kong-Zhai a)c);and Hu Jian-Hanga)c) a) Engineering Research Center of Metallurgical Energy Conservation and Emission Reduction;Ministry of Education;Kunming University of Science and Technology;Kunming 650093;China b) Faculty of Science;Kunming University of Science and Technology;Kunming 650093;China c) Faculty of Metallurgy and Energy Engineering;Kunming University of Science and Technology;Kunming 650093;China
..............page:237-242
..............page:243-249
..............page:250-260
..............page:261-265
Network evolution driven by dynamics applied to graph coloring
Wu Jian-Shea);Li Li-Guang a);Wang Xiao-Hua b);Yu Xin a);and Jiao Li-Cheng a)a) Key Laboratory of Intelligent Perception and Image Understanding of Ministry of Education of China;224# Xidian University;2# Taibai South Road;Xi’an 710071;China b) Aeronautical Computing Technique Research Institute;Xi’an 710068;China
..............page:266-271
..............page:272-280
..............page:281-288
..............page:289-292
The KdV-Burgers equation in a modified speed gradient continuum model
Lai Ling-Linga);Cheng Rong-Jun b);Li Zhi-Peng c);and Ge Hong-Xiaa) a) Faculty of Science;Ningbo University;Ningbo 315211;China b) Ningbo Institute of Technology;Zhejiang University;Ningbo 315100;China c) College of Electronics and Information Engineering;Tongji University;Shanghai 200092;China
..............page:293-297
..............page:298-303
..............page:304-309
Differences in the adsorption of FePc on coinage metal surfaces
R.A.Rehman a)b);Cai Yi-Liang b);Zhang Han-Jie b);Wu Keb);Dou Wei-Dong b);Li Hai-Yang b);He Pi-Mob);Bao Shi-Ning b) a) Physics Department;Zhejiang University;Hangzhou 310027;China b) Physics Department;Forman Christian College University;Lahore-Pakistan
..............page:310-317
..............page:318-325
..............page:326-333
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..............page:356-359
Experimental verification on tightly focused radially polarized vortex beams
Du Fu-Ronga);Zhou Zhe-Haia);Tan Qiao-Feng b);Yang Chang-Xib);Zhang Xiao-Qing a);and Zhu Lian-Qing a) a) Beijing Engineering Research Center of Optoelectronic Information and Instruments;Beijing Information Science and Technology University;Beijing 100192;China b) State Key Laboratory of Precision Measurement Technology and Instruments;Tsinghua University;Beijing 100084;China
..............page:360-363
..............page:364-369
Atom dynamical dissipation in the laser cavity with quasimode
Jiang Wen-Ying a)b);Zhao Zhi-Mina);Tian Tianc);Zheng Lid);and Zheng Tai-Yu c) a) College of Automation Engineering;Nanjing University of Aeronautics and Astronautics;Nanjing 210016;China b) School of Electronic Engineering and Automation;Guilin University of Electronic Technology;Guilin 541004;China c) School of Physics;Northeast Normal University;Changchun 130024;China d) Information Science and Engineering College;Dalian Polytechnic University;Dalian 116034;China
..............page:370-372
Unified analytical treatments of qubit-oscillator systems
He Shu a);Zhang Yu-Yub);Chen Qing-Hu c)d);Ren Xue-Zao a);Liu Tao a);and Wang Ke-Lin e) a) School of Science;Southwest University of Science and Technology;Mianyang 621010;China b) Center for Modern Physics;Chongqing University;Chongqing 400044;China c) Department of Physics;Zhejiang University;Hangzhou 310027;China d) Center for Statistical and Theoretical Condensed Matter Physics;Zhejiang Normal University;Jinhua 321004;China e) Department of Modern Physics;University of Science and Technology of China;Hefei 230026;China
..............page:373-383
Enhancing stationary optomechanical entanglement with the Kerr medium
Zhang Dan a);Zhang Xiao-Ping b);and Zheng Qiang c) a) School of Chemistry and Material Science;Guizhou Normal University;Guiyang 550001;China b) Space Science Institute;Macau University of Science and Technology;Avenida Wai Long;Macau;China c) School of Mathematics and Computer Science;Guizhou Normal University;Guiyang 550001;China
..............page:384-388
..............page:389-392
..............page:393-398
..............page:399-404
Crystalline undulator radiation and sub-harmonic bifurcation of system
Luo Xiao-Huaa)b);He Wei a);Wu Mu-Ying c);Shao Ming-Zhu c);and Luo Shi-Yu c) a) School of Electrical Engineering;Chongqing University;Chongqing 400044;China b) Library;Chongqing Jiaotong University;Chongqing 400074;China c) College of Electronic Engineering;Dongguan University of Technology;Dongguan 523808;China
..............page:405-408
..............page:409-413
A picosecond widely tunable deep-ultraviolet laser for angle-resolved photoemission spectroscopy
Zhang Feng-Fenga)c);Yang Fenga);Zhang Shen-Jin a);Xu Zhi a)c);Wang Zhi-Mina);Xu Feng-Liang a);Peng Qin-Jun a);Zhang Jing-Yuan a);Wang Xiao-Yang b);Chen Chuang-Tian b);and Xu Zu-Yan a) a) Research Center for Laser Physics and Technology;Key Laboratory of Functional Crystal and Laser Technology;Technical Institute of Physics and Chemistry;Chinese Academy of Sciences;Beijing 100190;China b) Beijing Center for Crystal R & D;Key Laboratory of Functional Crystal and Laser Technology;Technical Institute of Physics and Chemistry;Chinese Academy of Sciences;Beijing 100190;China c) Graduate University of Chinese Academy of Sciences;Beijing 100190;China
..............page:414-416
Characterization of spectral hole depth in Tm3+:YAG within the cryogenic temperature range
Chen Leia)b);Ma Xiu-Ronga)b);Wang Wei a)b);Zhang Shuang-Gen b);Mu Kuan-Lin a)b);Wang Xia-Yang a)b);and Zhang Shi-Yu a)b) a) Engineering Research Center on Communication Devices;School of Computer and Communication Engineering;Tianjin University of Technology;Tianjin 300384;China b) Tianjin Key Laboratory of Film Electronic and Communication Device;School of Electronic Information Engineering;Tianjin University of Technology;Tianjin300384;China
..............page:417-421
..............page:422-427
..............page:428-434
..............page:435-438
..............page:439-443
Thermal conductivity of a kind of mesoporous silica SBA-15
Huang Cong-Lianga);Feng Yan-Hui a);Zhang Xin-Xin a);Li Jing a);and Wang Ge b) a) School of Mechanical Engineering;University of Science and Technology Beijing;Beijing 100083;China b) School of Materials Science and Engineering;University of Science and Technology Beijing;Beijing 100083;China
..............page:444-448
..............page:449-457
..............page:458-462
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..............page:476-478
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..............page:485-488
..............page:489-494
..............page:495-497
Thermal stability and electrical properties of copper nitride with In or Ti
Du Yuna)b);Gao Lei b);Li Chao-Rongc);and Ji Ai-Lingb) a) Information Engineering School;Hangzhou Dianzi University;Hangzhou 310018;China b) State Key Laboratory for Surface Physics;Institute of Physics;Chinese Academy of Sciences;Beijing 100190;China c) School of Sciences;Zhejiang Sci-Tech University;Hangzhou 310018;China
..............page:498-503
..............page:504-510
..............page:511-515
..............page:516-521
..............page:522-525
..............page:526-533
Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
Yu Ying-Xiaa);Lin Zhao-Jun a) Luan Chong-Biao a);Wang Yu-Tang a);Chen Hong b);and Wang Zhan-Guo c) a) School of Physics;Shandong University;Jinan 250100;China b) Beijing National Laboratory for Condensed Matter Physics;Institute of Physics;Chinese Academy of Sciences;Beijing 100190;China c) Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:534-539
..............page:540-545
..............page:546-552
..............page:553-556
..............page:557-560
Tunable interface anisotropy in a Pt/Co1-xFex/Pt multilayer
Chen Yong-Yong a);Shi Zhonga)b);Zhou Shi-Ming a)b);Rui Wen-Bin c);and Du Jun c) a) Surface Physics State Laboratory and Department of Physics;Fudan University;Shanghai 200433;China b) School of Physics Science and Engineering;Tongji University;Shanghai 200092;China c) Department of Physics;Nanjing University;Nanjing 210093;China
..............page:561-564
..............page:565-568
..............page:569-573
..............page:574-579
Planar terahertz metamaterial with three-resonant frequencies
Chen Zhi a) and Zhang Ya-Xin b) a) National Key Laboratory of Science and Technology on Communication;University of Electronic Science and Technology of China;Chengdu 611731;China b) Terahertz Science and Technology Research Center;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:580-583
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..............page:646-649
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..............page:655-659
..............page:660-663
Non-isothermal kinetics of styrene-butadiene-styrene asphalt combustion
Wu Ke a);Zhu Kai a);Han Jun a)c);Wang Jin-Chang a);Huang Zhi-Yi a);and Liang Peib) a) Faculty of Engineering;Zhejiang University;Hangzhou 310027;China b) College of Optical and Electronic Technology;China Jiliang University;Hangzhou 310018;China c) Jiangsu Bao Li Asphalt Co.LTD;Wuxi 214422;China
..............page:664-669
The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells
Li Liang a);Zhao De-Ganga);Jiang De-Sheng a);Liu Zong-Shun a);Chen Pinga);Wu Liang-Lianga);Le Ling-Cong a);Wang Hui b);and Yang Hui a)b) a) State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China b) Suzhou Institute of Nano-tech and Nano-bionics;Chinese Academy of Sciences;Suzhou 215123;China
..............page:670-673
..............page:674-684