Chinese Journal of Semiconductors 2006 Issue 2 Quantum Measurement of Single Electron State by a Mesoscopic Detector

Quantum Measurement of Single Electron State by a Mesoscopic Detector
Hu Xuening;Luo Junyan;Li Xinqi

..............page:218-222

Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction
Xu Wen

..............page:204-217

InAs Wires on InP (001)
Wu Ju;Wang Zhanguo

..............page:197-203

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy
Jiang Yulong;Ru Guoping;Qu Xinping;Li Bingzong

..............page:223-228

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy
Ou Guping;Song Zhen;Gui Wenming;Zhang Fujia

..............page:229-234

Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs
Gao Jinxia;Zhang Yimen;Zhang Yuming

..............page:283-289

Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods
Zhao Yi;Wan Xinggong;Xu Xiangming;Cao Gang;Bu Jiao

..............page:290-293

Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages
Jia Yunpeng;Zhang Bin;Sun Yuechen;Kang Baowei

..............page:294-297

Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT
Xue Lijun;Xia Yang;Liu Ming;Wang Yan;Shao Xue;Lu Jing;Ma Jie;Xie Changqing;Yu Zhiping

..............page:298-303

Monte Carlo Simulation of Impurity Scattering Effect in Resonant Phonon-Assisted Terahertz Quantum-Cascade Lasers
Cao Juncheng;Lü Jingtao

..............page:304-308

Fabrication and Numerical Simulation of a Micromachined Contact Cantilever RF-MEMS Switch
Sun Jianhai;Cui Dafu;Xiao Jiang

..............page:309-312

A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Technique
Liu Yu;Wang Guoyu

..............page:313-317

A Low Power SRAM/SOI Memory Cell Design
Yu Yang;Zhao Qian;Shao Zhibiao

..............page:318-322

Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS
Chen Hongda;Gao Peng;Mao Luhong;Huang Jiale

..............page:323-327

Tapered Multimode Interference Combiners for Coherent Receivers
Wu Zhigang;Zhang Weigang;Wang Zhi;Kai Guiyun;Yuan Shuzhong;Dong Xiaoyi;Utaka Katsuyuki;Wada Yasuo

..............page:328-335

Growth of ZnO Single Crystal by Chemical Vapor Transport Method
Zhao Youwen;Dong Zhiyuan;Wei Xuecheng;Duan Manlong;Li Jinmin

..............page:336-339

Characteristics of Annealing of InN Films
Xie Zili;Zhang Rong;Xiu Xiangqian;Bi Zhaoxia;Liu Bin;Pu Lin;Chen Dunjun;Han Ping;Gu Shulin;Jiang Ruoliang;Zhu Shunming;Zhao Hong;Shi Yi;Zheng Youdou

..............page:340-344

Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films
Guo Hengqun;Lin Shangxin;Wang Qiming

..............page:345-349

Study of Thermal Characteristics of Semiconductor Light-Emitting Devices
Zhang Yuezong;Feng Shiwei;Xie Xuesong;Li Ying;Yang Ji;Sun Jingying;Lü Changzhi

..............page:350-353

An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference
Yu Zongguang;Liu Zhan;Wang Guozhang;Xu Ziming

..............page:354-357

Research on CMOS Compatible Integrated Humidity Sensors
Peng Shaohua;Huang Qing'an;Qin Ming;Zhang Zhongping

..............page:358-362

Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots
Du Jun;Wang Qingpu;Balocco C;Song A M

..............page:363-367

A Novel Triplexer Design Based on Arrayed Waveguide Grating
Lang Tingting;He Jianjun;He Sailing

..............page:368-372

Electronic Structure of Semiconductor Nanocrystals
Li Jingbo;Wang Linwang;Wei Suhuai

..............page:191-196

Characterization and Modeling for 0.13μm RF MOSFETs
Chi Yusong;Huang Fengyi;Wu Zhongjie;Zhang Shaoyong;Kong Xiaoning;Wang Zhigong

..............page:373-376

Information for authors

..............page:379-380

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Alx Ga1- x N/GaN Heterostructures
Tang Ning;Shen Bo;Wang Maojun;Yang Zhijian;Xu Ke;Zhang Guoyi;Gui Yongsheng;Zhu Bo;Gu Shaoling;Chu Junhao

..............page:235-238

Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure
Fu Zhuxi;Sun Xiankai;Zhu Junjie;Lin Bixia

..............page:239-244

Decarbonization and Decolorization of Large Sapphire Crystals Grown by the Temperature Gradient Technique
Xu Jun;Zhou Guoqing;Deng Peizhen;Si Jiliang;Qian Xiaobo;Wang Yinzhen;Zhou Shengming;Zhou Yongzong;Zhu Renyuan

..............page:245-248

Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode
Zhou Xin;Gu Shulin;Zhu Shunming;Ye Jiandong;Liu Wei;Liu Songmin;Hu Liqun;Zheng Youdou;Zhang Rong;Shi Yi

..............page:249-253

Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure
Chen Zhiming;Ren Ping;Pu Hongbin

..............page:254-257

Fine-Grain Sleep Transistor Insertion for Leakage Reduction
Yang Huazhong;Wang Yu;Lin Hai;Luo Rong;Wang Hui

..............page:258-265

S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate
Cai Shujun;Pan Hongshu;Chen Hao;Li Liang;Zhao Zhenping

..............page:266-269

High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers
Ma Zhenqiang;Wang Guogong;Jiang Ningyue;Ponchak G E;Alterovitz S A

..............page:270-275

Numerical Explanation of Slow Transients in an AlGaN/GaN HEMT
Zhang Jinfeng;Hao Yue

..............page:276-282