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Chinese Journal of Semiconductors
0253-4177
2000 Issue 5
Luminescence from Silicon Nitride Film by LPCVD
liu yu zhen ; shi wan quan ; han yi qin ; liu shi xiang ; zhao ling li ; sun bao yin ; ye tian chun ; chen meng zhen
..............page:517-520
A Novel Method for Determining theEtch Rate Distributions of Si
yang heng ; bao min hang ; shen shao qun ; li zuo xin ; zhang da cheng ; wu guo ying
..............page:504-508
Boundary Element Method for Extraction Substrate Coupling Parameter in Mixed-Signal ICs
wu zhi ; huang jun zuo ; tang zuo shan
..............page:496-503
Design of Constant Divider and Its BIST Implement
ding bao yan ; zhang zuo zuo
..............page:491-495
Mode Theory and Analysis of Planar Array Optical Waveguides
lei hong bing ; ou hai yan ; yang qin qing ; hu xiong wei ; yu jin zhong ; wang qi ming
..............page:486-490
Silicon-Based Bragg Reflector for Resonant Cavity Photodetector
li cheng ; yang qin qing ; zhu jia lian ; wang hong jie ; cheng bu wen ; yu jin zhong ; wang qi ming ; wang lu feng ; peng zuo
..............page:483-485
Normal-Incident Si0.7Ge0.3/Si Multiple Quantum Wells Photodetectors
li cheng ; yang qin qing ; zhu hong jie ; luo li ping ; cheng bu wen ; yu jin zhong ; wang qi ming
..............page:480-482
Characterization of Schottky Barrier Contact Between Ultra Thin Epitaxial CoSi2/n-Si
qu xin ping ; ru guo ping ; xu zuo lei ; li bing zong
..............page:473-479
Effect of Doping Concentration on Hot Carrier Reliability of Small-Sized nMOSFETs
zhang jiong ; li rui wei
..............page:469-472
Characteristics of Random Telegraph Signals in NMOSFETs with Ultra Narrow Channels
bo hui ming ; shi yi ; gu shu lin ; yuan xiao li ; wu jun ; han ping ; zhang rong ; zheng you
..............page:465-468
Radiation Characteristics of Cobalt SALICIDE CMOS/SOI Devices
zhang xing ; huang ru ; wang yang yuan
..............page:460-464
Low Noise Microwave SiGe HBTs
qian wei ; zhang jin shu ; jia hong yong ; lin hui wang ; qian pei xin
..............page:445-450
Performance Comparison of GaAs/AlGaAs Quantum Well Infrared Photodetectors Grown by MOCVD and MBE
li na ; li ning ; lu wei ; zuo hong fei ; chen zhang hai ; liu xing quan ; shen xue chu ;h.h.tan;lan fu;c.jagadish;m.b.johnston;m.gal
..............page:441-444
Rutherford Backscattering and Channeling,Double Crystal X-ray Diffraction and Photoluminescence of GaN
yao dong min ; xin yong ; wang li ; li shu ti ; xiong chuan bing ; peng xue xin ; liu nian hua ; jiang feng yi
..............page:437-440
Unified MOSFET Short Channel Factor Using Variational Method
chen wen song ; tian li lin ; li zhi jian
..............page:431-436
Epitaxial Growth of 150mm Silicon Epi-Wafers for Advanced IC Applications
wang qi yuan ; cai tian hai ; yu yuan huan ; lin lan ying
..............page:426-430
Transit Properties of High Power Ultra-Fast Photoconductive Semiconductor Switch
shi wei ; zhao wei ; sun xiao wei ;lam yee loy
..............page:421-425
High Efficiency Al-Free 980nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers
xu zun tu ; yang guo wen ; zhang jing ming ; ma zuo yu ; xu jun ying ; shen guang di ; chen liang hui
..............page:417-420