0253-4177
2012 Issue 8
A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices
Huang Haiyun~;Wang Dejun~1;Li Wenbo;Xu Yue Qin Huibin;and Hu Yongcai 1 School of Electronic Science and Technology;Faculty of Electronic Information and Electronic Engineering;Dalian University of Technology;Dalian 116024;China 2 Institute of New Electron Devices;Hangzhou Dianzhi University;Hangzhou 310018;China 3 College of Electronic Science & Engineering;Nanjing University of Posts and Telecommunications;Nanjing 210003;China
Huang Haiyun~;Wang Dejun~1;Li Wenbo;Xu Yue Qin Huibin;and Hu Yongcai 1 School of Electronic Science and Technology;Faculty of Electronic Information and Electronic Engineering;Dalian University of Technology;Dalian 116024;China 2 Institute of New Electron Devices;Hangzhou Dianzhi University;Hangzhou 310018;China 3 College of Electronic Science & Engineering;Nanjing University of Posts and Telecommunications;Nanjing 210003;China
..............page:60-66
Influence of surface preparation on atomic layer deposition of Pt films
Ge Liang;Hu Cheng~1;Zhu Zhiwei~1;Zhang Wei Wu Dongping;and Zhang Shili 1 State Key Laboratory of ASIC and System;School of Microelectronics;Fudan University;Shanghai 200433;China 2 Solid-State Electronics;the Angstrom Laboratory;Uppsala University;Box 534;75121 Uppsala;Sweden
Ge Liang;Hu Cheng~1;Zhu Zhiwei~1;Zhang Wei Wu Dongping;and Zhang Shili 1 State Key Laboratory of ASIC and System;School of Microelectronics;Fudan University;Shanghai 200433;China 2 Solid-State Electronics;the Angstrom Laboratory;Uppsala University;Box 534;75121 Uppsala;Sweden
..............page:32-36
An SEU-hardened latch with a triple-interlocked structure
Li Yuanqing;Yao Suying;Xu Jiangtao;and Gao Jing School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
Li Yuanqing;Yao Suying;Xu Jiangtao;and Gao Jing School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
..............page:89-96
A PNPN tunnel field-effect transistor with high-k gate and Iow-k fringe dielectrics
Cui Ning;Liang Renrong;Wang Jing;Zhou Wei;and Xu Jun Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University; Beijing 100084;China
Cui Ning;Liang Renrong;Wang Jing;Zhou Wei;and Xu Jun Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University; Beijing 100084;China
..............page:54-59
A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications
Zhang Junyu;Wang Yong;Liu Jing;Zhang Manhong Xu Zhongguang;Huo Zongliang;and Liu Ming Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Zhang Junyu;Wang Yong;Liu Jing;Zhang Manhong Xu Zhongguang;Huo Zongliang;and Liu Ming Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:67-70
High-speed through-silicon via filling method using Cu-cored solder balls
He Ran~1;Wang Huijuan~1;Yu Daquan;Zhou Jing Dai Fengwei~1;Song Chongshen~1;Sun Yu;and Wan Lixi 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Jiangsu R&D Center for Internet of Things;Wuxi 214315;China
He Ran~1;Wang Huijuan~1;Yu Daquan;Zhou Jing Dai Fengwei~1;Song Chongshen~1;Sun Yu;and Wan Lixi 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Jiangsu R&D Center for Internet of Things;Wuxi 214315;China
..............page:135-138
Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films*
Jia Baoshan;Wang Yunhua;Zhou Lu;Bai Duanyuan; Qiao Zhongliang;Gao Xin and Bo Baoxue State Key Laboratory on High Power Semiconductor Lasers;Changchun University of Science and Technology; Changchun 130022;China
Jia Baoshan;Wang Yunhua;Zhou Lu;Bai Duanyuan; Qiao Zhongliang;Gao Xin and Bo Baoxue State Key Laboratory on High Power Semiconductor Lasers;Changchun University of Science and Technology; Changchun 130022;China
..............page:28-31
Structural,electronic,magnetic and optical properties of neodymium chalcogenides using LSDA+U method
A Shankar;D P Rai;Sandeep;and R K Thapa Condensed Matter Theory Group;Department of Physics;Mizoram University;Aizawl;Mizoram-796 004;India
A Shankar;D P Rai;Sandeep;and R K Thapa Condensed Matter Theory Group;Department of Physics;Mizoram University;Aizawl;Mizoram-796 004;India
..............page:9-14
Progress in Group Ⅲ nitride semiconductor electronic devices*
Hao Yue ~1;Zhang Jinfeng;Shen Bo~2;and Liu Xinyu 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University; Xi’an 710071;China 2 School of Physics;Peking University;Beijing 100871;China 3 Key Laboratory of Microwave Devices and Integrated Circuits;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
Hao Yue ~1;Zhang Jinfeng;Shen Bo~2;and Liu Xinyu 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University; Xi’an 710071;China 2 School of Physics;Peking University;Beijing 100871;China 3 Key Laboratory of Microwave Devices and Integrated Circuits;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
..............page:1-8
A 10-Gb/s inductor-less variable gain amplifier with a linear-in-dB characteristic and DC-offset cancellation
Liu Chang;Yan Yuepeng~1;Goh Wang-Ling~2;Xiong Yongzhong Zhang Lijun~1;and Mohammad Madihian~3 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Nanyang Technological University;Singapore 639798;Singapore 3 Institute of Microelectronics;Singapore 117685;Singapore
Liu Chang;Yan Yuepeng~1;Goh Wang-Ling~2;Xiong Yongzhong Zhang Lijun~1;and Mohammad Madihian~3 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Nanyang Technological University;Singapore 639798;Singapore 3 Institute of Microelectronics;Singapore 117685;Singapore
..............page:97-101
Ways to suppress click and pop for class D amplifiers
Wang Haishi;Zhang Bo;and Sun Jiang State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Wang Haishi;Zhang Bo;and Sun Jiang State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:107-111
Double-πfully scalable model for on-chip spiral inductors
Liu Jun;Zhong Lin;Wang Huang~1;Wen Jincai Sun Lingling;Yu Zhiping;and Marissa Condon~2 1 Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China 2 School of Electronic Engineering;Dublin City University;Dublin 9;Ireland
Liu Jun;Zhong Lin;Wang Huang~1;Wen Jincai Sun Lingling;Yu Zhiping;and Marissa Condon~2 1 Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China 2 School of Electronic Engineering;Dublin City University;Dublin 9;Ireland
..............page:71-81
Characteristics of a GaN-based Gunn diode for THz signal generation
R K Parida~1;N C Agrawala~2;G N Dash~3;and A K Panda~4; 1 ITER;Siksha ’O’ Anusandhan University;Bhubaneswar;Odisha;751030;India 2 Rengali College;Sambalpur;Odisha;India 3 Sambalpur University;Sambalpur;Odisha;768019;India 4 National Institute of Science & Technology;Berhampur;Odisha;761008;India
R K Parida~1;N C Agrawala~2;G N Dash~3;and A K Panda~4; 1 ITER;Siksha ’O’ Anusandhan University;Bhubaneswar;Odisha;751030;India 2 Rengali College;Sambalpur;Odisha;India 3 Sambalpur University;Sambalpur;Odisha;768019;India 4 National Institute of Science & Technology;Berhampur;Odisha;761008;India
..............page:37-43
A CMOS frequency generation module for 60-GHz applications
Zhou Chunyuan;Zhang Lei;Wang Hongrui;and Qian He Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Zhou Chunyuan;Zhang Lei;Wang Hongrui;and Qian He Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:102-106
Optimization of a Cu CMP process modeling parameters of nanometer integrated circuits
Ruan Wenbiao;Chen Lan;Ma Tianyu;Fang Jingjing Zhang He;and Ye Tianchun Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Ruan Wenbiao;Chen Lan;Ma Tianyu;Fang Jingjing Zhang He;and Ye Tianchun Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:127-134
Dielectric response and electric properties of organic semiconducting phthalocyanine thin films
A.M.Saleh~1;S.M.Hraibat~1;R.M-L.Kitaneh~1;M.M.Abu-Samreh~1;and S.M.Musameh~2 1 Physics Department;Al-Quds University;Jerusalem;Palestine 2 Physics Department;An-Najah University;Nablus.Palestine
A.M.Saleh~1;S.M.Hraibat~1;R.M-L.Kitaneh~1;M.M.Abu-Samreh~1;and S.M.Musameh~2 1 Physics Department;Al-Quds University;Jerusalem;Palestine 2 Physics Department;An-Najah University;Nablus.Palestine
..............page:15-21
Diagnosis of soft faults in analog integrated circuits based on fractional correlation
Deng Yong;Shi Yibing;and Zhang Wei 1 School of Automation Engineering;University of Electronic Science and Technology of China;Chengdu 611731;China 2School of Electronics and Information Engineering;Southwest Petroleum University;Chengdu 610500;China
Deng Yong;Shi Yibing;and Zhang Wei 1 School of Automation Engineering;University of Electronic Science and Technology of China;Chengdu 611731;China 2School of Electronics and Information Engineering;Southwest Petroleum University;Chengdu 610500;China
..............page:117-122
A novel antifuse structure based on amorphous bismuth zinc niobate thin films
Wang Gang;Li Wei;Li Ping;Li Zuxiong Fan Xue;and Jiang Jing State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Wang Gang;Li Wei;Li Ping;Li Zuxiong Fan Xue;and Jiang Jing State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:44-47
A high-efficiency,low-noise power solution for a dual-channel GNSS RF receiver
Shi Jian;Mo Taishan~2;Le Jianlian~2;Gan Yebing Ma Chengyan~;and Ye Tianchun 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029.China 2 Hangzhou Zhongke Microelectronics Co;Ltd;Hangzhou 310053;China
Shi Jian;Mo Taishan~2;Le Jianlian~2;Gan Yebing Ma Chengyan~;and Ye Tianchun 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029.China 2 Hangzhou Zhongke Microelectronics Co;Ltd;Hangzhou 310053;China
..............page:82-88
A simple and effective method to achieve the successful start-up of a current reference
Han Lei;Wang Yujun~2;Zhang Xiaoxing Dai Yujie~1;and Lii Yingjie 1 Institute of Microelectronics;Nankai University;Tianjin 300457;China 2 Nanda Qiangxin Co.Ltd.;Tianjin 300457;China
Han Lei;Wang Yujun~2;Zhang Xiaoxing Dai Yujie~1;and Lii Yingjie 1 Institute of Microelectronics;Nankai University;Tianjin 300457;China 2 Nanda Qiangxin Co.Ltd.;Tianjin 300457;China
..............page:123-126
Using I-V characteristics to investigate selected contacts for SnO2:F thin films
Shadia.J.Ikhmayies~1 and Riyad N Ahmad-Bitar~2 1 Al Isra University;Faculty of Information Technology;Department of Basic Sciences-Physics;Amman 16197;Jordan 2 University of Jordan;Faculty of Science;Physics Department;Amman 11942;Jordan
Shadia.J.Ikhmayies~1 and Riyad N Ahmad-Bitar~2 1 Al Isra University;Faculty of Information Technology;Department of Basic Sciences-Physics;Amman 16197;Jordan 2 University of Jordan;Faculty of Science;Physics Department;Amman 11942;Jordan
..............page:22-27
ZnO nanowire network transistors based on a self-assembly method
Dai Zhenqing~2;Chen Changxin~1;Zhang Yaozhong Wei Liangming~1;Zhang Jing~1;Xu Dong~1;and Zhang Yafei 1 Key Laboratory for Thin Film and Microfabrication of the Ministry of Education;Research Institute of Micro/Nano Science and Technology;Shanghai Jiao Tong University;Shanghai 200240;China 2 Department of Physics and Chemistry;Hebei Normal University of Science and Technology;Qinhuangdao 066004;China
Dai Zhenqing~2;Chen Changxin~1;Zhang Yaozhong Wei Liangming~1;Zhang Jing~1;Xu Dong~1;and Zhang Yafei 1 Key Laboratory for Thin Film and Microfabrication of the Ministry of Education;Research Institute of Micro/Nano Science and Technology;Shanghai Jiao Tong University;Shanghai 200240;China 2 Department of Physics and Chemistry;Hebei Normal University of Science and Technology;Qinhuangdao 066004;China
..............page:48-53
A 400-MS/s 12-bit current-steering D/A converter
Wang Shaopeng;Ren Yannan;Li Fule and Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Wang Shaopeng;Ren Yannan;Li Fule and Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:112-116