0253-4177
2011 Issue 7
Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime
He Hongyu~+ and Zheng Xueren 1 Faculty of Physics and Optoelectronic Engineering;Guangdong University of Technology;Guangzhou 510006;China 2 School of Electronic and Information Engineering;South China University of Technology;Guangzhou 510640;China
He Hongyu~+ and Zheng Xueren 1 Faculty of Physics and Optoelectronic Engineering;Guangdong University of Technology;Guangzhou 510006;China 2 School of Electronic and Information Engineering;South China University of Technology;Guangzhou 510640;China
..............page:34-37
Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models
Song Kun~+;Chai Changchun;Yang Yintang;Jia Hujun;Zhang Xianjun;and Chen BinKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education;School of Microelectronics;Xidian University;Xi’an 710071;China
Song Kun~+;Chai Changchun;Yang Yintang;Jia Hujun;Zhang Xianjun;and Chen BinKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education;School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:28-33
A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement
Chen Wensuo;Zhang Bo;Fang Jian;and Li Zhaoji State Key Laboratory of Electronic Thin Film and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Chen Wensuo;Zhang Bo;Fang Jian;and Li Zhaoji State Key Laboratory of Electronic Thin Film and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:38-41
Effect of current on the microstructure and performance of （Bi2Te3）0.2（Sb2Te3）0.8 thermoelectric material via field activated and pressure assisted sintering
Chen Ruixue~1;Meng Qingsen~;Fan Wenhao and Wang Zhong 1 College of Material Science and Engineering;Taiyuan University of Technology;Taiyuan 030024;China 2 General Research Institute for Nonferrous Metals;Beijing 100022;China
Chen Ruixue~1;Meng Qingsen~;Fan Wenhao and Wang Zhong 1 College of Material Science and Engineering;Taiyuan University of Technology;Taiyuan 030024;China 2 General Research Institute for Nonferrous Metals;Beijing 100022;China
..............page:9-13
Photoconductive properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag cell
Khasan Sanginovich Karimov~;Muhammad Tariq Saeed~1;Fazal Ahmad Khalid~1; and Zioda Mirzoevna Karieva~3 1 GIK Institute of Engineering Sciences and Technology;Topi 23640;Swabi;Khyber Pakhtunkhwa;Pakistan 2 Physical Technical Institute of Academy of Sciences;Rudaki Ave.33;Dushanbe;734025;Tajikistan 3 Tajik Technical University;Rajabov St.10;Dushanbe;734000;Tajikistan
Khasan Sanginovich Karimov~;Muhammad Tariq Saeed~1;Fazal Ahmad Khalid~1; and Zioda Mirzoevna Karieva~3 1 GIK Institute of Engineering Sciences and Technology;Topi 23640;Swabi;Khyber Pakhtunkhwa;Pakistan 2 Physical Technical Institute of Academy of Sciences;Rudaki Ave.33;Dushanbe;734025;Tajikistan 3 Tajik Technical University;Rajabov St.10;Dushanbe;734000;Tajikistan
..............page:1-4
Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC
Wu Hailei~;Sun Guosheng~1;Yang Ting~1;Yan Guoguo Wang Lei~1;Zhao Wanshun~1;Liu Xingfang Zeng Yiping~1;and Wen Jialiang~2 1 Novel Semiconductor Material Laboratory;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 China Electric Power Research Institute;Beijing 100192;China
Wu Hailei~;Sun Guosheng~1;Yang Ting~1;Yan Guoguo Wang Lei~1;Zhao Wanshun~1;Liu Xingfang Zeng Yiping~1;and Wen Jialiang~2 1 Novel Semiconductor Material Laboratory;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 China Electric Power Research Institute;Beijing 100192;China
..............page:5-8
Sensitivity of MEMS microwave power sensor with the length of thermopile based on Fourier equivalent model
Liu Tong;Liao Xiaoping~+;and Wang Debo Key Laboratory of MEMS of Ministry of Education;Southeast University;Nanjing 210096;China
Liu Tong;Liao Xiaoping~+;and Wang Debo Key Laboratory of MEMS of Ministry of Education;Southeast University;Nanjing 210096;China
..............page:52-56
A sub-sampling 4-bit 1.056-GS/s flash ADC with a novel track and hold amplifier for an IR-UWB receiver
Zhao Yi;Wang Shenjie;Qin Yajie;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Zhao Yi;Wang Shenjie;Qin Yajie;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:62-69
Design of a total-dose radiation hardened monolithic CMOS DC-DC boost converter
Liu Zhi~+;Ning Hongying~3;Yu Hongbo~2;and Liu Youbao 1 Xi’an Institute of Microelectronics Technology;Xi’an 710054;China 2 Xi’an TAIYI Electronic Co.;Ltd;Xi’an 710054;China 3 Xi’an University of Technology;Xi’an 710048;China
Liu Zhi~+;Ning Hongying~3;Yu Hongbo~2;and Liu Youbao 1 Xi’an Institute of Microelectronics Technology;Xi’an 710054;China 2 Xi’an TAIYI Electronic Co.;Ltd;Xi’an 710054;China 3 Xi’an University of Technology;Xi’an 710048;China
..............page:97-102
Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates
Su Shichen~+;Yang Xiaodong~1;and Hu Candong 1 Key Laboratory of Electroluminescent Devices;Department of Education of Guangdong Province;Institute of Opto-Electronic Materials and Technology;South China Normal University;Guangzhou 510631;China 2 Key Laboratory of Excited State Processes;Changchun Institute of Optics;Fine Mechanics;and Physics;Chinese Academy of Sciences;Changchun 130033;China
Su Shichen~+;Yang Xiaodong~1;and Hu Candong 1 Key Laboratory of Electroluminescent Devices;Department of Education of Guangdong Province;Institute of Opto-Electronic Materials and Technology;South China Normal University;Guangzhou 510631;China 2 Key Laboratory of Excited State Processes;Changchun Institute of Optics;Fine Mechanics;and Physics;Chinese Academy of Sciences;Changchun 130033;China
..............page:49-51
Simulation study of new 3-terminal devices for high speed STT-RAM
Zhang Shuchao~+;Hu Jiangfeng~2;Chen Peiyi~1;and Deng Ning 1 Institute of Microelectronics;Tsinghua University;Beijing 100084;China 2 Data Storage Institute;A*STAR;117608;Singapore
Zhang Shuchao~+;Hu Jiangfeng~2;Chen Peiyi~1;and Deng Ning 1 Institute of Microelectronics;Tsinghua University;Beijing 100084;China 2 Data Storage Institute;A*STAR;117608;Singapore
..............page:46-48
Reducing test-data volume and test-power simultaneously in LFSR reseeding-based compression environment
Wang Weizheng;Kuang Jishun~+;You Zhiqiang;and Liu Peng College of Information Science & Engineering;Hunan University;Changsha 410082;China
Wang Weizheng;Kuang Jishun~+;You Zhiqiang;and Liu Peng College of Information Science & Engineering;Hunan University;Changsha 410082;China
..............page:115-121
A novel high reliability CMOS SRAM cell
Xie Chengmin~+;Wang Zhongfang;Wu Longsheng and Liu Youbao Computer Research & Design Department;Xi’an Microelectronic Technique Institutes;Xi’an 710054;China
Xie Chengmin~+;Wang Zhongfang;Wu Longsheng and Liu Youbao Computer Research & Design Department;Xi’an Microelectronic Technique Institutes;Xi’an 710054;China
..............page:131-135
A wideband CMOS VGLNA based on single-to-differential stage and resistive attenuator for TV tuners
Han Kefeng;Tan Xi~+;Tang Zhangwen;and Min HaoState Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Han Kefeng;Tan Xi~+;Tang Zhangwen;and Min HaoState Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:74-80
On modeling the digital gate delay under process variation
Gao Mingzhi~+;Ye Zuochang;Wang Yan;and Yu Zhiping Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Gao Mingzhi~+;Ye Zuochang;Wang Yan;and Yu Zhiping Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:122-130
A low noise high efficiency buck DC-DC converter with sigma-delta modulation
Cai Shujiang;Pi Changming;Yan Wei;and Li Wenhong State Key Laboratory of ASIC & Systems;Fudan University;Shanghai 201203;China
Cai Shujiang;Pi Changming;Yan Wei;and Li Wenhong State Key Laboratory of ASIC & Systems;Fudan University;Shanghai 201203;China
..............page:81-88
A pseudo differential Gm-C complex filter with frequency tuning for IEEE802.15.4 applications
Cheng Xin;Zhong Lungui;Yang Haigang;Liu Fei1; and Gao Tongqiang 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 3 Department of Electronic Information and Electric Engineering;Fujian University of Technology;Fuzhou 350108;China
Cheng Xin;Zhong Lungui;Yang Haigang;Liu Fei1; and Gao Tongqiang 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 3 Department of Electronic Information and Electric Engineering;Fujian University of Technology;Fuzhou 350108;China
..............page:89-96
Effect of alkaline slurry on the electric character of the pattern Cu wafer
Hu Yi;Liu Yuling;Liu Xiaoyan;He Yangang Wang Liran;and Zhang Baoguo Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China
Hu Yi;Liu Yuling;Liu Xiaoyan;He Yangang Wang Liran;and Zhang Baoguo Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China
..............page:150-152
Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices
Li Yongliang and Xu Qiuxia Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Li Yongliang and Xu Qiuxia Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:145-149
A 50 MHz-1 GHz high linearity CATV amplifier with a 0.15μm InGaAs PHEMT process
Xu Jian~+;Wang Zhigong;Zhang Ying;and Huang Jing Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China
Xu Jian~+;Wang Zhigong;Zhang Ying;and Huang Jing Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China
..............page:70-73
A new high voltage SOI LDMOS with triple RESURF structure
Hu Xiarong~+;Zhang Bo;Luo Xiaorong;Yao Guoliang Chen Xi;and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Hu Xiarong~+;Zhang Bo;Luo Xiaorong;Yao Guoliang Chen Xi;and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:42-45
Design of a high performance CMOS charge pump for phase-locked loop synthesizers
Li Zhiqun~;Zheng Shuangshuang~3;and Hou Ningbing 1 Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China 2 RFIC and System Engineering Research Center of the Ministry of Education of China;Southeast University; Nanjing 210096;China 3 School of Integrated Circuits;Southeast University;Nanjing 210096;China
Li Zhiqun~;Zheng Shuangshuang~3;and Hou Ningbing 1 Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China 2 RFIC and System Engineering Research Center of the Ministry of Education of China;Southeast University; Nanjing 210096;China 3 School of Integrated Circuits;Southeast University;Nanjing 210096;China
..............page:103-107
A novel structure of silicon-on-insulator microring biosensor based on Young’s two-slit interference and its simulation
Su Baoqing Wang Chunxia~+;Kan Qiang Li Junhua Xie Yiyang Wang Zhenzhen and Chen Hongda State Key Laboratory Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Su Baoqing Wang Chunxia~+;Kan Qiang Li Junhua Xie Yiyang Wang Zhenzhen and Chen Hongda State Key Laboratory Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:57-61
A 9.8-mW 1.2-GHz CMOS frequency synthesizer with a low phase-noise LC-VCO and an I/Q frequency divider
Li Zhenrong;Zhuang Yiqi;Li Bing;and Jin Gang Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
Li Zhenrong;Zhuang Yiqi;Li Bing;and Jin Gang Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
..............page:108-114
A process-insensitive thermal protection circuit
Zhao Lei~+;Zhang Haiying;Huang Shuilong and Wang Xiaosong Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Zhao Lei~+;Zhang Haiying;Huang Shuilong and Wang Xiaosong Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:142-144
A radiation-hardened SOl-based FPGA
Han Xiaowei~+;Wu Lihua;Zhao Yan i Yan Zhang Qianli;Chen Liang;Zhang Guoquan;Li Jianzhong Yang Bo Gao Jiantou Wang Jian;Li Ming;Liu Guizhai Zhang Feng Guo Xufeng;Stanley L.Chen;Liu Zhongli Yu Fang and Zhao Kai Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Han Xiaowei~+;Wu Lihua;Zhao Yan i Yan Zhang Qianli;Chen Liang;Zhang Guoquan;Li Jianzhong Yang Bo Gao Jiantou Wang Jian;Li Ming;Liu Guizhai Zhang Feng Guo Xufeng;Stanley L.Chen;Liu Zhongli Yu Fang and Zhao Kai Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:136-141
New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs
Li Cong~+;Zhuang Yiqi~1;and Han Ru 1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education; School of Microelectronics;Xidian University;Xi’an 710071;China 2 Aviation Microelectronics Center;Northwestern Polytechnic University;Xi’an 710072;China
Li Cong~+;Zhuang Yiqi~1;and Han Ru 1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education; School of Microelectronics;Xidian University;Xi’an 710071;China 2 Aviation Microelectronics Center;Northwestern Polytechnic University;Xi’an 710072;China
..............page:20-27
Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET
Ashwani K.Rana~;Narottam Chand~2;and Vinod Kapoor~1 1 Department of Electronics and Communication;National Institute of Technology;Hamirpur;Hamirpur-177005;India 2 Department of Computer Science and Engineering;National Institute of Technology;Hamirpur;Hamirpur-177005;India
Ashwani K.Rana~;Narottam Chand~2;and Vinod Kapoor~1 1 Department of Electronics and Communication;National Institute of Technology;Hamirpur;Hamirpur-177005;India 2 Department of Computer Science and Engineering;National Institute of Technology;Hamirpur;Hamirpur-177005;India
..............page:14-19