1674-4926
2015 Issue 10
Packaging investigation of optoelectronic devices
Zhang Zhike;Liu Yu;Liu Jianguo;Zhu Ninghua;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
Zhang Zhike;Liu Yu;Liu Jianguo;Zhu Ninghua;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:5-10
Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot
M.Tiotsop;A.J.Fotue;S.C.Kenfack;N.Issofa;A.V.Wirngo;M.P.Tabue Djemmo;H.Fotsin;L.C.Fai;Mesoscopic and Multilayers Structures Laboratory;Department of Physics;Faculty of Science;University of Dschang;Laboratory of Mechanics and Modeling of Physical Systems;Faculty of Science;University of Dschang;Laboratory of Electronics and Signal Processing;Department of Physics;Faculty of Science;University of Dschang;
M.Tiotsop;A.J.Fotue;S.C.Kenfack;N.Issofa;A.V.Wirngo;M.P.Tabue Djemmo;H.Fotsin;L.C.Fai;Mesoscopic and Multilayers Structures Laboratory;Department of Physics;Faculty of Science;University of Dschang;Laboratory of Mechanics and Modeling of Physical Systems;Faculty of Science;University of Dschang;Laboratory of Electronics and Signal Processing;Department of Physics;Faculty of Science;University of Dschang;
..............page:11-17
First-principle study on energy gap of CNT superlattice structure
Yang Zhonghua;Liu Guili;Qu Yingdong;Li Rongde;School of Architecture Engineering;Shenyang University of Technology;School of Material Engineering;Shenyang University of Technology;
Yang Zhonghua;Liu Guili;Qu Yingdong;Li Rongde;School of Architecture Engineering;Shenyang University of Technology;School of Material Engineering;Shenyang University of Technology;
..............page:18-23
Effect of N and Fe codoping on the electronic structure and optical properties of TiO2 from first-principles study
Zhu Zhuomao;Bian Baoan;Shi Haifeng;School of Science;Jiangnan University;Department of Physics;Nanjing University;
Zhu Zhuomao;Bian Baoan;Shi Haifeng;School of Science;Jiangnan University;Department of Physics;Nanjing University;
..............page:24-28
Effects of magnetic field on the polaron in an asymmetrical Gaussian confinement potential quantum well
Ma Xinjun;Xiao Boyu;Sun Yong;Xiao Jinglin;Institute of Condensed Matter Physics;Inner Mongolia University for the Nationalities;
Ma Xinjun;Xiao Boyu;Sun Yong;Xiao Jinglin;Institute of Condensed Matter Physics;Inner Mongolia University for the Nationalities;
..............page:29-32
Coupling effect of quantum wells on band structure
Chen Jie;Zeng Weiyou;School of Science;Hubei University of Automotive Technology;
Chen Jie;Zeng Weiyou;School of Science;Hubei University of Automotive Technology;
..............page:33-36
Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics
Jing Hongqi;Zhong Li;Ni Yuxi;Zhang Junjie;Liu Suping;Ma Xiaoyu;National Engineering Research Center for Optoelectronic Devices;Institute of Semiconductors;Chinese Academy of Sciences;
Jing Hongqi;Zhong Li;Ni Yuxi;Zhang Junjie;Liu Suping;Ma Xiaoyu;National Engineering Research Center for Optoelectronic Devices;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:37-42
ZnS thin films deposition by thermal evaporation for photovoltaic applications
K.Benyahia;A.Benhaya;M.S.Aida;Electrical Engineering Department;University of Hadj Lakhdar Batna;Head of Clean Room;LEA Laboratory;University of Hadj Lakhdar Batna;Physics Department;University of Constantine 1;
K.Benyahia;A.Benhaya;M.S.Aida;Electrical Engineering Department;University of Hadj Lakhdar Batna;Head of Clean Room;LEA Laboratory;University of Hadj Lakhdar Batna;Physics Department;University of Constantine 1;
..............page:43-46
The influence of Fe doping on the surface topography of GaN epitaxial material
Cui Lei;Yin Haibo;Jiang Lijuan;Wang Quan;Feng Chun;Xiao Hongling;Wang Cuimei;Gong Jiamin;Zhang Bo;Li Baiquan;Wang Xiaoliang;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;School of Electronic Engineering;Xi’an University of Posts & Telecommunications;Beijing Huajin Chuangwei Technology Co.;Ltd.;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;
Cui Lei;Yin Haibo;Jiang Lijuan;Wang Quan;Feng Chun;Xiao Hongling;Wang Cuimei;Gong Jiamin;Zhang Bo;Li Baiquan;Wang Xiaoliang;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;School of Electronic Engineering;Xi’an University of Posts & Telecommunications;Beijing Huajin Chuangwei Technology Co.;Ltd.;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;
..............page:47-50
Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer
Yi Mingdong;Zhang Ning;Xie Linghai;Huang Wei;Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials;Jiangsu National Synergistic Innovation Center for Advanced Materials;Nanjing University of Posts & Telecommunications;Key Laboratory of Flexible Electronics & Institute of Advanced Materials;Jiangsu National Synergistic Innovation Center for Advanced Materials;Nanjing Tech University;
Yi Mingdong;Zhang Ning;Xie Linghai;Huang Wei;Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials;Jiangsu National Synergistic Innovation Center for Advanced Materials;Nanjing University of Posts & Telecommunications;Key Laboratory of Flexible Electronics & Institute of Advanced Materials;Jiangsu National Synergistic Innovation Center for Advanced Materials;Nanjing Tech University;
..............page:51-56
Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure
Zheng Zhongxin;Sun Jiandong;Zhou Yu;Zhang Zhipeng;Qin Hua;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
Zheng Zhongxin;Sun Jiandong;Zhou Yu;Zhang Zhipeng;Qin Hua;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:57-61
An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications
Dang Huanqin;Wu Xiaoming;Sun Xiaowei;Zou Runqiu;Zhang Ruochuan;Yin Shougen;Institute of Material Physics;Tianjin University of Technology;Key Laboratory of Display Material and Photoelectric Devices;Ministry of Education of China;Tianjin University of Technology;School of Electrical & Electronic Engineering;Nanyang Technological University;
Dang Huanqin;Wu Xiaoming;Sun Xiaowei;Zou Runqiu;Zhang Ruochuan;Yin Shougen;Institute of Material Physics;Tianjin University of Technology;Key Laboratory of Display Material and Photoelectric Devices;Ministry of Education of China;Tianjin University of Technology;School of Electrical & Electronic Engineering;Nanyang Technological University;
..............page:62-66
Enhanced electroluminescence from a free-standing tensilely strained germanium nanomembrane light-emitting diode
Chen Jingming;Shu Bin;Wu Jibao;Fan Linxi;Zhang Heming;Hu Huiyong;Xuan Rongxi;Song Jianjun;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;
Chen Jingming;Shu Bin;Wu Jibao;Fan Linxi;Zhang Heming;Hu Huiyong;Xuan Rongxi;Song Jianjun;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;
..............page:67-70
Enhanced light trapping in periodically truncated cone silicon nanowire structure
Qiu Kai;Zuo Yuhua;Zhou Tianwei;Liu Zhi;Zheng Jun;Li Chuanbo;Cheng Buwen;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
Qiu Kai;Zuo Yuhua;Zhou Tianwei;Liu Zhi;Zheng Jun;Li Chuanbo;Cheng Buwen;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:71-75
Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes
Wang Hui;Niu Yingxi;Yang Fei;Cai Yong;Zhang Zehong;Zeng Zhongming;Wang Minrui;Zeng Chunhong;Zhang Baoshun;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;State Grid Corporation of China;
Wang Hui;Niu Yingxi;Yang Fei;Cai Yong;Zhang Zehong;Zeng Zhongming;Wang Minrui;Zeng Chunhong;Zhang Baoshun;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;State Grid Corporation of China;
..............page:76-81
System level simulation of a micro resonant accelerometer with geometric nonlinear beams
Jiao Wenlong;Yuan Weizheng;Chang Honglong;School of Mechanical Engineering;Northwestern Polytechnical University;Key Laboratory of Micro/Nano Systems for Aerospace;Ministry of Education;
Jiao Wenlong;Yuan Weizheng;Chang Honglong;School of Mechanical Engineering;Northwestern Polytechnical University;Key Laboratory of Micro/Nano Systems for Aerospace;Ministry of Education;
..............page:82-87
Multi-mode multi-band power amplifier module with high low-power efficiency
Zhang Xuguang;Jin Jie;Guangzhou Junheng Microelectronics Tech Ltd;Shanghai University of Engineering Science;
Zhang Xuguang;Jin Jie;Guangzhou Junheng Microelectronics Tech Ltd;Shanghai University of Engineering Science;
..............page:88-94
A 16 b 2 GHz digital-to-analog converter in 0.18 μm CMOS with digital calibration technology
Yang Weidong;Zang Jiandong;Li Tiehu;Luo Pu;Pu Jie;Zhang Ruitao;Chen Chao;Science and Technology on Analog Integrated Circuit Laboratory;China Electronics Technology Group Corporation No.24 Research Institute;
Yang Weidong;Zang Jiandong;Li Tiehu;Luo Pu;Pu Jie;Zhang Ruitao;Chen Chao;Science and Technology on Analog Integrated Circuit Laboratory;China Electronics Technology Group Corporation No.24 Research Institute;
..............page:95-101
A CMOS frontend chip for implantable neural recording with wide voltage supply range
Liu Jialin;Zhang Xu;Hu Xiaohui;Guo Yatao;Li Peng;Liu Ming;Li Bin;Chen Hongda;State Key Laboratory on Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;School of Electronic and Information Engineering;South China University of Technology;
Liu Jialin;Zhang Xu;Hu Xiaohui;Guo Yatao;Li Peng;Liu Ming;Li Bin;Chen Hongda;State Key Laboratory on Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;School of Electronic and Information Engineering;South China University of Technology;
..............page:102-109
A high-precision synchronization circuit for clock distribution
Lu Chong;Tan Hongzhou;Duan Zhikui;Ding Yi;SYSU-CMU Shunde International Joint Research Institute;School of Information Science and Technology;Sun Yat-Sen University;
Lu Chong;Tan Hongzhou;Duan Zhikui;Ding Yi;SYSU-CMU Shunde International Joint Research Institute;School of Information Science and Technology;Sun Yat-Sen University;
..............page:110-118
Demonstration of a fully differential VGA chip with small THD for ECG acquisition system
Xiao Gongli;Qin Yuliang;Xu Weilin;Wei Baolin;Duan Jihai;Wei Xueming;School of Information and Communication;Guilin University of Electronic Technology;Guangxi Experiment Center of Information Science;
Xiao Gongli;Qin Yuliang;Xu Weilin;Wei Baolin;Duan Jihai;Wei Xueming;School of Information and Communication;Guilin University of Electronic Technology;Guangxi Experiment Center of Information Science;
..............page:119-124
A single-ended 10-bit 200 kS/s 607 μW SAR ADC with an auto-zeroing offset cancellation technique
Gu Weiru;Wu Yimin;Ye Fan;Ren Junyan;State Key Laboratory of ASIC & System;Microelectronics Science and Technology Innovation Platform;Fudan University;
Gu Weiru;Wu Yimin;Ye Fan;Ren Junyan;State Key Laboratory of ASIC & System;Microelectronics Science and Technology Innovation Platform;Fudan University;
..............page:125-131
A self-biased PLL with low power and compact area
Jia Hailong;Chen Xianmin;Liu Qi;Feng Guangtao;Design Service Center;Semiconductor Manufacturing International Corp.;
Jia Hailong;Chen Xianmin;Liu Qi;Feng Guangtao;Design Service Center;Semiconductor Manufacturing International Corp.;
..............page:132-136
A low power low noise analog front end for portable healthcare system
Wang Yanchao;Ke Keren;Qin Wenhui;Qin Yajie;Yi Ting;Hong Zhiliang;State Key Laboratory of ASIC & Systems;Fudan University;
Wang Yanchao;Ke Keren;Qin Wenhui;Qin Yajie;Yi Ting;Hong Zhiliang;State Key Laboratory of ASIC & Systems;Fudan University;
..............page:137-143
An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS
Luo Yanbin;Ma Chengyan;Gan Yebing;Qian Min;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;Hangzhou Zhongke Microelectronics Co.Ltd.;
Luo Yanbin;Ma Chengyan;Gan Yebing;Qian Min;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;Hangzhou Zhongke Microelectronics Co.Ltd.;
..............page:144-150
A broadband 47–67 GHz LNA with 17.3 dB gain in 65-nm CMOS
Wang Chong;Li Zhiqun;Li Qin;Liu Yang;Wang Zhigong;Institute of RF-& OE-ICs;Southeast University;
Wang Chong;Li Zhiqun;Li Qin;Liu Yang;Wang Zhigong;Institute of RF-& OE-ICs;Southeast University;
..............page:151-156
A novel compound cleaning solution for benzotriazole removal after copper CMP
Gu Zhangbing;Liu Yuling;Gao Baohong;Wang Chenwei;Deng Haiwen;Institute of Microelectronics;Hebei University of Technology;
Gu Zhangbing;Liu Yuling;Gao Baohong;Wang Chenwei;Deng Haiwen;Institute of Microelectronics;Hebei University of Technology;
..............page:157-162
A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning
Deng Haiwen;Tan Baimei;Gao Baohong;Wang Chenwei;Gu Zhangbing;Zhang Yan;Institute of Microelectronics;Hebei University of Technology;
Deng Haiwen;Tan Baimei;Gao Baohong;Wang Chenwei;Gu Zhangbing;Zhang Yan;Institute of Microelectronics;Hebei University of Technology;
..............page:163-167
A novel kind of TSV slurry with guanidine hydrochloride
Hong Jiao;Liu Yuling;Zhang Baoguo;Niu Xinhuan;Han Liying;School of Electronic Information Engineering;Hebei University of Technology;Tianjin Key Laboratory of Electronic Materials and Devices;
Hong Jiao;Liu Yuling;Zhang Baoguo;Niu Xinhuan;Han Liying;School of Electronic Information Engineering;Hebei University of Technology;Tianjin Key Laboratory of Electronic Materials and Devices;
..............page:168-172