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Chinese Journal of Semiconductors
0253-4177
2007 Issue 4
Information for authors
..............page:插1,633
Electromigration of Typical Sn-Based Solder Bump
Yu Chun;Li Peilin;Liu Junyan;Lu Hao;Chen Junmei
..............page:619-624
Design of a High-Speed Low-Power 9-Port Register File
Cong Gaojian;Qi Jiayue
..............page:614-618
Study of Micro-Structure Ethanol Gas Sensor Based on La0.7Sr0.3FeO3
Liu Li;Zhang Tong;Qi Qi;Chen Weiyou;Xu Baokun
..............page:610-613
Research and Design of SPDT RF MEMS Switch
Huang Jiwei;Wang Zhigong
..............page:604-609
Noise as a Representation for CTR of Optoelectronic Coupled Devices
Hu Jin;Du Lei;Zhuang Yiqi;He Liang;Bao Junlin;Huang Xiaojun;Chen Chunxia;Wei Tao
..............page:597-603
Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector
Liu Zongshun;Zhao Degang;Zhu Jianjun;Zhang Shuming;Duan Lihong;Wang Hai;Shi Yongsheng;Liu Wenbao;Zhang Shuang;Jiang Desheng;Yang Hui
..............page:592-596
5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End
Jiao Shilong;Chen Tangsheng;Qian Feng;Feng Ou;Jiang Youquan;Li Fuxiao;Shao Kai;Ye Yutang
..............page:587-591
Analysis of Envelope Elimination and Restoration RF Power Amplifier
Zhi Chuande;Yang Huazhong
..............page:582-586
RTS Noise in Ultra-Thin Oxide nMOSFET under High Gate Bias
Bao Li;Zhuang Yiqi;Bao Junlin;Li Weihua
..............page:576-581
Research on InP-Based AlAs/In0.53Ga0.47As RTD
Gao Jinhuan;Yang Ruixia;Wu Yibin;Liu Yuewei;Shang Yaohui;Yang Kewu
..............page:573-575
A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs
Lu Jing;Wang Yan;Ma Long;Yu Zhiping
..............page:567-572
Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates
Ma Long;Zhang Yang;Dai Yang;Yang Fuhua;Zeng Yiping;Wang Liangchen
..............page:563-566
Investigation of Back Contacts for CdS/CdTe Solar Cells
Li Wei;Feng Lianghuan;Wu Lili;Cai Yaping;Zheng Jiagui;Cai Wei;Zhang Jingquan;Li Bing;Lei Zhi;Jin Yong
..............page:558-562
Synthesis and Electrical Transmission Characteristics of Type-Ⅰ Ba8Ga16ZnxSi30-x Clathrates
Deng Shukang;Tang Xinfeng;Xiong Cong;Zhang Qingjie
..............page:553-557
Key Techniques of Frequency Synthesizer for WLAN Receivers
Tang Lu;Wang Zhigong;Xu Yong;Li Zhiqun
..............page:542-548
2.5Gb/s 0.18μm CMOS Clock and Data Recovery Circuit
Liu Yongwang;Wang Zhigong;Li Wei
..............page:537-541
A CMOS LC VCO with 3.2~6.1GHz Tuning Range
Ning Yanqing;Chi Baoyong;Wang Zhihua;Chen Hongyi
..............page:526-529
Single-Stage Wide-Range CMOS VGA with Temperature Compensation and Linear-in-dB Gain Control
Yun Tinghua;Yin Li;Wu Jianhui;Shi Longxing
..............page:518-525
Bandgap Reference Design by Means of Multiple Point Curvature Compensation
Jiang Tao;Yang Huazhong
..............page:490-495
Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor
Wang Cailin;Gao Yong
..............page:484-489
A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications
Li Wenjun;Sun Lingling;Liu Jun
..............page:480-483
Observation of Dislocation Etch Pits in GaN Epilayers by Atomic Force Microscopy and Scanning Electron Microscopy
Gao Zhiyuan;Hao Yue;Zhang Jincheng;Zhang Jinfeng;Chen Haifeng;Ni Jinyu
..............page:473-479
AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
Yao Xiaojiang;Li Bin;Chen Yanhu;Chen Xiaojuan;Wei Ke;Li Chengzhan;Luo Weijun;Wang Xiaoliang;Liu Dan;Liu Guoguo;Liu Xinyu
..............page:514-517
Effect of Inertial Shock on RF MEMS Capacitive Switches Property in Low Vacuum
Dong Linxi;Sun Lingling;Xu Xiaoliang
..............page:507-513
A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications
Xue Chunlai;Shi Wenhua;Yao Fei;Cheng Buwen;Wang Hongjie;Yu Jinzhong;Wang Qiming
..............page:496-499