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Chinese Journal of Semiconductors
0253-4177
2000 Issue 7
InGaN/GaN Single Quantum Well Structures Green Light-Emitting Diodes
WANG Xiao-hui;LIU Xiang-lin;LU Da-cheng;YUAN Hai-rong;HAN Pei-de;WANG Du
..............page:726-728
High Quality GaN Grown by GSMBE
SUN Dian-zhao;WANG Xiao-liang;WANG Jun-xi;LIU Hong-xin;LIU Cheng-hai;ZENG Yi-ping;LI Jin-min;HOU Xun;LIN Lan-ying
..............page:723-725
Optimal Partitioning Algorithm of Opto-Electronic Multi-Chip Module Based on Minimum Power Consumption
CHEN Wei-yuan;Hu Qin;ZHOU Zheng-wei;WANG Hao-cai
..............page:717-722
Comprehensive Delay Model for CMOS Inverters Based on Velocity Saturation
SONG Ren-ru;RUAN Gang;LIANG Qing-qing;Reinhard Streiter;Thomas Otto;Thomas Gessner
..............page:711-716
Novel Backflow Structure Hardening Metallization System in Microwave Power Device
SUN Ying-hua;LI Zhi-guo;CHENG Yao-hai;ZHANG Wan-rong
..............page:705-710
Arsenic-Doped Poly-Silicon Emitter RCA Transistor
ZHANG Li-chun;YE Hong-fei;JIN Xue-lin;GAO Yu-zhi;NING Bao-jun
..............page:697-704
Interdiffusion of Si and Ge Atoms During Epitaxy Growth of Ge Layer on Si (100) Studied by Raman Spectroscopy
JIANG Wei-rong;ZHOU Xing-fei;SHI Bin;HU Dong-zhi;LIU Xiao-han;JIANG Zui-min;ZHANG Xiang-jiu
..............page:662-666
Influence of Growth Rate and Substrate Temperature on Self-Organized InxGa1-xAs/GaAs Quantum Dots Grown by MBE
YU Lei;ZENG Yi-ping;PAN Liang;KONG Mei-ying;LI Jin-min;LI Ling-xiao;ZHOU Hong-wei
..............page:652-656
Miscibility Calculation of InGaN Alloy
TONG Yu-zhen;CHEN Ying-yong;ZHANG Guo-yi
..............page:646-651
Novel Type of Wide-Bandwidth GaAs/AIGaAs Infrared Photodetectors
SHI Yan-li;DENG Jun;YIN Jie;LIAN Peng;DONG Xin;DU Jin-yu;GUO Guo;ZOU De-shu;CHEN Jian-xin;SHEN Guang-di
..............page:630-636
Monolithic Integration DFB Laser Array by Angling Active Stripe and Using Thin-Film Stripe Heater
ZHANG Jing-yuan;LIU Guo-li;ZHU Hong-liang;WANG Xiao-jie;ZHOU Fan;WANG Wei
..............page:625-629
Analysis of Electrical Characteristics in 6H-SiC Junctions Irradiated by Neutron
SHANG Ye-chun;ZHANG Yi-men;ZHANG Yu-ming
..............page:691-696
4H-SiC n+pp+ Structure Passivated with SIPOS-SiO2 Compound Layer
JIANG Yan-feng;LI Si-yuan;LIU Su;CAO Lei;BO Jian-jun
..............page:686-690
Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System
LUO Guang-li;LIN Xiao-feng;LIU Zhi-nong;CHEN Pei-yi;LIN Hui-wang;Tsien Pei Hsin;LIU An-sheng
..............page:682-685
Room-Temperature Photoluminescence of Thermally Oxidized Si1-x-yGexCy Thin Films on Si (100) Substrates
CHENG Xue-mei;ZHENG You-dou;LIU Xia-bing;ZANG Lan;ZHU Shun-ming;HAN Ping;LUO Zhi-yun;JIANG Ruo-lian
..............page:677-681
Nanocrystalline SiC Films Grown Si by HFCVD Method and Its Photoluminescence
YU Ming-bin;MA Jian-ping;LUO Jia-jun;CHEN Zhi-ming
..............page:673-676
Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2
WANG Yan-bing;SUN Yong-ke;QIAO Yong-ping;ZHANG Bo-rui;QIN Guo-gang;CHEN Wen-tai;GONG Yi-yuan;WU De-xin;MA Zhen-chang;ZONG Wan-hua
..............page:667-672