1674-4926
2013 Issue 9
Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode
P. Dalapati;N. B. Manik;A. N.Basu;Condensed Matter Physics Research Center;Department of Physics;Jadavpur University;
P. Dalapati;N. B. Manik;A. N.Basu;Condensed Matter Physics Research Center;Department of Physics;Jadavpur University;
..............page:5-9
Comparison of band-to-band tunneling models in Si and Si–Ge junctions
Jiao Yipeng;Wei Kangliang;Wang Taihuan;Du Gang;Liu Xiaoyan;Shenzhen Graduate School;Peking University;Institute of Microelectronics;Peking University;
Jiao Yipeng;Wei Kangliang;Wang Taihuan;Du Gang;Liu Xiaoyan;Shenzhen Graduate School;Peking University;Institute of Microelectronics;Peking University;
..............page:10-14
The effects of electron irradiation on the optical properties of the organic semiconductor polypyrrole
J. V. Thombare;M. C. Rath;S. H. Han;V. J.Fulari;Holography and Materials Research Laboratory;Department of Physics;Shivaji University;Radiation and Photochemistry Division;BARC;Department of Chemistry;Hanyang University;
J. V. Thombare;M. C. Rath;S. H. Han;V. J.Fulari;Holography and Materials Research Laboratory;Department of Physics;Shivaji University;Radiation and Photochemistry Division;BARC;Department of Chemistry;Hanyang University;
..............page:15-19
Structural, morphological, dielectrical and magnetic properties of Mn substituted cobalt ferrite
S. P. Yadav;S. S. Shinde;A. A. Kadam;K. Y.Rajpure;Karmveer Bhaurao Patil College;Vashi;Navi Mumbai Maharashtra-400703;India;Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur Maharashtra-416004;India;Smt.Kashibai Navale College of Engineering;Wadgaon Bk;Pune Maharashtra-411041;India;
S. P. Yadav;S. S. Shinde;A. A. Kadam;K. Y.Rajpure;Karmveer Bhaurao Patil College;Vashi;Navi Mumbai Maharashtra-400703;India;Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur Maharashtra-416004;India;Smt.Kashibai Navale College of Engineering;Wadgaon Bk;Pune Maharashtra-411041;India;
..............page:20-24
The effect of the film thickness and doping content of SnO2 :F thin films prepared by the ultrasonic spray method
Achour Rahal;Said Benramache;Boubaker Benhaoua;VTRS Laboratory;Institute of Technology;University of El-oued 39000;Algeria;Physics Laboratory;Institute of Technology;University of El-oued 39000;Algeria;Material Sciences Laboratory;Faculty of Science;University of Biskra 07000;Algeria;
Achour Rahal;Said Benramache;Boubaker Benhaoua;VTRS Laboratory;Institute of Technology;University of El-oued 39000;Algeria;Physics Laboratory;Institute of Technology;University of El-oued 39000;Algeria;Material Sciences Laboratory;Faculty of Science;University of Biskra 07000;Algeria;
..............page:25-29
Parameters influencing the optical properties of SnS thin films
Priyal Jain;P.Arun;Department of Electronic Science;University of Delhi-South Campus;Benito Juarez Marg;Delhi 110021;India;Material Science Research Lab;S.G.T.B.Khalsa College;University of Delhi;Delhi 110007;India;
Priyal Jain;P.Arun;Department of Electronic Science;University of Delhi-South Campus;Benito Juarez Marg;Delhi 110021;India;Material Science Research Lab;S.G.T.B.Khalsa College;University of Delhi;Delhi 110007;India;
..............page:30-35
Persistent photoconductivity in neutron irradiated GaN
Zhang Minglan;Yang Ruixia;Liu Naixin;Wang Xiaoliang;College of Information Engineering;Hebei University of Technology;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Semiconductor Lighting R & D Center;Institute of Semiconductors;Chinese Academy of Sciences;
Zhang Minglan;Yang Ruixia;Liu Naixin;Wang Xiaoliang;College of Information Engineering;Hebei University of Technology;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Semiconductor Lighting R & D Center;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:36-38
Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer
Hassan Kaatuzian;Hadi Dehghan Nayeri;Masoud Ataei;Ashkan Zandi;Photonics Research Laboratory;Electrical Engineering Department;AmirKabir University of Technology;
Hassan Kaatuzian;Hadi Dehghan Nayeri;Masoud Ataei;Ashkan Zandi;Photonics Research Laboratory;Electrical Engineering Department;AmirKabir University of Technology;
..............page:39-44
A surface-potential-based model for AlGaN/AlN/GaN HEMT
Wang Jie;Sun Lingling;Liu Jun;Zhou Mingzhu;Department of Electrical Engineering;Zhejiang University;Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;
Wang Jie;Sun Lingling;Liu Jun;Zhou Mingzhu;Department of Electrical Engineering;Zhejiang University;Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;
..............page:45-48
Performance of an AlGaN/GaN MISHEMT with sodium beta-alumina for gate insulation and surface passivation
Tian Benlang;Chen Chao;Zhang Wanli;Liu Xingzhao;The State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electron Science and Technology of China;
Tian Benlang;Chen Chao;Zhang Wanli;Liu Xingzhao;The State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electron Science and Technology of China;
..............page:49-52
The total ionizing dose effects of non-planar triple-gate transistors
Liu Shiyao;He Wei;Cao Jianmin;Huang Siwen;Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology;Shenzhen University;
Liu Shiyao;He Wei;Cao Jianmin;Huang Siwen;Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology;Shenzhen University;
..............page:53-56
Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS
Jiang Yongheng;Luo Xiaorong;Li Yanfei;Wang Pei;Fan Ye;Zhou Kun;Wang Qi;Hu Xiarong;Zhang Bo;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Jiang Yongheng;Luo Xiaorong;Li Yanfei;Wang Pei;Fan Ye;Zhou Kun;Wang Qi;Hu Xiarong;Zhang Bo;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:57-61
A compact model for single material double work function gate MOSFET
Zheng Changyong;Zhang Wei;Xu Tailong;Dai Yuehua;Chen Junning;School of Electronics and Information Engineering;Anhui University;Key Laboratory of Intelligent Building of Anhui Province;Anhui University of Architecture;
Zheng Changyong;Zhang Wei;Xu Tailong;Dai Yuehua;Chen Junning;School of Electronics and Information Engineering;Anhui University;Key Laboratory of Intelligent Building of Anhui Province;Anhui University of Architecture;
..............page:62-66
An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process
Yu Ting;Luo Ling;Institute of Semiconductors;Chinese Academy of Sciences;Xidian University;
Yu Ting;Luo Ling;Institute of Semiconductors;Chinese Academy of Sciences;Xidian University;
..............page:67-70
Analytical model for high-voltage SOI device with composite-k dielectric buried layer
Fan Jie;Zhang Bo;Luo Xiaorong;Wang Zhigang;Li Zhaoji;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Fan Jie;Zhang Bo;Luo Xiaorong;Wang Zhigang;Li Zhaoji;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:71-76
Novel high-voltage, high-side and low-side power devices with a single control signal
Kong Moufu;Chen Xingbi;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Kong Moufu;Chen Xingbi;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:77-81
The design and fabrication of a GaN-based monolithic light-emitting diode array
Zhan Teng;Zhang Yang;Li Jing;Ma Jun;Liu Zhiqiang;Yi Xiaoyan;Wang Guohong;Li Jinmin;Semiconductor Lighting R & D Center;Chinese Academy of Sciences;Institute of Semiconductors;Chinese Academy of Sciences;
Zhan Teng;Zhang Yang;Li Jing;Ma Jun;Liu Zhiqiang;Yi Xiaoyan;Wang Guohong;Li Jinmin;Semiconductor Lighting R & D Center;Chinese Academy of Sciences;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:82-85
Analysis of fabrication results for 17×17 polymer arrayed waveguide grating multiplexers with flat spectral responses
Qin Zhengkun;Yu Yue;Song Jia;Zhang Huiping;Wang Guofeng;Sun Yongxin;Wang Yuhai;College of Information Technology;Jilin Normal University;State Key Laboratory on Integrated Optoelectronics;
Qin Zhengkun;Yu Yue;Song Jia;Zhang Huiping;Wang Guofeng;Sun Yongxin;Wang Yuhai;College of Information Technology;Jilin Normal University;State Key Laboratory on Integrated Optoelectronics;
..............page:86-89
Integrated reconfigurable optical add-drop multiplexers based on cascaded microring resonators
Lu Yangyang;Tian Yonghui;Yang Lin;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
Lu Yangyang;Tian Yonghui;Yang Lin;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:90-95
VLSI scaling methods and low power CMOS buffer circuit
Vijay Kumar Sharma;Manisha Pattanaik;Department of Information Technology;ABV-Indian Institute of Information Technology & Management;
Vijay Kumar Sharma;Manisha Pattanaik;Department of Information Technology;ABV-Indian Institute of Information Technology & Management;
..............page:96-103
A low-power 20 GSps track-and-hold amplifier in 0.18 μm SiGe BiCMOS technology
Tang Kai;Meng Qiao;Wang Zhigong;Zhang Yi;Yin Kuai;Guo Ting;Institute of RF-&OE-ICs;Southeast University;Engineering Research Center of RF-ICs and RF-Systems;Ministry of Education;
Tang Kai;Meng Qiao;Wang Zhigong;Zhang Yi;Yin Kuai;Guo Ting;Institute of RF-&OE-ICs;Southeast University;Engineering Research Center of RF-ICs and RF-Systems;Ministry of Education;
..............page:104-108
Design of a delay-locked-loop-based time-to-digital converter
Ma Zhaoxin;Bai Xuefei;Huang Lu;Department of Electronic Science and Technology;University of Science and Technology of China;Experimental Center for Information Sciences;University of Science and Technology of China;
Ma Zhaoxin;Bai Xuefei;Huang Lu;Department of Electronic Science and Technology;University of Science and Technology of China;Experimental Center for Information Sciences;University of Science and Technology of China;
..............page:109-115
A 1.2 V dual-channel 10 bit pipeline ADC in 55 nm CMOS for WLAN receivers
Gong Zheng;Hu Xueqing;Yan Jun;Shi Yin;Institute of Semiconductors;Chinese Academic of Sciences;
Gong Zheng;Hu Xueqing;Yan Jun;Shi Yin;Institute of Semiconductors;Chinese Academic of Sciences;
..............page:116-120
A passive UHF RFID tag with a dynamic-Vth-cancellation rectifier
Shen Jinpeng;Wang Bo;Liu Shan;Wang Xin’an;Ruan Zhengkun;Li Shoucheng;The Key Laboratory of Integrated Microsystems;Peking University Shenzhen Graduate School;
Shen Jinpeng;Wang Bo;Liu Shan;Wang Xin’an;Ruan Zhengkun;Li Shoucheng;The Key Laboratory of Integrated Microsystems;Peking University Shenzhen Graduate School;
..............page:121-125
W-band push–push monolithic frequency doubler in 1-μm InP DHBT technology
Yao Hongfei;Wang Xiantai;Wu Danyu;Su Yongbo;Cao Yuxiong;Ge Ji;Ning Xiaoxi;Jin Zhi;Institute of Microelectronics;Chinese Academy of Sciences;
Yao Hongfei;Wang Xiantai;Wu Danyu;Su Yongbo;Cao Yuxiong;Ge Ji;Ning Xiaoxi;Jin Zhi;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:126-131
A high linearity multi-band and gain adjustable channel-select filter for TV-tuner application
Wang Xin;Cheng Tao;Liu Jie;Tang Zhangwen;ASIC & System State Key Laboratory;Fudan University;
Wang Xin;Cheng Tao;Liu Jie;Tang Zhangwen;ASIC & System State Key Laboratory;Fudan University;
..............page:132-139
A reconfigurable multi-mode multi-band transmitter with integrated frequency synthesizer for short-range wireless communication
Qi Nan;Chen Fan;Zhang Lingwei;Wang Xiaoman;Chi Baoyong;Institute of Microelectronics;Tsinghua University;
Qi Nan;Chen Fan;Zhang Lingwei;Wang Xiaoman;Chi Baoyong;Institute of Microelectronics;Tsinghua University;
..............page:140-146
Design optimizations of phase noise, power consumption and frequency tuning for VCO
Chen Nan;Diao Shengxi;Huang Lu;Bai Xuefei;Lin Fujiang;Department of Electronic Science and Technology;University of Science and Technology of China;
Chen Nan;Diao Shengxi;Huang Lu;Bai Xuefei;Lin Fujiang;Department of Electronic Science and Technology;University of Science and Technology of China;
..............page:147-152
A sub-1-dB noise figure monolithic GNSS LNA
Zhou Renjie;Xiang Yong;Wang Hong;Gan Yebing;Qian Min;Ma Chengyan;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;Hangzhou Zhongke Microelectronics Co. Ltd.;Jiaxing Lianxing Microelectronics Co. Ltd.;
Zhou Renjie;Xiang Yong;Wang Hong;Gan Yebing;Qian Min;Ma Chengyan;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;Hangzhou Zhongke Microelectronics Co. Ltd.;Jiaxing Lianxing Microelectronics Co. Ltd.;
..............page:153-157
A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications
Zhang Jihong;Bai Xuefei;Huang Lu;Department of Electronic Science and Technology;University of Science and Technology of China;
Zhang Jihong;Bai Xuefei;Huang Lu;Department of Electronic Science and Technology;University of Science and Technology of China;
..............page:158-163
A dual redundancy radiation-hardened flip–flop based on a C-element in a 65 nm process
Chen Gang;Gao Bo;Gong Min;School of Physical Science and Technology;Sichuan University;Microelectronics Technology Key Laboratory of Sichuan Province;
Chen Gang;Gao Bo;Gong Min;School of Physical Science and Technology;Sichuan University;Microelectronics Technology Key Laboratory of Sichuan Province;
..............page:164-167
An area-efficient 55 nm 10-bit 1-MS/s SAR ADC for battery voltage measurement
Chen Hongming;Hao Yueguo;Zhao Long;Cheng Yuhua;Shanghai Research Institute of Microelectronics;Peking University;School of Information Science and Technology;Peking University;
Chen Hongming;Hao Yueguo;Zhao Long;Cheng Yuhua;Shanghai Research Institute of Microelectronics;Peking University;School of Information Science and Technology;Peking University;
..............page:168-174
Circuit modeling and performance analysis of SWCNT bundle 3D interconnects
Qian Libo;Zhu Zhangming;Ding Ruixue;Yang Yintang;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;
Qian Libo;Zhu Zhangming;Ding Ruixue;Yang Yintang;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;
..............page:175-181
Simulation of through via bottom–up copper plating with accelerator for the filling of TSVs
Wu Heng;Tang Zhen’an;Wang Zhu;Cheng Wan;Yu Daquan;Dalian University of Technology;Jiangsu R & D Center for Internet of Things;Institute of Microelectronics;Chinese Academy of Sciences;National Center for Advanced Packaging;
Wu Heng;Tang Zhen’an;Wang Zhu;Cheng Wan;Yu Daquan;Dalian University of Technology;Jiangsu R & D Center for Internet of Things;Institute of Microelectronics;Chinese Academy of Sciences;National Center for Advanced Packaging;
..............page:182-186