1674-4926
2015 Issue 5
..............page:2
Structural and opto-electrical properties of pyrolized ZnO-CdO crystalline thin films
A.M.M.Tanveer Karim;M.K.R.Khan;M.Mozibur Rahman;Department of Physics;Rajshahi University of Engineering & Technology;Department of Physics;University of Rajshahi;
A.M.M.Tanveer Karim;M.K.R.Khan;M.Mozibur Rahman;Department of Physics;Rajshahi University of Engineering & Technology;Department of Physics;University of Rajshahi;
..............page:5-11
First-principles calculations of Mg2X（X =Si,Ge,Sn） semiconductors with the calcium fluorite structure
Guo Sandong;Department of Physics;School of Sciences;China University of Mining and Technology;
Guo Sandong;Department of Physics;School of Sciences;China University of Mining and Technology;
..............page:12-17
High quality non-rectifying contact of ITO with both Ni and n-type GaAs
Wang Qingsong;Masao Ikeda;Tan Ming;Dai Pan;Wu Yuanyuan;Lu Shulong;Yang Hui;Key Laboratory Nano-Devices and Application;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Nano Science and Technology Institute;University of Science and Technology of China;University of Chinese Academy of Sciences;
Wang Qingsong;Masao Ikeda;Tan Ming;Dai Pan;Wu Yuanyuan;Lu Shulong;Yang Hui;Key Laboratory Nano-Devices and Application;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Nano Science and Technology Institute;University of Science and Technology of China;University of Chinese Academy of Sciences;
..............page:18-22
Deposition and doping of CdS/CdTe thin film solar cells
Nima E.Gorji;Department of Electrical;Electronics and Information Engineering;University of Bologna;
Nima E.Gorji;Department of Electrical;Electronics and Information Engineering;University of Bologna;
..............page:23-27
A 2-D semi-analytical model of double-gate tunnel field-effect transistor
Xu Huifang;Dai Yuehua;Li Ning;Xu Jianbin;Institute of Electronic and Information Engineering;Anhui University;
Xu Huifang;Dai Yuehua;Li Ning;Xu Jianbin;Institute of Electronic and Information Engineering;Anhui University;
..............page:28-34
Charge deposition model for investigating SE-microdose effect in trench power MOSFETs
Wan Xin;Zhou Weisong;Liu Daoguang;Bo Hanliang;Xu Jun;Institute of Nuclear and New Energy Technology;Tsinghua University;Institute of Microelectronics;Tsinghua University;
Wan Xin;Zhou Weisong;Liu Daoguang;Bo Hanliang;Xu Jun;Institute of Nuclear and New Energy Technology;Tsinghua University;Institute of Microelectronics;Tsinghua University;
..............page:35-40
MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application
Zhou Jiahui;Chang Hudong;Liu Honggang;Liu Guiming;Xu Wenjun;Li Qi;Li Simin;He Zhiyi;Li Haiou;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;Microwave Device and IC Department;Institute of Microelectronics;Chinese Academy of Sciences;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Zhou Jiahui;Chang Hudong;Liu Honggang;Liu Guiming;Xu Wenjun;Li Qi;Li Simin;He Zhiyi;Li Haiou;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;Microwave Device and IC Department;Institute of Microelectronics;Chinese Academy of Sciences;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:41-44
Thin silicon layer SOI power device with linearly-distance fixed charge islands
Zuo Yuan;Li Haiou;Zhai Jianghui;Tang Ning;Song Shuxiang;Li Qi;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;College of Electronic Engineering;Guangxi Normal University;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Zuo Yuan;Li Haiou;Zhai Jianghui;Tang Ning;Song Shuxiang;Li Qi;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;College of Electronic Engineering;Guangxi Normal University;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:45-49
Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers
Lei Yan;Liu Zhiqiang;He Miao;Yi Xiaoyan;Wang Junxi;Li Jinmin;Zheng Shuwen;Li Shuti;Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices;Institute of Optoelectronic Materials and Technology;South China Normal University;Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences;Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices;South China Normal University;
Lei Yan;Liu Zhiqiang;He Miao;Yi Xiaoyan;Wang Junxi;Li Jinmin;Zheng Shuwen;Li Shuti;Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices;Institute of Optoelectronic Materials and Technology;South China Normal University;Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences;Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices;South China Normal University;
..............page:50-53
High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells
Liao Yongping;Zhang Yu;Xing Junliang;Wei Sihang;Hao Hongyue;Wang Guowei;Xu Yingqiang;Niu Zhichuan;State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics;University of Science and Technology of China;
Liao Yongping;Zhang Yu;Xing Junliang;Wei Sihang;Hao Hongyue;Wang Guowei;Xu Yingqiang;Niu Zhichuan;State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics;University of Science and Technology of China;
..............page:54-57
Preparation for Bragg grating of 808 nm distributed feedback laser diode
Wang Yong;Liu Dandan;Feng Guoqing;Ye Zhen;Gao Zhanqi;Wang Xiaohua;National Key Laboratory on High Power Semiconductor Lasers;Changchun University of Science and Technology;
Wang Yong;Liu Dandan;Feng Guoqing;Ye Zhen;Gao Zhanqi;Wang Xiaohua;National Key Laboratory on High Power Semiconductor Lasers;Changchun University of Science and Technology;
..............page:58-61
Photoelectric properties of p-β-FeSi2/n-4H-SiC heteroj unction near-infrared photodiode
Zheng Chunlei;Pu Hongbin;Li Hong;Chen Zhiming;Xi’an University of Technology;Department of Electronic Engineering;
Zheng Chunlei;Pu Hongbin;Li Hong;Chen Zhiming;Xi’an University of Technology;Department of Electronic Engineering;
..............page:62-64
Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system
Hamed Ghodsi;Hassan Kaatuzian;Photonics Research Laboratory;Electrical Engineering Department;Amir Kabir University of Technology;
Hamed Ghodsi;Hassan Kaatuzian;Photonics Research Laboratory;Electrical Engineering Department;Amir Kabir University of Technology;
..............page:65-69
Modeling and analysis of the HPM pulse-width upset effect on CMOS inverter
Yu Xinhai;Chai Changchun;Qiao Liping;Yang Yintang;Liu Yang;Xi Xiaowen;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;
Yu Xinhai;Chai Changchun;Qiao Liping;Yang Yintang;Liu Yang;Xi Xiaowen;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;
..............page:70-75
On-wafer de-embedding techniques from 0.1 to 110 GHz
Tang Guoping;Yao Hongfei;Ma Xiaohua;Jin Zhi;Liu Xinyu;School of Advanced Materials and Nanotechnology;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;Xidian University;Institute of Microelectronics;Chinese Academy of Sciences;
Tang Guoping;Yao Hongfei;Ma Xiaohua;Jin Zhi;Liu Xinyu;School of Advanced Materials and Nanotechnology;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;Xidian University;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:76-84
An I/Q mixer with an integrated differential quadrature all-pass filter for on-chip quadrature LO signal generation
Najam Muhammad Amin;Wang Zhigong;Li Zhiqun;Engineering Research Center of RF-ICs and RF-Systems;Ministry of Education;
Najam Muhammad Amin;Wang Zhigong;Li Zhiqun;Engineering Research Center of RF-ICs and RF-Systems;Ministry of Education;
..............page:85-93
FDTD technique based crosstalk analysis of bundled SWCNT interconnects
Yograj Singh Duksh;Brajesh Kumar Kaushik;Rajendra P.Agarwal;Department of Electronics and Instrumentation Engineering;Mahatma Jyotiba Phule Rohilkhand University;Department of Electronics and Communication Engineering;Indian Institute of Technology;Shobhit University;
Yograj Singh Duksh;Brajesh Kumar Kaushik;Rajendra P.Agarwal;Department of Electronics and Instrumentation Engineering;Mahatma Jyotiba Phule Rohilkhand University;Department of Electronics and Communication Engineering;Indian Institute of Technology;Shobhit University;
..............page:94-102
A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver
Xu Jian;Zhou Zheng;Wu Yiqiang;Wang Zhigong;Chen Jianping;Institute of RF- & OE-ICs;Southeast University;Nanjing Ticom Tech Co.Ltd;
Xu Jian;Zhou Zheng;Wu Yiqiang;Wang Zhigong;Chen Jianping;Institute of RF- & OE-ICs;Southeast University;Nanjing Ticom Tech Co.Ltd;
..............page:103-107
Design of a constant-voltage and constant-current controller with dual-loop and adaptive switching frequency control
Chen Yingping;Li Zhiqian;Sigma Micro Co.Ltd.;
Chen Yingping;Li Zhiqian;Sigma Micro Co.Ltd.;
..............page:108-114
Adaptive switching frequency buck DC-DC converter with high-accuracy on-chip current sensor
Jiang Jinguang;Huang Fei;Xiong Zhihui;Global Navigation Satellite System Research Center;Wuhan University;
Jiang Jinguang;Huang Fei;Xiong Zhihui;Global Navigation Satellite System Research Center;Wuhan University;
..............page:115-123
An OTA-C filter for ECG acquisition systems with highly linear range and less passband attenuation
Duan Jihai;Lan Chuang;Xu Weilin;Wei Baolin;Guangxi Key Laboratory of Precision Navigation Technology and Application;Guilin University of Electronic Technology;
Duan Jihai;Lan Chuang;Xu Weilin;Wei Baolin;Guangxi Key Laboratory of Precision Navigation Technology and Application;Guilin University of Electronic Technology;
..............page:124-129
Analysis of switch-induced error voltage for automatic conversion mode change charge pumps
Chi Yuan;Lai Xinquan;Du Hanxiao;Institute of Electronic CAD;Xidian University;Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;
Chi Yuan;Lai Xinquan;Du Hanxiao;Institute of Electronic CAD;Xidian University;Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;
..............page:130-140
A UHF RFID system with on-chip-antenna tag for short range communication
Peng Qi;Zhang Chun;Zhao Xijin;Wang Zhihua;Institute of Microelectronics;Tsinghua University;
Peng Qi;Zhang Chun;Zhao Xijin;Wang Zhihua;Institute of Microelectronics;Tsinghua University;
..............page:141-147
A 6-b 600 MS/s SAR ADC with a new switching procedure of 2-b/stage and selflocking comparators
Xiang Jixuan;Chen Chixiao;Ye Fan;Xu Jun;Li Ning;Ren Junyan;State Key Laboratory of ASIC and System;Fudan University;
Xiang Jixuan;Chen Chixiao;Ye Fan;Xu Jun;Li Ning;Ren Junyan;State Key Laboratory of ASIC and System;Fudan University;
..............page:148-154
A single channel,6-bit 410-MS/s 3bits/stage asynchronous SAR ADC based on resistive DAC
Han Xue;Wei Qi;Yang Huazhong;Wang Hui;Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;
Han Xue;Wei Qi;Yang Huazhong;Wang Hui;Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;
..............page:155-161
A capacitive DAC with custom 3-D 1-fF MOM unit capacitors optimized for fastsettling routing in high speed SAR ADCs
Chen Chixiao;Xiang Jixuan;Chen Huabin;Xu Jun;Ye Fan;Li Ning;Ren Junyan;State Key Laboratory of ASIC and System;Fudan University;
Chen Chixiao;Xiang Jixuan;Chen Huabin;Xu Jun;Ye Fan;Li Ning;Ren Junyan;State Key Laboratory of ASIC and System;Fudan University;
..............page:162-166
A 10-bit 250 MSPS charge-domain pipelined ADC with replica controlled PVT insensitive BCT circuit
Huang Songren;Zhang Hong;Chen Zhenhai;Zhu Shuang;Yu Zongguang;Qian Hongwen;Hao Yue;Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory;Xidian University;School of Electronics and Information Engineering;Xi’an Jiaotong University;No.58 Research Institute;China Electronic Technology Group Corporation;
Huang Songren;Zhang Hong;Chen Zhenhai;Zhu Shuang;Yu Zongguang;Qian Hongwen;Hao Yue;Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory;Xidian University;School of Electronics and Information Engineering;Xi’an Jiaotong University;No.58 Research Institute;China Electronic Technology Group Corporation;
..............page:167-173
A 0.23 pJ 11.05-bit ENOB 125-MS/s pipelined ADC in a 0.18 μm CMOS process
Wang Yong;Zhang Jianyun;Yin Rui;Zhao Yuhang;Zhang Wei;State Key Laboratory of ASIC & System;School of Microelectronics;Fudan University;Shanghai Integrated Circuit Research and Development Center Co.;Ltd.;
Wang Yong;Zhang Jianyun;Yin Rui;Zhao Yuhang;Zhang Wei;State Key Laboratory of ASIC & System;School of Microelectronics;Fudan University;Shanghai Integrated Circuit Research and Development Center Co.;Ltd.;
..............page:174-178
An energy-efficient and highly linear switching capacitor procedure for SAR ADCs
Ma Rui;Bai Wenbin;Zhu Zhangming;School of Microelectronics;Xidian University;
Ma Rui;Bai Wenbin;Zhu Zhangming;School of Microelectronics;Xidian University;
..............page:179-184
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Gao Dan;Liu Bo;Li Ying;Song Zhitang;Ren Wanchun;Li Juntao;Xu Zhen;Lü Shilong;Zhu Nanfei;Ren Jiadong;Zhan Yipeng;Wu Hanming;Feng Songlin;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System and Information Technology;Chinese Academy of Sciences;University of Chinese Academy of Sciences;Semiconductor Manufacturing International Corporation;
Gao Dan;Liu Bo;Li Ying;Song Zhitang;Ren Wanchun;Li Juntao;Xu Zhen;Lü Shilong;Zhu Nanfei;Ren Jiadong;Zhan Yipeng;Wu Hanming;Feng Songlin;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System and Information Technology;Chinese Academy of Sciences;University of Chinese Academy of Sciences;Semiconductor Manufacturing International Corporation;
..............page:185-190