0253-4177
2011 Issue 9
MOCVD epitaxy of InAlN on different templates
Yun Lijun~+;Wei Tongbo;Yan Jianchang;Liu Zhe; Wang Junxi;and Li Jinmin R&D Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Yun Lijun~+;Wei Tongbo;Yan Jianchang;Liu Zhe; Wang Junxi;and Li Jinmin R&D Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:24-28
SRAM single event upset calculation and test using protons in the secondary beam in the BEPC
Wang Yuanming~+;Guo Hongxia;Zhang Fengqi; Zhang Keying;Chen Wei;Luo Yinhong;and Guo Xiaoqiang Northwest Institute of Nuclear Technology;Xi’an 710024;China
Wang Yuanming~+;Guo Hongxia;Zhang Fengqi; Zhang Keying;Chen Wei;Luo Yinhong;and Guo Xiaoqiang Northwest Institute of Nuclear Technology;Xi’an 710024;China
..............page:1-5
Light extraction enhancement of SOI-based erbium/oxygen Co-implanted photonic crystal microcavities
Zhang Jiashun;Wang Yue;Wu Yuanda~+;Zhang Xiaoguang; Jiang Ting;An Junming;Li Jianguang;Wang Hongjie; and Hu Xiongwei State Key Laboratory of Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Zhang Jiashun;Wang Yue;Wu Yuanda~+;Zhang Xiaoguang; Jiang Ting;An Junming;Li Jianguang;Wang Hongjie; and Hu Xiongwei State Key Laboratory of Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:43-45
Design and optimization of a 2.4 GHz RF front-end with an on-chip balun
XuHua~;Wang Lei~2;Shi Yin~1;and Dai Fa Foster~3 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Suzhou-CAS Semiconductor Integrated Technology Co.;Ltd;Suzhou 215021;China 3 Department of Electrical and Computer Engineering;Auburn University;Auburn;AL 36849-5201;USA
XuHua~;Wang Lei~2;Shi Yin~1;and Dai Fa Foster~3 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Suzhou-CAS Semiconductor Integrated Technology Co.;Ltd;Suzhou 215021;China 3 Department of Electrical and Computer Engineering;Auburn University;Auburn;AL 36849-5201;USA
..............page:93-98
A low power 8th order elliptic low-pass filter for a CMMB tuner
Gong Zheng~;Chen Bei~1;Hu Xueqing~1;Shi Yin~1; and Dai Fa Foster~2 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electrical and Computer Engineering;Auburn University;Auburn;AL 36849-5201;USA
Gong Zheng~;Chen Bei~1;Hu Xueqing~1;Shi Yin~1; and Dai Fa Foster~2 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electrical and Computer Engineering;Auburn University;Auburn;AL 36849-5201;USA
..............page:82-88
Electronic structures and transport properties of BN nanodot superlattices of armchair graphene nanoribbons
An Liping~ and Liu Nianhua~ 1 Institute for Advanced Study;Nanchang University;Nanchang 330031;China 2 Department of Physics;Yanshan University;Qinhuangdao 066004;China
An Liping~ and Liu Nianhua~ 1 Institute for Advanced Study;Nanchang University;Nanchang 330031;China 2 Department of Physics;Yanshan University;Qinhuangdao 066004;China
..............page:6-11
Boron removal from molten silicon using sodium-based slags
Yin Changhao~+;Hu Bingfeng;and Huang Xinming Donghai JA Solar Technology Co.;Ltd.;Donghai 222300;China
Yin Changhao~+;Hu Bingfeng;and Huang Xinming Donghai JA Solar Technology Co.;Ltd.;Donghai 222300;China
..............page:12-15
A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines
Dong Junrong~+;Huang Jie;Tian Chao;Yang Hao; and Zhang Haiying Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Dong Junrong~+;Huang Jie;Tian Chao;Yang Hao; and Zhang Haiying Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:89-92
An improved single-loop sigma-delta modulator for GSM applications
Li Hongyi;Wang Yuan~+;Jia Song;and Zhang Xing Key Laboratory of Microelectronic Devices and Circuits;Institute of Microelectronics;Peking University; Beijing 100871;China
Li Hongyi;Wang Yuan~+;Jia Song;and Zhang Xing Key Laboratory of Microelectronic Devices and Circuits;Institute of Microelectronics;Peking University; Beijing 100871;China
..............page:125-132
Effect of charge sharing on the single event transient response of CMOS logic gates
Duan Xueyan;Wang Liyun;and Lai Jinmei~+ State Key Laboratory of ASIC & System;School of Microelectronics;Fudan University;Shanghai 201203;China
Duan Xueyan;Wang Liyun;and Lai Jinmei~+ State Key Laboratory of ASIC & System;School of Microelectronics;Fudan University;Shanghai 201203;China
..............page:119-124
A highly linear baseband G_m-C filter for WLAN application
Yang Lijun~;Gong Zheng~2;Shi Yin~2;and Chen Zhiming~1 1 Department of Electronic Engineering;Xi’an University of Technology;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
Yang Lijun~;Gong Zheng~2;Shi Yin~2;and Chen Zhiming~1 1 Department of Electronic Engineering;Xi’an University of Technology;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
..............page:112-118
Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs
Zhang Yanbo~;Du Yandong~1;Xiong Ying~1;Yang Xiang~1; Han Weihua~;and Yang Fuhua~ 1 Engineering Research Center for Semiconductor Integration Technology;Institute of Semiconductors; Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China 3 State Key Laboratory for Superlattices and Microstructures;Beijing 100083;China
Zhang Yanbo~;Du Yandong~1;Xiong Ying~1;Yang Xiang~1; Han Weihua~;and Yang Fuhua~ 1 Engineering Research Center for Semiconductor Integration Technology;Institute of Semiconductors; Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China 3 State Key Laboratory for Superlattices and Microstructures;Beijing 100083;China
..............page:29-33
Spherical distribution structure of the semiconductor laser diode stack for pumping
Zhao Tianzhuo~1;Yu Jin~1;Liu Yang~1;Zhang Xue~1; Ma Yunfeng~1;and Fan Zhongwei~ 1 Opto-Electronics System Department;The Academy of Opto-Electronics;Chinese Academy of Sciences; Beijing 100094;China 2 Beijing GK Laser Technology Co.;Ltd;Beijing 100192;China
Zhao Tianzhuo~1;Yu Jin~1;Liu Yang~1;Zhang Xue~1; Ma Yunfeng~1;and Fan Zhongwei~ 1 Opto-Electronics System Department;The Academy of Opto-Electronics;Chinese Academy of Sciences; Beijing 100094;China 2 Beijing GK Laser Technology Co.;Ltd;Beijing 100192;China
..............page:50-53
Built-in electric field thickness design for betavoltaic batteries
Chen Haiyang~+;Li Darang;Yin Jianhua;and Cai Shengguo School of Mechanical Engineering;Beijing Institute of Technology;Beijing 100081;China
Chen Haiyang~+;Li Darang;Yin Jianhua;and Cai Shengguo School of Mechanical Engineering;Beijing Institute of Technology;Beijing 100081;China
..............page:62-65
ESD robustness studies on the double snapback characteristics of an LDMOS with an embedded SCR
Jiang Lingli~+;Zhang Bo;Fan Hang;Qiao Ming; and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology; Chengdu 610054;China
Jiang Lingli~+;Zhang Bo;Fan Hang;Qiao Ming; and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology; Chengdu 610054;China
..............page:34-37
Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer
Cai Daolin~;Li Ping~2;Zhai Yahong~2;Song Zhitang~1; and Chen Houpeng~1 1 State Key Laboratory of Functional Materials for Informatics;Laboratory of Nanotechnology;Shanghai Institute of Microsystems and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Cai Daolin~;Li Ping~2;Zhai Yahong~2;Song Zhitang~1; and Chen Houpeng~1 1 State Key Laboratory of Functional Materials for Informatics;Laboratory of Nanotechnology;Shanghai Institute of Microsystems and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:54-57
An ultra high-speed 8-bit timing interleave folding & interpolating analog-to-digital converter with digital foreground calibration technology
Zhang Zhengping~;Wang Yonglu~2;Huang Xingfa~2; Shen Xiaofeng~2;ZhuCan~2;Zhang Lei~1;Yu Jinshan~2; and Zhang Ruitao~2 1 No.24 Research Institute;China Electronics Technology Group Corporation;Chongqing 400060;China 2 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China
Zhang Zhengping~;Wang Yonglu~2;Huang Xingfa~2; Shen Xiaofeng~2;ZhuCan~2;Zhang Lei~1;Yu Jinshan~2; and Zhang Ruitao~2 1 No.24 Research Institute;China Electronics Technology Group Corporation;Chongqing 400060;China 2 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China
..............page:133-139
A 0.18μm CMOS single-inductor single-stage quadrature frontend for GNSS receiver
Li Bing~+;Zhuang Yiqi;Han Yeqi;Xing Xiaoling; Li Zhenrong;and Long Qiang Key Laboratory of the Ministry of Education for Wide Bandgap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
Li Bing~+;Zhuang Yiqi;Han Yeqi;Xing Xiaoling; Li Zhenrong;and Long Qiang Key Laboratory of the Ministry of Education for Wide Bandgap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
..............page:99-105
CMOS high linearity PA driver with an on-chip transformer for W-CDMA application
Fu Jian;Mei Niansong;Huang Yumei~+;and Hong Zhiliang ASIC & System State Key Laboratory;Fudan University;Shanghai 201203;China
Fu Jian;Mei Niansong;Huang Yumei~+;and Hong Zhiliang ASIC & System State Key Laboratory;Fudan University;Shanghai 201203;China
..............page:106-111
Hierarchical distribution network for low skew and high variation-tolerant bufferless resonant clocking
Xu Yi~+;Chen Shuming;and Liu Xiangyuan School of Computer Science and Technology;National University of Defense Technology;Changsha 410073;China
Xu Yi~+;Chen Shuming;and Liu Xiangyuan School of Computer Science and Technology;National University of Defense Technology;Changsha 410073;China
..............page:140-146
30-GHz millimeter-wave carrier generation with single sideband modulation based on stimulated Brillouin scattering
Luo Zhen’ao~+;Xie Liang;Qi Xiaoqiong;and Wang Hui State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Luo Zhen’ao~+;Xie Liang;Qi Xiaoqiong;and Wang Hui State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:16-19
Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD
Wu Chunbo;Zhou Yuqin~+;Li Guorong;and Liu Fengzhen Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
Wu Chunbo;Zhou Yuqin~+;Li Guorong;and Liu Fengzhen Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:147-150
A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT
Hao Mingli~+;Zhang Zongnan;and Zhang Haiying Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Hao Mingli~+;Zhang Zongnan;and Zhang Haiying Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:38-42
A low power CMOS 3.3 Gbps continuous-time adaptive equalizer for serial link
Ju Hao~+;Zhou Yumei;and Zhao Jianzhong Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Ju Hao~+;Zhou Yumei;and Zhao Jianzhong Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:74-81
Sensitive detection of infrared photons using a high-Q microcantilever
Zhang Fengxin~;Zhu Yinfang~;Yang Jinling~; and Cao Lixin~3 1 Research Center of Engineering for Semiconductor Integrated Technology;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 State Key Laboratory of Transducer Technology;Beijing 100080;China 3 National Laboratory for Superconductivity;Institute of Physics and Beijing National Laboratory for Condensed Matter Physics; Chinese Academy of Sciences;Beijing 100190;China
Zhang Fengxin~;Zhu Yinfang~;Yang Jinling~; and Cao Lixin~3 1 Research Center of Engineering for Semiconductor Integrated Technology;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 State Key Laboratory of Transducer Technology;Beijing 100080;China 3 National Laboratory for Superconductivity;Institute of Physics and Beijing National Laboratory for Condensed Matter Physics; Chinese Academy of Sciences;Beijing 100190;China
..............page:66-69
An SPICE model for phase-change memory simulations
Li Xi~+;Song Zhitang;Cai Daolin;Chen Xiaogang; and Chen Houpeng State Key Laboratory of Functional Materials for Informatics;Laboratory of Nanotechnology;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
Li Xi~+;Song Zhitang;Cai Daolin;Chen Xiaogang; and Chen Houpeng State Key Laboratory of Functional Materials for Informatics;Laboratory of Nanotechnology;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
..............page:70-73
Optimization of Al2O3/SiNx stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells
Wu Dawei~+;Jia Rui;Ding Wuchang;Chen Chen;Wu Deqi; Chen Wei;Li Haofeng;Yue Huihui;and Liu Xinyu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Wu Dawei~+;Jia Rui;Ding Wuchang;Chen Chen;Wu Deqi; Chen Wei;Li Haofeng;Yue Huihui;and Liu Xinyu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:58-61
Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer
Zheng Hong~;Cheng Xiaoman~;Tian Haijun~1;and Zhao Geng~2 1 Institute of Material Physics;Key Laboratory of Display Material and Photoelectric Devices;Ministry of Education. Tianjin University of Technology;Tianjin 300384;China 2 School of Science;Tianjin University of Technology;Tianjin 300384;China
Zheng Hong~;Cheng Xiaoman~;Tian Haijun~1;and Zhao Geng~2 1 Institute of Material Physics;Key Laboratory of Display Material and Photoelectric Devices;Ministry of Education. Tianjin University of Technology;Tianjin 300384;China 2 School of Science;Tianjin University of Technology;Tianjin 300384;China
..............page:46-49
Highly sensitive and selective ethanol sensors based on flower-like ZnO nanorods
Liu Li~;Wang Lianyuan~1;Han Yu~1;Li Shouchun~1; Shan Hao~1;Wu Peilin~2;Meng Xin~2;Wei Aiguo~1; and Li Wei~1 1 State Key Laboratory of Superhard Materials;College of Physics;Jilin University;Changchun 130012;China 2 College of Instrumentation and Electrical Engineering;Jilin University;Changchun 130061;China
Liu Li~;Wang Lianyuan~1;Han Yu~1;Li Shouchun~1; Shan Hao~1;Wu Peilin~2;Meng Xin~2;Wei Aiguo~1; and Li Wei~1 1 State Key Laboratory of Superhard Materials;College of Physics;Jilin University;Changchun 130012;China 2 College of Instrumentation and Electrical Engineering;Jilin University;Changchun 130061;China
..............page:20-23