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Vacuum Science and Technology
0253-9748
2004 Issue 6
Growth of Net-Shaped Boron Nitride Nanorods
lu xiaomin; wang lei and yang deren* (state key lab of silicon materials; zhejiang university; hangzhou; 310027; china)
..............page:45-47
Influence of Plasma Polymerization on Polymer Deposition Rate
pan changjiang; huang nan*; liu ruirui; wang jin and sun hong (institute of biomaterials & surface engineering; southwest jiaotong university; c hengdu; 610031; china)
..............page:55-58
Structures of Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at Room Temperature
wang xiaoqiang; chen qiang; li junshuai; yang dingyu and he deyan* (department of physics; lanzhou university; lanzhou; 730000; china)
..............page:65-68
Development of Broad Beam RF Ion Source for Thin Film Growth
you dawei*; huang xiaogang; ren jingxue and li anjie (space science and application research center; chinese academy of sciences; beiji ng; 100080; china)
..............page:51-54
Development of Pressure Leak Calibration System
wang jinsuo1; xu hong2; hu yangli2 and tang jingyuan2 (1.shanghai jiaotong university; shanghai1; 200030; china; 2.shanghai institute of measurement and testing technology; shanghai; 200040; chin a)
..............page:39-41
Structures and Properties of ZnO Films Grown by Ion Beam Sputtering
liu jian* and li xiaohui (department of physics; inner mongolia university; hohhot; 010021; china)
..............page:30-33
Piezoresistance Characteristics of Ytterbium Thin Film Grown by Magnetron Sputtering
teng lin; yang bangchao*; du xiaosong and zhou hongren (college of microelectronics and solid state electronics; uestc; chengdu; 610054; ch ina)
..............page:72-74,80
Design of Large Aluminum Vacuum Brazing Furnace —Major Specifications and Heating Control Program
peng ping (lanzhou vacuum equipment co.; ltd.lanzhou; 730050; china)
..............page:75-80
Reactive Ion Etching of SiO_2 in Planar Lightwave Circuit Fabrication
zhou libing*; luo fengguang and cao mingcui (state key lab.of laser technology; huazhong university of science and technology ; wuhan; 430074; china)
..............page:34-38
A Writable,Erasable and Readable Molecular-Based Electrical Bistable Device
xu wei*; guo peng; lu yinxiang; liu chunming; cai yongzhi and hua zhongyi (department of materials science; fudan university; shanghai; 200433; china)
..............page:1-3
Study of Normally-On Driving Under-gate Field Emission Display Panel
zhong xuefei*; fan zhaowen; yin hanchun and wang baoping (department of electronic engineering; southeast university; nanjing; 210096; china)
..............page:4-7,38
Influence of Substrate Bias on Properties of TiN Films with X-ray Photoelectro n Spectroscopy and Atomic Force Microscopy Studies
jiang ning 1; 2; shen yaogen2; zhang hanjie1 and bao shining 1* (1.physics department; zhejiang university; hangzhou 310027; china; 2.department of manufacturing engineering & engineering management; city unive rsity of hong kong; hong kong sar; china)
..............page:59-64
Photoluminescence of Amorphous Si Films Prepared by Atmospheric Pressure Chemi cal Vapor Deposition
liu yong*; xiao ying; wo yinhua; song chenlu and han gaorong (state key laboratory for silicon materials; materials science and engineering de partment of zhejiang university; hangzhou; 310027; china)
..............page:69-71
Growth and Characterization of ZnO Films by Laser Molecular Beam Epitaxy
he yongning 1*; zhu changchun1; hou xun 1; 2; 3; zhang jingwen1; yang xi aodong2; xu qing an2 and zeng fanguang1 (1.department of electronic science and technology; the school of electronic & information; xi an jiaotong university; xi an; 710049; china; 2.state key laboratory of transient optics technology; xi an institute of optics and precision mechanics; xi an; 710068; china; 3.school of physics and information optoelectronics; henan university; kaifen g; 475001; china)
..............page:20-23
Growth of Fe~(3+) lon-Sensitive Ge-Sb-Se-Fe Film by Vacuum Deposition
zhang haifang; du piyi*; weng wenjian; han gaorong and zhao gaoling (state key lab of silicon materials; zhejiang university; hangzhou; 310027; china)
..............page:42-44,47
Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication
zhu liping*; ye zhizhen; zhao binghui; ni xianfeng and zhao zhe (state key laboratory of silicon material; zhejiang university; hangzhou 310027; ch ina)
..............page:48-50
Growth of Silver Cluster on Si(111) 7×7 Reconstructed Surface —— a Scanning Tunneling Microscopy Study
bai yajun; shen ziyong; hou shimin*; zhao xingyu and xue zengquan (department of electronics; peking university; beijing; 100871; china)
..............page:11-14
Super-Hydrophilic TiO_2/SiO_2 Composite Thin Films Prepared by RF Magnetron Co-Sputtering
shen jie; wo songtao; cai zhenwei; cui xiaoli; yang xiliang and zhang zhuangjian* (department of materials science; fudan university; shanghai; 200433; china)
..............page:15-19
Silicon-Oxygen Nanocrystalline Composite Films(nc-SiO_x:H)Directly Deposi ted by Plasma Enhanced Chemical Vapor Deposition
shi guohua; han gaorong*; du piyi; zhao gaoling; shen ge and zhang xiwen (state key laboratory of silicon materials; department of materials science and e ngineering; zhejiang university; hangzhou; 310027; china)
..............page:27-29
Axisymetric Surface-Wave Dispersion in Plasma Antenna
yang lanlan*; tu yan and wang baoping (electronic engineering department; southeast university; nanjing; 210096; china)
..............page:24-26,29
Electrical Properties of Al+N Co-doped p-type ZnO Films
zhang zhenghai; ye zhizhen*; zhu liping; zhao binghui; zhuge fei and l jianguo (state key lab of silicon materials; zhejiang university; hangzhou; 310027; china)
..............page:8-10