High quality non-rectifying contact of ITO with both Ni and n-type GaAs
Wang Qingsong;Masao Ikeda;Tan Ming;Dai Pan;Wu Yuanyuan;Lu Shulong;Yang Hui;Key Laboratory Nano-Devices and Application;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Nano Science and Technology Institute;University of Science and Technology of China;University of Chinese Academy of Sciences;
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MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application
Zhou Jiahui;Chang Hudong;Liu Honggang;Liu Guiming;Xu Wenjun;Li Qi;Li Simin;He Zhiyi;Li Haiou;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;Microwave Device and IC Department;Institute of Microelectronics;Chinese Academy of Sciences;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:41-44
Thin silicon layer SOI power device with linearly-distance fixed charge islands
Zuo Yuan;Li Haiou;Zhai Jianghui;Tang Ning;Song Shuxiang;Li Qi;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;College of Electronic Engineering;Guangxi Normal University;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:45-49
Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers
Lei Yan;Liu Zhiqiang;He Miao;Yi Xiaoyan;Wang Junxi;Li Jinmin;Zheng Shuwen;Li Shuti;Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices;Institute of Optoelectronic Materials and Technology;South China Normal University;Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences;Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices;South China Normal University;
..............page:50-53
High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells
Liao Yongping;Zhang Yu;Xing Junliang;Wei Sihang;Hao Hongyue;Wang Guowei;Xu Yingqiang;Niu Zhichuan;State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics;University of Science and Technology of China;
..............page:54-57
On-wafer de-embedding techniques from 0.1 to 110 GHz
Tang Guoping;Yao Hongfei;Ma Xiaohua;Jin Zhi;Liu Xinyu;School of Advanced Materials and Nanotechnology;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;Xidian University;Institute of Microelectronics;Chinese Academy of Sciences;
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