0253-4177
2011 Issue 2
A low voltage and small hysteresis C60 thin film transistor
Zhou Jianlin~+ and Chen Rengang Department of Electronic Engineering;College of Communication and Electronics;Chongqing University;Chongqing 400044;China
Zhou Jianlin~+ and Chen Rengang Department of Electronic Engineering;College of Communication and Electronics;Chongqing University;Chongqing 400044;China
..............page:48-52
Impact of [110]/(001) uniaxial stress on valence band structure and hole effective mass of silicon
Ma Jianli~+;Zhang Heming;Song Jianjun;Wang Guanyu;Wang Xiaoyan;and Xu Xiaobo Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;Xidian University;Xi’an 710071;China
Ma Jianli~+;Zhang Heming;Song Jianjun;Wang Guanyu;Wang Xiaoyan;and Xu Xiaobo Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;Xidian University;Xi’an 710071;China
..............page:6-10
Forward gated-diode method for parameter extraction of MOSFETs
Zhang Chenfei~;Ma Chenyue~3;Guo Xinjie~3;Zhang Xiufang~3;He Jin~;Wang Guozeng~1;Yang Zhang~1;and Liu Zhiwei~11 Peking University Shenzhen SOC Key Laboratory;PKU HKUST Shenzhen Institute;Shenzhen 518057;China2 Key Laboratory of Integrated Microsystems;School of Computer & Information Engineering;Peking UniversityShenzhen Graduate School;Shenzhen 518055;China3 TSRC;Institute of Microelectronics;School of Electronic Engineering and Computer Science;Peking University;Beijing 100871;China
Zhang Chenfei~;Ma Chenyue~3;Guo Xinjie~3;Zhang Xiufang~3;He Jin~;Wang Guozeng~1;Yang Zhang~1;and Liu Zhiwei~11 Peking University Shenzhen SOC Key Laboratory;PKU HKUST Shenzhen Institute;Shenzhen 518057;China2 Key Laboratory of Integrated Microsystems;School of Computer & Information Engineering;Peking UniversityShenzhen Graduate School;Shenzhen 518055;China3 TSRC;Institute of Microelectronics;School of Electronic Engineering and Computer Science;Peking University;Beijing 100871;China
..............page:23-27
Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface
Wang Liancheng~+;Guo Enqing;Liu Zhiqiang;Yi Xiaoyan;and Wang Guohong Lighting Research and Development Center;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Wang Liancheng~+;Guo Enqing;Liu Zhiqiang;Yi Xiaoyan;and Wang Guohong Lighting Research and Development Center;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:61-64
Spin transport properties in double quantum rings connected in series
Du Jian Wang Suxin Pan Jianghong 1 Department of Physics;Hebei Normal College for Nationalities;Chengde 067000;China 2 College of Physics and Technology;Guangxi Normal University;Guilin 541004;China
Du Jian Wang Suxin Pan Jianghong 1 Department of Physics;Hebei Normal College for Nationalities;Chengde 067000;China 2 College of Physics and Technology;Guangxi Normal University;Guilin 541004;China
..............page:1-5
16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides
Zhao Lei;An Junming~+;Zhang Jiashun;Song Shijiao;Wu Yuanda;and Hu Xiongwei State Key Laboratory of Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Zhao Lei;An Junming~+;Zhang Jiashun;Song Shijiao;Wu Yuanda;and Hu Xiongwei State Key Laboratory of Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:65-68
A baseband LPF for GSM,TD-SCDMA and WCDMA multi-mode transmitters
Yu Yongchang;Han Kefeng;Wang Lifang;Tan Xi~+;and Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Yu Yongchang;Han Kefeng;Wang Lifang;Tan Xi~+;and Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:85-90
A differential low-voltage high gain current-mode integrated RF receiver front-end
Wang Chunhua~+;Ma Minglin;Sun Jingru;Du Sichun;Guo Xiaorong;and He Haizhen School of Information Science and Technology;Hunan University;Changsha 410082;China
Wang Chunhua~+;Ma Minglin;Sun Jingru;Du Sichun;Guo Xiaorong;and He Haizhen School of Information Science and Technology;Hunan University;Changsha 410082;China
..............page:120-125
Growth of SiO2 nanowires on different substrates using Au as a catalyst
Li Yuguo~+;Yang Aichun;Zhuo Boshi;Peng Ruiqin;and Zheng Xuelei Semiconductor Institute;College of Physics and Electronics;Shandong Normal University;Jinan 250014;China
Li Yuguo~+;Yang Aichun;Zhuo Boshi;Peng Ruiqin;and Zheng Xuelei Semiconductor Institute;College of Physics and Electronics;Shandong Normal University;Jinan 250014;China
..............page:19-22
Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect
Zhou Jianhua~;Gao Minghui~1;S.K.Pang~1;and Zou Shichang~1 Grace Semiconductor Manufacturing Corporation;Shanghai 201203;China2 Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 20050;China3 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
Zhou Jianhua~;Gao Minghui~1;S.K.Pang~1;and Zou Shichang~1 Grace Semiconductor Manufacturing Corporation;Shanghai 201203;China2 Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 20050;China3 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:33-37
A low-power triple-mode sigma-delta DAC for reconfigurable(WCDMA/TD-SCDMA/GSM) transmitters
Qiu Dong;Yi Ting~+;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Qiu Dong;Yi Ting~+;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:96-101
Structural and optical properties of polycrystalline CdS thin films deposited by electron beam evaporation
Yang Dingyu~+;Zhu Xinghua;Wei Zhaorong;Yang Weiqing;Li Lezhong;Yang Jun;and Gao Xiuying School of Optoelectronic Technology;Chengdu University of Information Technology;Chengdu 610225;China
Yang Dingyu~+;Zhu Xinghua;Wei Zhaorong;Yang Weiqing;Li Lezhong;Yang Jun;and Gao Xiuying School of Optoelectronic Technology;Chengdu University of Information Technology;Chengdu 610225;China
..............page:15-18
A wideband low power low phase noise dual-modulus prescaler
Lei Xuemei~;Wang Zhigong~;and Wang Keping~11 Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China2 Inner Mongolia University;Hohhot 010021;China
Lei Xuemei~;Wang Zhigong~;and Wang Keping~11 Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China2 Inner Mongolia University;Hohhot 010021;China
..............page:130-136
A thick SOI UVLD LIGBT on partial membrane
Wang Zhuo~+;Ye Jun;Lei Lei;Qiao Ming;Zhang Bo;and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technologyof China;Chengdu 610054;China
Wang Zhuo~+;Ye Jun;Lei Lei;Qiao Ming;Zhang Bo;and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technologyof China;Chengdu 610054;China
..............page:57-60
Super junction LDMOS with enhanced dielectric layer electric field for high breakdown voltage
Wang Wenlian~;Zhang Bo~2;and Li Zhaoji~2 1 State Key Laboratory of Electronic Measurement Technology;North University of China;Taiyuan 030051;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 641500;China
Wang Wenlian~;Zhang Bo~2;and Li Zhaoji~2 1 State Key Laboratory of Electronic Measurement Technology;North University of China;Taiyuan 030051;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 641500;China
..............page:28-32
A novel analog/digital reconfigurable automatic gain control with a novel DC offset cancellation circuit
He Xiaofeng~;Mo Taishan~2;Ma Chengyan~2;and Ye Tianchun~11 Institute of Microelectronics;Chinese Academy of Science;Beijing 100029;China2 Hangzhou Zhongke Microelectronics Co;Ltd;Hangzhou 310053;China
He Xiaofeng~;Mo Taishan~2;Ma Chengyan~2;and Ye Tianchun~11 Institute of Microelectronics;Chinese Academy of Science;Beijing 100029;China2 Hangzhou Zhongke Microelectronics Co;Ltd;Hangzhou 310053;China
..............page:79-84
A novel structure in reducing the on-resistance of a VDMOS
Yang Yonghui~;Tang Zhaohuan~;Zhang Zhengyuan~;Liu Yong~;Wang Zhikuan~1;Tan Kaizhou~;and Feng Zhicheng~11 Sichuan Institute of Solid-State Circuits;CETC;Chongqing 400060;China2 National Laboratory of Analog ICs;Chongqing 400060;China
Yang Yonghui~;Tang Zhaohuan~;Zhang Zhengyuan~;Liu Yong~;Wang Zhikuan~1;Tan Kaizhou~;and Feng Zhicheng~11 Sichuan Institute of Solid-State Circuits;CETC;Chongqing 400060;China2 National Laboratory of Analog ICs;Chongqing 400060;China
..............page:44-47
A CMOS variable gain LNA for UWB receivers
Chen Feihua~;Li Lingyun~1;Duo Xinzhong~3;Tian Tong~1;and Sun Xiaowei~1 Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China3 Semiconductor Manufacturing International Corporation;Shanghai 201203;China
Chen Feihua~;Li Lingyun~1;Duo Xinzhong~3;Tian Tong~1;and Sun Xiaowei~1 Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China3 Semiconductor Manufacturing International Corporation;Shanghai 201203;China
..............page:91-95
A 10-bit 80-MS/s opamp-sharing pipelined ADC with a switch-embedded dual-input MDAC
Yin Rui~;Liao Youchun~2;Zhang Wei~1;and Tang Zhangwen~1 ASIC & System State Key Laboratory;Fudan University;Shanghai 201203;China2 Ratio Microelectronics Co.;Ltd;Shanghai 200433;China
Yin Rui~;Liao Youchun~2;Zhang Wei~1;and Tang Zhangwen~1 ASIC & System State Key Laboratory;Fudan University;Shanghai 201203;China2 Ratio Microelectronics Co.;Ltd;Shanghai 200433;China
..............page:102-107
Structural and optical properties of Cd0.8Zn0.2S thin films
Di Xia;Tian Caijuan;Tang Rongzhe;Li Wei~+;Feng Lianghuan;Zhang Jingquan;Wu Lili;and Lei Zhi College of Materials Science and Engineering;Sichuan University;Chengdu 610064;China
Di Xia;Tian Caijuan;Tang Rongzhe;Li Wei~+;Feng Lianghuan;Zhang Jingquan;Wu Lili;and Lei Zhi College of Materials Science and Engineering;Sichuan University;Chengdu 610064;China
..............page:11-14
An improved nonlinear model of HEMTs with independent transconductance tail-off fitting
Liu Linsheng~+ School of Electronic Engineering;University of Electronic Science and Technology of China;Chengdu 611731;China
Liu Linsheng~+ School of Electronic Engineering;University of Electronic Science and Technology of China;Chengdu 611731;China
..............page:38-43
Comparison of the copper and gold wire bonding processes for LED packaging
Chen Zhaohui~1;Liu Yong~2;and Liu Sheng~ 1 Research Institute of Micro/Nano Science and Technology;Shanghai Jiaotong University;Shanghai 200240;China 2 Wuhan National Laboratory for Optoelectronics;Huazhong University of Science & Technology;Wuhan 430074;China 3 Institute of Microsystems;School of Mechanical Science and Engineering;Huazhong University of Science & Technology; Wuhan 430074;China
Chen Zhaohui~1;Liu Yong~2;and Liu Sheng~ 1 Research Institute of Micro/Nano Science and Technology;Shanghai Jiaotong University;Shanghai 200240;China 2 Wuhan National Laboratory for Optoelectronics;Huazhong University of Science & Technology;Wuhan 430074;China 3 Institute of Microsystems;School of Mechanical Science and Engineering;Huazhong University of Science & Technology; Wuhan 430074;China
..............page:69-72
A new shallow trench and planar gate MOSFET structure based on VDMOS technology
Wang Cailin~ and Sun Cheng~21 Department of Electronics Engineering;Xi’an University of Technology;Xi’an 710048;China2 CSMC Technologies Corporation;Wuxi 214061;China
Wang Cailin~ and Sun Cheng~21 Department of Electronics Engineering;Xi’an University of Technology;Xi’an 710048;China2 CSMC Technologies Corporation;Wuxi 214061;China
..............page:53-56
Reset noise reduction through column-level feedback reset in CMOS image sensors
Li Binqiao;Xu Jiangtao~+;Xie Shuang;and Sun Zhongyan School of Electronics and Information Engineering;Tianjin University;Tianjin 300072;China
Li Binqiao;Xu Jiangtao~+;Xie Shuang;and Sun Zhongyan School of Electronics and Information Engineering;Tianjin University;Tianjin 300072;China
..............page:137-141
Low power mapping for AND/XOR circuits and its application in searching the best mixed-polarity
Wang Pengjun~+ and Li Hui Institute of Circuits and Systems;Ningbo University;Ningbo 315211;China
Wang Pengjun~+ and Li Hui Institute of Circuits and Systems;Ningbo University;Ningbo 315211;China
..............page:108-113
A low-power 10-bit 250-KSPS cyclic ADC with offset and mismatch correction
Zhao Hongliang~;Zhao Yiqiang~1;Geng Junfeng~1;Li Peng~1;and Zhang Zhisheng~11 School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China2 College of Physics;Liaoning University;Shenyang 110036;China
Zhao Hongliang~;Zhao Yiqiang~1;Geng Junfeng~1;Li Peng~1;and Zhang Zhisheng~11 School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China2 College of Physics;Liaoning University;Shenyang 110036;China
..............page:114-119
A 100-MHz bandpass sigma-delta modulator with a 75-dB dynamic range for IF receivers
Yuan Yudan~+;Li Li;Chang Hong;Guo Yawei;Cheng Xu~+;and Zeng Xiaoyang State Key Laboratory of ASIC& System;Fudan University;Shanghai 201203;China
Yuan Yudan~+;Li Li;Chang Hong;Guo Yawei;Cheng Xu~+;and Zeng Xiaoyang State Key Laboratory of ASIC& System;Fudan University;Shanghai 201203;China
..............page:73-78
Novel photoresist stripping technology using steam-water mixture
Wang Lei~+;Hui Yu;Gao Chaoqun;and Jing Yupeng Microelectronic Equipment Technology Department;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Wang Lei~+;Hui Yu;Gao Chaoqun;and Jing Yupeng Microelectronic Equipment Technology Department;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:142-148
A 1.0 V differential VCO in 0.13 μm CMOS technology
Cao Shengguo;Han Kefeng;Tan Xi~+;Yan Na;and Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai;201203;China
Cao Shengguo;Han Kefeng;Tan Xi~+;Yan Na;and Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai;201203;China
..............page:126-129